Radiation-emitting semiconductor element
View Patent ↗A radiation-emitting semiconductor component having a semiconductor body ( 1 ), which has an active zone ( 2 ), in which, for the purpose of electrical contact connection, a patterned contact layer ( 3 ) is applied on a surface of the semiconductor body. Interspaces ( 4 ) are distributed over the contact layer ( 3 ) and are provided for the purpose of forming free areas ( 5 ) on the surface which are not covered by the contact layer ( 3 ). The free areas ( 5 ) are covered with a mirror ( 6 ). The separation of the two functions of contact connection and reflection makes it possible to achieve a particularly high performance of the component.
1. A radiation-emitting semiconductor component comprising:
a semiconductor body comprising an active zone;
a patterned contact layer applied on a surface of the semiconductor body for electrical contact connection, wherein the patterned contact layer has a thickness which is less than 100 nm;
interspaces distributed over the patterned contact layer for the purpose of forming free areas on the surface which are not covered by the patterned contact layer; and
a mirror for covering the free areas.
2. The component according to claim 1 , in which the mirror is embodied as a closed mirror layer covering the free areas and the patterned contact layer.
3. The component according to claim 2 , in which the material of the patterned contact layer links electrically better to the semiconductor body than the material of the mirror layer.
4. The component according to claim 2 , in which the material of the mirror layer reflects the radiation generated in the active zone better than the material of the patterned contact layer.
5. The component according to claim 1 , in which the surface of the semiconductor body is formed by a p-doped layer made of a nitride compound semiconductor, and in which the material of the patterned contact layer forms an ohmic contact with respect to the surface.
6. The component according to claim 1 , in which the patterned contact layer contains platinum or nickel.
7. The component according to claim 2 , in which the mirror layer contains silver or aluminum.
8. The component according to claim 1 , in which the patterned contact layer comprises contact elements that are separated from one another, and in which a connecting layer for making contact among the contact elements is provided on the patterned contact layer.
9. The component according to claim 8 , in which the contact elements have the form of cylinders.
10. The component according to claim 8 , in which the contact elements are arranged at the nodes of a regular grid.
11. The component according to claim 10 , in which the regular grid is a square grid.
12. The component according to claim 8 , in which the surface of the semiconductor body is formed by a p-doped layer made of a nitride compound semiconductor, the p-doped layer having a surface which faces the active zone and constitutes an interface, wherein the distance between every two adjacent contact elements is related to the transverse conductivity of the p-doped layer such that the entire interface can be energized.
13. The component according to claim 10 , in which the regular grid is a hexagonal grid.
14. The component according to claim 1 , in which the interspaces are filled with a filler in order to at least partially planarize the surface of the patterned contact layer.
15. The component according to claim 14 , in which the filler contains an electrically conductive material.
16. The component according to claim 14 , in which the filler contains a transparent and electrically insulating material.
17. The component according to claim 15 , in which the filler contains zinc oxide or indium tin oxide.
18. The component according to claim 16 , in which the filler contains SiO2, a compound made of silicon and nitrogen or titanium oxide or plastic.
19. The component according to claim 14 , in which the filler forms Bragg reflectors.
20. The component according to claim 19 , in which the Bragg reflectors are produced from dielectrics.
21. The component according to claim 19 , in which the Bragg reflectors are produced by epitaxy.
22. The component according to claim 1 , in which the mirror is formed by Bragg reflectors arranged in the interspaces of the contact layer.
23. The component according to claim 22 , in which the Bragg reflectors contain layer pairs lying one on top of the other, of which respectively one has a high refractive index and one has a low refractive index, and in which a number greater than 5 of layer pairs are provided in each Bragg reflector.
24. A radiation-emitting semiconductor component comprising:
a semiconductor body comprising an active zone;
a patterned contact layer applied on a surface of the semiconductor body for electrical contact connection, wherein the patterned contact layer comprises contact elements that are separated from one another, and wherein the contact elements have the form of cylinders;
interspaces distributed over the patterned contact layer for the purpose of forming free areas on the surface which are not covered by the patterned contact layer; and
a mirror for covering the free areas.
25. A radiation-emitting semiconductor component comprising:
a semiconductor body comprising an active zone;
a patterned contact layer applied on a surface of the semiconductor body for electrical contact connection;
interspaces distributed over the patterned contact layer for the purpose of forming free areas on the surface which are not covered by the patterned contact layer, wherein the interspaces are filled with a filler in order to at least partially planarize the surface of the patterned contact layer, and wherein the filler contains a transparent and electrically insulating material; and
a mirror for covering the free areas.