Optical semiconductor device comprising a multiple quantum well structure
View Patent ↗An optical semiconductor device with a multiple quantum well structure, is set out in which well layers and barrier layers, comprising various types of semiconductor layers, are alternately layered. The device well layers comprise a first composition based on a nitride semiconductor material with a first electron energy. The barrier layers comprise a second composition of a nitride semiconductor material with electron energy which is higher in comparison to the first electron energy. The well and barrier layers are in the direction of growth, by a radiation-active quatum well layer which with the essentially non-radiating well layers ( 6 a ) and the barrier layers ( 6 b ), arranged in front, form a supperlattice.
1. An optical semiconductor device with a multiple quantum well structure, comprising:
at least one combination of alternating well layers and barrier layers, both comprising various semiconductor layers, said well layers comprising a first composition based on a nitride semiconductor material with a first electron energy, said barrier layers comprising a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy, and a radiation-active quantum well layer for which the well layers and barrier layers form a superlattice, the well layers of the first composition are essentially non-radiating well layers below the radiation-active quantum well layer.
2. The optical semiconductor device according to claim 1 , wherein the well layers comprise thin aluminum-indium-gallium-nitride layers and the barrier layers comprise gallium-nitride or aluminum-gallium-nitride layers which are thicker than the well layers and the radiation-active quantum well comprises an indium-gallium-nitride layer.
3. The optical semiconductor device according to claim 2 , wherein the well layers and barrier layers are doped with silicon.
4. The optical semiconductor device according to claim 3 , wherein the dopant concentration is from 10 17 to 10 18 cm 3 .
5. The optical semiconductor device according to claim 2 , wherein the radiation-active quantum well follows an uppermost barrier layer.
6. The optical semiconductor device according to claim 2 , wherein layer thickness of the radiation-active quantum well is greater than layer thickness of the well layers of the superlattice.
7. The optical semiconductor device according to claim 2 , wherein the well layers are thinner than 2 nm and the barrier layers are at least 3 nm thick.
8. The optical semiconductor device according to claim 1 , wherein the radiation-active quantum well follows an uppermost barrier layer.
9. The optical semiconductor device according to claim 8 , wherein the well layers and barrier layers are doped with silicon.
10. The optical semiconductor device according to claim 1 , wherein layer thickness of the radiation-active quantum well is greater than layer thickness of the well layers of the superlattice.
11. The optical semiconductor device according to claim 1 , wherein the well layers are thinner than 2 nm and the barrier layers are at least 3 nm thick.
12. An optical semiconductor device with a multiple quantum well structure, comprising:
at least one combination of alternating well layers and barrier layers, both comprising various semiconductor layers, said well layers comprising a first composition based on a nitride semiconductor material with a first electron energy, said barrier layers comprising a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy, and a radiation-active quantum well layer for which the well layers and barrier layers form a superlattice wherein within at least one well layer of the superlattice, the In content increases in a direction of growth.
13. The optical semiconductor device according to claim 12 , wherein in the well layer the indium content, remote from the quantum well layer, lies below 5%.
14. An optical semiconductor device with a multiple quantum well structure, comprising:
at least one combination of alternating well layers and barrier layers, both comprising various semiconductor layers, said well layers comprising a first composition based on a nitride semiconductor material with a first electron energy, said barrier layers comprising a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy, and a radiation-active quantum well layer for which the well layers and barrier layers form a superlattice, wherein at least one of the well layers of the superlattice has at least one pair of single layers of which a first of the at least one pair, in a direction of growth, has a lower indium content than a second of the at least one pair in a direction of growth.
15. The optical semiconductor device according to claim 14 , wherein the second of the at least one pair has an increased indium content of less than 5% of the first of the at least one pair.
16. The optical semiconductor device according to claim 15 wherein the well layer comprises a plurality of single layers whose indium content increases from a first of the plurality of single layers lying furthest away from the quantum well layer to a single layer lying closest to the radiation-active quantum well layer.
17. The optical semiconductor device according to claim 15 , wherein the indium content of the first of the pair of single layers is less than 5%.
18. The optical semiconductor device according to claim 15 , wherein a thickness of each of the plurality of single layers comprises at least one monolayer.
19. The optical semiconductor device according to claim 14 wherein the well layer comprises a plurality of single layers whose indium content increases from a first of the plurality of single layers lying furthest away from the quantum well layer to a single layer lying closest to the radiation-active quantum well layer.
20. The optical semiconductor device according to claim 19 , wherein the indium content increase is smaller than 5%.
21. The optical semiconductor device according to claim 14 , wherein the indium content of the first of the at least one pair of single layers is less than 5%.
22. The optical semiconductor device according to claim 14 , wherein a thickness of each of the plurality of single layers comprises at least one monolayer.
23. The optical semiconductor device according to claim 14 , wherein a thickness of each of the plurality of single layers is approximately one monolayer.
24. An optical semiconductor device with a multiple quantum well structure, comprising: at least one combination of alternative well layers and barrier layers, both comprising various semiconductor layers, said well layers comprising a first composition based on a nitride semiconductor material with a first electron energy, said barrier layers comprising a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy, and a radiation-active quantum well layer for which the well layers and barrier layers form a superlattice, wherein the well layers comprise thin aluminum-indium-gallium-nitride layers and the barrier layers comprise gallium-nitride or aluminium-gallium-nitride layers which are thicker than the well layers and the radiation-active quantum well comprises an indium-gallium-nitride layer, wherein within a, least one well layer of the superlattice, the In content increases in a direction of growth.
25. An optical semiconductor device with a multiple quantum well structure, comprising:
at least one combination of alternating well layers and barrier layers, both comprising various semiconductor layers, said well layers comprising a first composition based on a nitride semiconductor material with a first electron energy, said barrier layers comprising a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy, and a radiation-active quantum well layer for which the well layers and barrier layers form a superlattice, wherein the well layers comprise thin aluminum-indium-gallium-nitride layers and the barrier layers comprise gallium-nitride or aluminum-gallium-nitride layers which are thicker than the well layers and the radiation-active quantum well comprises an indium-gallium-nitride layer, wherein at least one of the well layers of the super-lattice has at least one pair of single layers of which a first of the pair, in a direction of growth, has a lower indium content than a second of the pair in a direction of growth.