Radiation-emitting semi-conductor component
View Patent ↗In a radiation-emitting semiconductor component with a layer structure comprising an n-doped confinement layer, a p-doped confinement layer, and an active, photon-emitting layer disposed between the n-doped confinement layer and the p-doped confinement layer, it is provided according to the invention that the n-doped confinement layer is doped with a first n-dopant (or two mutually different n-dopants) for producing high active doping and a sharp doping profile, and the active layer is doped with only one second n-dopant, different from the first dopant, for improving the layer quality of the active layer.
1. A radiation-emitting semiconductor component with a layer structure comprising
an n-doped confinement layer doped with a first n-dopant,
a p-doped confinement layer, and
an active, photon-emitting layer disposed between said n-doped confinement layer and said p-doped confinement layer, and doped with a second n-dopant different from the first n-dopant, wherein
at least one layer of the layer structure is formed of a material selected from the group consisting of AlInGaP, AlGaAs, InGaAlAs, and InGaAsP,
a first waveguide layer doped with said second n-dopant is disposed between said active layer and said n-doped confinement layer, and a second waveguide layer is disposed between said active layer and said p-doped confinement layer, and
the first waveguide layer comprises a single layer that is doped with the second n-dopant and adjoins the active layer.
2. The radiation-emitting semiconductor component as recited in claim 1 , wherein said first n-dopant comprises silicon.
3. The radiation-emitting semiconductor component as recited in claim 1 , wherein said second n-dopant comprises telluride.
4. The radiation-emitting semiconductor component as recited in claim 1 , wherein said p-doped confinement layer comprises magnesium, carbon or zinc dopant.
5. A radiation-emitting semiconductor component with a layer structure comprising
an n-doped confinement layer doped with a first n-dopant,
a p-doped confinement layer, and
an active, photon-emitting layer disposed between said n-doped confinement layer and said p-doped confinement layer, and doped with a second n-dopant different from the first n-dopant, wherein
at least one layer of the layer structure is formed of a material selected from the group consisting of AlInGaP, AlGaAs, InGaAlAs, and InGaAsP,
said n-doped confinement layer further includes the second n-dopant or an additional n-dopant,
a first waveguide layer doped with said second n-dopant is disposed between said active layer and said n-doped confinement layer, and a second waveguide layer is disposed between said active layer and said p-doped confinement layer, and
the first waveguide layer comprises a single layer that is doped with the second n-dopant and adjoins the active layer.
6. The radiation-emitting semiconductor component as recited in claim 5 , wherein said first n-dopant comprises silicon.
7. The radiation-emitting semiconductor component as recited in claim 5 , wherein said second n-dopant comprises telluride.
8. The radiation-emitting semiconductor component as recited in claim 5 , wherein said p-doped confinement layer comprises magnesium, carbon or zinc dopant.
9. The radiation-emitting semiconductor component as recited in claim 5 , wherein the additional dopant is said second n-dopant.