Patent Assignment
Reel/Frame 051381/0694
Assignment of Assignor's Interest
Recorded: 2019-12-19
Pages: 10
Assignor
OSRAM GMBH
Executed: 2019-12-18
Assignee
OSRAM OPTO SEMICONDUCTORS GMBH
LEIBNIZSTRASSE 4, REGENSBURG, 93055, GERMANY
Covered Properties
(134)
Semiconductor Chip and Method for the Production Thereof
Patent:
6,538,302 →
Application:
09/623,622 →
Phosphor for Light Sources, and Associated Light Source
Patent:
6,552,487 →
Application:
09/694,635 →
Light-Emitting Diode
Luminescent Array, Wavelength-Converting Sealing Material and Light Source
Patent:
7,132,786 →
Application:
09/786,086 →
Luminous Substance for a Light Source and Light Source Associates Therewith
Patent:
6,669,866 →
Application:
09/787,208 →
Optically Pumped, Surface-Emitting Semiconductor Laser Device and Method for the Manufacture Thereof
Optical Semiconductor Device Comprising a Multiple Quantum Well Structure
Patent:
6,849,881 →
Application:
09/913,394 →
Highly Efficient Fluorescent Material
Light-Emitting Diode with a Structured Surface
Patent:
6,649,939 →
Application:
10/070,584 →
Method for Measuring Product Parameters of Components Formed on a Wafer and Device for Performing the Method
Surface Structured Light-Emitting Diode with Improved Current Coupling
Patent:
7,135,709 →
Application:
10/089,017 →
Led White Light Source with Broadband Excitation
Illumination Unit Having at Least One Led as Light Source
Semiconductor Component for the Emission of Electromagnetic Radiation and Method for Production Thereof
Illumination Unit Having at Least One Led as Light Source
Radiation-Emitting Semiconductor Element and Method for Producing the Same
Light-Emitting Diode Chip and a Method for Producing Same
Optoelectronic Component and Method for the Production Thereof
Light-Emitting-Diode Chip Comprising a Sequence of Gan-Based Epitaxial Layers Which Emit Radiation and a Method for Producing the Same
Method for Fabricating Semiconductor Layers
Light-Emitting Semiconductor Component
Ingan-Based Light-Emitting Diode Chip and a Method for the Production Thereof
Luminescent Diode
Surface-Emitting Laser Having Lateral Current Injection
Radiation-Emitting Semiconductor Chip and Light-Emitting Diode
Semiconductor Chip for Optoelectronics and Method for Production Thereof
Semicoductor Chip and Method for Production Thereof
Radiation-Emitting Semiconductor Chip with a Radiation-Emitting Active Layer
Semiconductor Chip for Optoelectronics
Radiation Emitting Semiconductor Component Having a Nitride Compound Semiconductor Body and a Contact Metallization Layer on Its Surface
Method for Fabricating a Radiation-Emitting Semiconductor Chip Based on Iii-V Nitride Semiconductor, and Radiation-Emitting Semiconductor Chip
Opto-Electronic Semiconductor Component
Method for Defining the Color Group of an Led and Led Module
Patent:
6,900,471 →
Application:
10/412,888 →
Led Module
Radiation-Emitting Chip
Method for Fabricating a Semiconductor Component Based on Gan
Stacked Semiconductor Laser Diode
Radiation-Emitting Semiconductor Component Based on Gallium Nitride, and Method for Fabricating the Semiconductor Component
Light-Emitting Semiconductor Component
Semiconductor Laser with Lateral Current Conduction and Method for Fabricating the Semiconductor Laser
Method for Subdividing Wafers into Chips
Radiation-Emitting Chip and Radiation-Emitting Component
Conductor Frame and Housing for a Radiation-Emitting Component, Radiation-Emitting Component and Display and/or Illumination System Using Radiation-Emitting Components
Nitride-Based Semiconductor Component Such Asa Light-Emitting Diode or a Laser Diode
Optoelectronic Component
Luminescent Material and Light Emitting Diode Using the Same
Luminescent Material, Especially for Led Application
Optoelectronic Component
Optically Pumped Semiconductor Laser Device
Method for Attaching a Semiconductor Chip in a Plastic Encapsulant, Optoelectronic Semiconductor Component and Method for the Production Thereof
Gan-Based Radiation-Emitting Thin-Layered Semiconductor Component
Phosphor and Light Source Comprising Such a Phosphor
Leadframe - Based Housing, Leadframe Strip, Surface - Mounted Optoelectronic -Component, and Production Method
Radiation-Emitting Semiconductor Component
Method of Forming Light Emitting Devices Including Forming Mesas and Singulating
Optoelectronic Component
Coated Fluorescent Substance, Light Emitting Device Comprising Said Substance and a Method for Producing Said Substance
Lighting Module and Method for the Production Thereof
Headlight and Headlight Element
Radiation-Emitting Semi-Conductor Component
Method for the Production of a Plurality of Opto-Electronic Semiconductor Chips and Opto-Electronic Semiconductor Chip
Radiation Emitting Semi-Conductor Element
Green-Emitting Led
Radiation Detector with Controlled Spectral Sensitivity Distribution
High-Efficiency Led-Based Illumination System with Improved Color Rendering
Optoelectronic Component and Method for Producing It
