Semiconductor device
It is an object to provide a semiconductor device having an improved heat dissipation characteristic. A power element is mounted on and jointed and to a metal block through a jointing material. An insulating substrate includes a ceramic substrate and metal layers formed on both surfaces of the ceramic substrate and having thicknesses equal to each other. The metal block and the insulating substrate are provided per insulation unit of the power element. The metal layer of the insulating substrate is joined to a surface of the metal block through a jointing material opposite to a surface thereof for forming the power element. An electrode terminal is attached to a surface of the metal block having a power element joined thereto through ultrasonic junction and the like. Electrode terminals are connected to electrodes of the power element through aluminum wires. The power element, the electrode terminals and the metal block are sealed with a resin package while the metal layer of the insulating substrate remains exposed. An external heat dissipator is attached to the exposed metal layer of the insulating substrate.
1. A semiconductor device comprising:
a metal block having a first surface and a second surface opposite to said first surface;
a semiconductor element joined to said first surface of said metal block through a jointing material;
a resin insulating layer having a third surface and a fourth surface opposite to said third surface, said third surface being joined to said second surface of said metal block; and
a resin package for sealing said metal block and said semiconductor element, wherein said fourth surface of said resin insulating layer is exposed, and said resin insulating layer has an elasticity higher than that of said resin package.
2. The semiconductor device according to claim 1 , wherein said resin insulating layer is made of a silicon resin including a ceramic material for filling said silicon resin.
3. The semiconductor device according to claim 1 , wherein said metal block is provided per insulation unit of said semiconductor element.
4. The semiconductor device according to claim 1 , wherein said metal block includes a surface having a region larger than a surface of said jointing material on a side opposite to said jointing material, said surface of said jointing material lying on a side opposite to said semiconductor element.
5. The semiconductor device according to claim 1 , wherein
a gap between said metal block and said semiconductor element becomes wider as a distance from a center of said semiconductor element becomes longer; and
said gap is filled with said jointing material.