Optical semiconductor device with multiple quantum well structure
View Patent ↗An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers ( 6 a ) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers ( 6 b ) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer ( 6 c ), for which the essentially non-radiating well layers ( 6 a ) and the barrier layers ( 6 b ) arranged in front form a superlattice.
1. A method for producing an optical semiconductor device comprising:
epitaxially growing at least one combination of alternating well and barrier layers based on a nitride semiconductor material, wherein the indium content of at least one of the well layers is increased during growth of the at least one well layer.
2. The method according to claim 1 , wherein during growth of the at least one well layer at least one pair of single layers, having a first single layer and a second single layer, is grown and wherein the first single layer is grown before the second single layer and has a lower indium content than the second single layer.
3. The method according to claim 2 , wherein the indium content of the first single layer of the at least one pair of single layers is less than 5%.
4. The method according to claim 2 , wherein the second single layer of the at least one pair of single layers has an increased indium content of less than 5% with respect to the indium content of the first single layer of the at least one pair of single layers.
5. A method for producing an optical semiconductor device comprising:
epitaxially growing at least one combination of alternating well and barrier layers based on a nitride semiconductor material, wherein the indium content of at least one of the well layers is increased during the growth of the at least one well layer, wherein during growth of the at least one well layer a plurality of single layers is grown and wherein the indium content of each single layer is increased with respect to the indium content of an earlier grown single layer.
6. The method according to claim 5 , wherein the indium content of each single layer is increased by an amount which is smaller than 5% with respect to the indium content of the earlier grown layer.
7. The method according to claim 5 , wherein the thickness of each of the plurality of single layers comprises at least one monolayer.
8. The method according to claim 5 , wherein the thickness of each of the plurality of layers is smaller than 2 nm.
9. The method according to claim 1 , wherein the well layers are essentially non-radiating well layers.
10. The method according to claim 1 , wherein a radiation-active quantum well layer is disposed over the well layers and barrier layers.
11. The method according to claim 1 , wherein the at least one combination of alternating well and barrier layers is grown by vapor-phase epitaxy or molecular beam epitaxy.
12. The method according to claim 1 , wherein the growth temperature is about 700° C.
13. The method according to claim 1 , wherein the growth velocity is between 1 nm and 10 nm per minute.
14. The method according to claim 1 , wherein the growth velocity is between 1 nm and 2 nm per minute.
15. A method for producing an optical semiconductor device comprising:
epitaxially growing at least one combination of alternating well and barrier layers based on a nitride semiconductor material, wherein the epitaxially growing of at least one of the well layers comprises increasing the indium content along the growth direction within at least one of the well layers while growing that well layer.
16. A method for producing an optical semiconductor device comprising:
epitaxially growing at least one combination of alternating well and barrier layers based on a nitride semiconductor material, wherein the well layers are configured as essentially non-radiating layers and the indium content of at least one of the well layers is increased during growth of the at least one well layer.
17. The method according to claim 16 , further comprising:
epitaxially growing a light-emitting layer next to one of the barrier layers of the at least one combination of alternating well and barrier layers.