Stacked semiconductor laser diode
View Patent ↗The present invention relates to an arrangement of semiconductor diode lasers stacked on top of one another, which is arranged on a substrate ( 1 ). A first diode laser ( 12 ) is arranged on the substrate ( 1 ), and a second diode laser ( 13 ) is arranged on the first diode laser ( 12 ). Between the first diode laser ( 12 ) and the second diode laser ( 13 ) there is a contact layer ( 6 ). The contact layer ( 6 ) comprises a first conductive layer ( 18 ) of a first conduction type and a second conductive layer ( 20 ) of a second conduction type and an interlayer ( 19 ) which is arranged between the first and second conductive layers ( 18, 20 ).
1. An arrangement of semiconductor diode lasers stacked on top of one another, comprising:
a substrate on which a first diode laser is arranged;
a second diode laser which is arranged on the first diode laser;
a contact layer which is arranged between the first diode laser and the second diode laser;
wherein the contact layer comprises a first conductive layer of a first conduction type, a second conductive layer of a second conduction type and an interlayer which is arranged between the first and second conductive layers for increasing a tunneling probability for charge carriers, and wherein the-interlayer is undoped.
2. An arrangement of semiconductor diode lasers stacked on top of one another, comprising:
a substrate on which a first diode laser is arranged;
a second diode laser which is arranged on the first diode laser;
a contact layer which is arranged between the first diode laser and the second diode laser;
wherein the contact layer comprises a first conductive layer of a first conduction type, a second conductive layer of a second conduction type and an interlayer which is arranged between the first and second conductive layers for increasing a tunneling probability for charge carriers, and wherein the interlayer is doped with the first or second conduction type but has a lower dopant concentration than the first conductive layer or the second conductive layer.
3. An arrangement of semiconductor diode lasers stacked on top of one another, having:
a substrate on which a first diode laser is arranged;
a second diode laser which is arranged on the first diode laser; and
a contact layer which is arranged between the first diode laser and the second diode laser;
wherein the contact layer comprises a first conductive layer of a first conduction type, a second conductive layer of a second conduction type, a first interlayer and a second interlayer, the first and second interlayers being arranged between the first and second conductive layers, and the first interlayer facing the first conductive layer and the second interlayer facing the second conductive layer.
4. The arrangement according to claim 3 , wherein the first interlayer has the same conduction type as the first conductive layer but a higher dopant concentration, and the second interlayer has the same conduction type as the second conductive layer but a higher dopant concentration.
5. The arrangement according to claim 3 , wherein the first or the second interlayer has a thickness ranging between a monolayer and 30 nm.
6. The arrangement according to claim 3 , wherein the first or second interlayer has a thickness of between 4 and 12 nm.
7. An arrangement of semiconductor diode lasers stacked on top of one another, having:
a substrate on which a first diode laser is arranged;
a second diode laser which is arranged on the first diode laser; and
a contact layer which is arranged between the first diode laser and the second diode laser;
wherein the contact layer is formed such that a lattice mismatch between the substrate and the first diode laser can be compensated for by a lattice mismatch of opposite sign between the substrate and the contact layer.
8. The arrangement according to claim 7 , wherein the substrate has a first lattice constant (A 1 ), the first diode laser has a second lattice constant (A 2 ) and the contact layer has a third lattice constant (A 3 ), the difference formed by the second lattice constant (A 2 ) minus the first lattice constant (A 1 ) having the same sign as the difference formed by the first lattice constant (A 1 ) minus the third lattice constant (A 3 ).
9. The arrangement according to claim 7 , wherein the contact layer contains gallium phosphide, zinc sulphide, zinc telluride, zinc sulphide telluride, zinc selenide, zinc suiphide selenide, indium gallium phosphide or indium gallium arsenic phosphide.