Method and apparatus for inspecting an EUV mask blank
View Patent ↗An apparatus and method for at-wavelength EUV mask-blank characterization for inspection of moderate and low spatial frequency coating uniformity using a synchrotron or other source of EUV light. The apparatus provides for rapid, non-destruction, non-contact, at-wavelength qualification of large mask areas, and can be self-calibrating or be calibrated to well-characterized reference samples. It can further check for spatial variation of mask reflectivity or for global differences among masks. The apparatus and method is particularly suited for inspection of coating uniformity and quality and can detect defects in the order of 50 μm and above.
1. An apparatus for inspecting a reflective EUV mask blank for defects, comprising:
an EUV light source; and
a CCD camera array configured for simultaneously imaging multiple points in an area of a mask blank in response to reflections of light from said EUV light source impinging on said mask blank.
2. An apparatus for inspecting a reflective EUV mask blank for defects, comprising:
an EUV light source; and
a micro-channel plate detector configured for simultaneously imaging multiple points in an area of a mask blank in response to reflections of light from said EUV light source impinging on said mask blank.
3. An apparatus as recited in claim 1 or 2 , wherein said EUV light source comprises a synchrotron.
4. An apparatus as recited in claim 1 or 2 , further comprising a pinhole filter positioned between said EUV light source and said mask blank.
5. An apparatus for inspecting a reflective EUV mask blank for defects, comprising:
means for directing EUV light to a mask blank; and
a CCD camera array configured for simultaneously imaging multiple points of an area of a mask blank in response to reflections of EUV light impinging on said mask blank.
6. An apparatus for inspecting a reflective EUV mask blank for defects, comprising:
means for directing EUV light to a mask blank; and
a micro-channel plate detector configured for simultaneously imaging multiple points of an area of a mask blank in response to reflections of EUV light impinging on said mask blank.
7. An apparatus as recited in claim 5 or 6 , wherein said means for directing EUV light comprises a synchrotron.
8. An apparatus as recited in claim 5 or 6 , further comprising a pinhole filter positioned between said means for directing EUV light and said mask blank.
9. An apparatus for inspecting a reflective EUV mask blank for defects, comprising:
an EUV light source configured to direct a beam of light toward a mask blank; and
an EUV detector configured to simultaneously image multiple points of an area of said mask blank in response to light from said EUV light source reflected from said area of said mask blank to be imaged;
wherein said EUV detector is selected from the group of detectors consisting of a CCD camera array and a micro-channel plate detector.
10. An apparatus as recited in claim 9 , wherein said EUV light source comprises a synchrotron.
11. An apparatus as recited in claim 9 , further comprising a pinhole filter positioned between said EUV light source and said mask blank.
12. An apparatus for inspecting a reflective EUV mask blank for defects, comprising an EUV light source positioned to direct a beam of light to a mask blank, and an EUV detector positioned to simultaneously record the reflection from a multiple points of an area of the mask blank in a single exposure to said EUV light source, wherein said EUV detector is selected from the group of detectors consisting of a CCD camera array and a micro-channel plate detector.
13. An apparatus as recited in claim 12 , wherein said EUV light source comprises a synchrotron.
14. An apparatus as recited in claim 12 , further comprising a pinhole filter positioned between said EUV light source and said mask blank.
15. A method for inspecting a reflective EUV mask blank for defects, comprising simultaneously imaging multiple points of an area of a mask blank with an EUV detector in response to reflections of light from an EUV light source impinging on said mask blank, wherein said EUV detector is selected from the group of detectors consisting of a CCD camera array and a micro-channel plate detector.
16. A method as recited in claim 15 , wherein said EUV light source comprises a synchrotron.
17. A method as recited in claim 15 , further comprising filtering said EUV light source with a pinhole filter.
18. A method for inspecting a reflective EUV mask blank for defects, comprising:
directing a beam of light from an EUV light source toward a mask blank; and
simultaneously imaging multiple points of an area of said mask blank with an EUV detector in response to light from said EUV light source reflected from said area of said mask blank to be imaged;
wherein said EUV detector is selected from the group of detectors consisting of a CCD camera array and a micro-channel plate detector.
19. A method as recited in claim 17 , wherein said EUV light source comprises a synchrotron.
20. A method as recited in claim 18 , further comprising filtering said EUV light source with a pinhole filter.
21. A method for inspecting a reflective EUV mask blank for defects, comprising:
positioning an EUV light source to direct a beam of light to a mask blank;
positioning an EUV detector to simultaneously record the reflection from multiple points of an area of the mask blank in a single exposure to said EUV light source; and
analyzing said recorded reflection to determine the presence of a defect in said mask blank;
wherein said EUV detector is selected from the group of detectors consisting of a CCD camera array and a micro-channel plate detector.
22. A method as recited in claim 21 , wherein said EUV light source comprises a synchrotron.
23. A method as recited in claim 21 , further comprising filtering said EUV light source with a pinhole filter.