Surface Emitting Semiconductor Laser Chip and Method for Producing the Chip
Radiation-Emitting Semiconductor Component
Radiation-Emitting Semiconductor Element
Leadframe and Housing for Radiation-Emitting Component, Radiation-Emitting Component, and a Method for Producing the Component
Phosphor for Light Sources and Associated Light Source
Method for Producing a Light-Emitting Semiconductor Component
Opto-Electronic Component with Radiation-Transmissive Electrical Contact Layer
Codable Electronic Circuit Arrangement and Method for Producing It
Method for Fabricating a Component Having an Electrical Contact Region, and Component Having an Electrical Contact Region
Light-Emitting Diode Carrier
Electrical Contact for Optoelectronic Semiconductor Chip and Method for Its Production
Optoelectronic Device with Patterned-Metallized Package Body, Method for Producing Such a Device and Method for the Patterned Metallization of a Plastic-Containing Body
Method for Fabricating at Least One Mesa or Ridge Structure or at Least One Electrically Pumped Region in a Layer or Layer Sequence
Light Source
Arrangement of Luminescent Materials, Wavelength-Converting Casting Compound and Light Source
Radiation-Emitting Semiconductor Chip and Method for Producing Such a Semiconductor Chip
Radiation-Sensitive Semiconductor Body Having an Integrated Filter Layer
Semiconductor Laser with Reduced Heat Loss
Radiation-Emitting-And-Receiving Semiconductor Chip and Method for Producing Such a Semiconductor Chip
Method for Manufacture of an Epitaxial Structural Element Layer Sequence and Optoelectronic Semiconductor Chip
Optoelectronic Component and Method for Producing It
Optical Semiconductor Device with Multiple Quantum Well Structure
Method for Fabricating a Radiation-Emitting Semiconductor Chip Based on Ill-V Nitride Semiconductor
Phosphor for Light Sources and Associated Light Source
Radiation-Emitting Semiconductor Element and Method for Producing the Same
Optoelectronic Component and Method for Producing It
Semiconductor Component Emitting and/or Receiving Electromagnetic Radiation, and Housing Base for Such a Component
Illumination Device and Control Method
Optically Pumped, Surface-Emitting Semiconductor Laser Device and Method for the Manufacture Thereof
Highly Efficient Stable Oxynitride Phosphor
Semiconductor Chip for Optoelectronics
Arrangement of Luminescent Materials, Wavelength-Converting Casting Compound and Light Source
Blue to Yellow-Orange Emitting Phosphor, and Light Source Having Such a Phosphor
Optical Semiconductor Device with Multiple Quantum Well Structure
Method for Production of a Radiation-Emitting Semiconductor Chip
Method for Producing an Electrical Contact for an Optoelectronic Semiconductor Chip
Semiconductor Component
Light-Emitting-Diode Chip Comprising a Sequence of Gan-Based Epitaxial Layers Which Emit Radiation and a Method for Producing the Same
Method for Fabricating a Component Having an Electrical Contact Region
Method for Producing an Optoelectronic Device with Patterned-Metallized Package Body and Method for the Patterned Metalization of a Plastic-Containing Body
Luminescence Conversion of Led Including Two Phosphors
Method for Manufacture of Optically Pumped, Surface-Emitting Semiconductor Laser Device
Method for Producing a Radiation-Emitting-and-Receiving Semiconductor Chip
Semiconductor Laser with Reduced Heat Loss
Optoelectronic Component
Illuminant and Light Source Containing the Same, and Method for Producing said Illuminant
Configuration of Multiple Led Modules
Light Source
Luminescent Substance of the Class of Nitride Silicates and Light Source Having Such a Luminescent Substance
Method for Producing an Led Light Source Comprising a Luminescence Conversion Element
Red-Emitting Luminophore and Light Source Comprising such a Luminophore
Method for Fabricating a Semiconductor Component Based on Gan
Thermally Stable Oxynitride Phosphor and Light Source Comprising Such a Phosphor
Luminophore and Lighting System Having Such a Luminophore
Optoelectronic Component
Configuration of Multiple Led Module
Method for Production of a Radiation-Emitting Semiconductor Chip
Luminescence Conversion LED
Alpha-Sialon Phosphor
Conversion Led
Light-Emitting-Diode Chip Comprising a Sequence of Gan-Based Epitaxial Layers Which Emit Radiation and a Method for Producing the Same
Optoelectronic Component
Configuration of Multiple Led Module
Carrier Device, Electrical Device Having a Carrier Device and Method for Producing Same
Light Source Comprising a Luminescent Substance and Associated Illumination Unit
Method for Producing an Optoelectronic Semiconductor Component and Optoelectronic Semiconductor Component
Phosphor, Method for Producing a Phosphor and Use of a Phosphor
Composite Material with Photoluminescent Material Embedded in a Transparent Matrix
Related Assignments
(1)
Other recorded transfers of the patents in this record — the chain of ownership.