Radiation-emitting chip
View Patent ↗A light-emitting chip ( 3 ) has a lens-type coupling-out window ( 4 ), whose base area ( 5 ) is provided with a mirror area ( 6 ). Arranged on a coupling-out area ( 7 ) of the coupling-out window ( 4 ) is a layer sequence ( 9 ), with a photon-emitting pn junction ( 10 ). The photons emitted by the pn junction are reflected at the mirror area ( 6 ) and can leave the coupling-out window ( 4 ) through the coupling-out area ( 7 ).
1. A chip for optoelectronics, in particular an LED chip, having a photon-emitting active region and a coupling-out window having at least one coupling-out area,
wherein
the active region is arranged downstream of the coupling-out window relative to a main radiation direction of the chip, wherein a mirror area is formed on that side of the coupling-out window which is opposite to the active region wherein the coupling-out areas project laterally beyond the side areas of the active region, and wherein a contact layer is formed between the active region and the coupling-out window.
2. The chip as claimed in claim 1 ,
wherein
the active region is a layer sequence formed on the coupling-out window.
3. The chip as claimed in claim 1 ,
wherein
the chip has a chip axis running through the active region.
4. The chip as claimed in claim 1 ,
wherein
the coupling-out window has a dome-like, in particular spherical-cap-like form, the coupling-out window tapering toward the active region.
5. The chip as claimed in claim 4 ,
wherein
a radius of curvature of a coupling-out area R 2 is greater than or equal
2
H
-
R
2
n
A
n
i
and less than or equal to
2
H
+
R
2
n
A
n
i
,
where H is equal to the to height of the chip.
6. The chip as claimed in claim 5 ,
wherein
the following holds true for half the maximum dimension R 1 of the layer sequence along the coupling-out area:
R 1 <R 2 n A /n i .
7. The chip as claimed in claim 1 ,
wherein
the coupling-out window is formed in the shape of a truncated pyramid at least in sections.
8. The chip as claimed in claim 7 ,
wherein
the coupling-out window formed in the shape of a truncated pyramid at least in sections envelopes a spherical segment.
9. The chip as claimed in claim 7 ,
wherein
the coupling-out window which is in the shape of a truncated pyramid at least in sections envelopes a rotational ellipsoid with a longitudinal axis running through the active region.
10. The chip as claimed in claim 1 ,
wherein
the coupling-out window is formed as a Fresnel lens.
11. The chip as claimed in claim 1 ,
wherein
the mirror area has, below the active region, elevations which direct the photons in a lateral direction.
12. The chip as claimed in claim 1 ,
wherein
the minor area is curved.
13. The chip as claimed in claim 12 ,
wherein
the mirror area is formed in concave fashion as seen from the active region.
14. The chip as claimed in claim 13 ,
wherein
the mirror area is formed as a paraboloid.
15. The chip as claimed in claim 1 ,
wherein
the mirror area is formed as a Fresnel mirror.
16. The chip as claimed in claim 1 ,
wherein
the mirror area serves as a contact area.
17. The chip as claimed in claim 1 ,
wherein
the mirror area is formed besides contact areas.
18. The chip as claimed in claim 17 ,
wherein
the contacts are formed in strip-type fashion.
19. The chip as claimed in claim 17 ,
wherein
the contacts are formed in reticulated fashion.
20. The chip as claimed in claim 17 ,
wherein
the contact area is opposite the active region.
21. The chip as claimed in claim 1 ,
wherein
a nitride-based active region is provided and the coupling-out window has SiC or SiC-based material.
22. The chip as claimed in claim 21 ,
wherein
a radiation-emitting layer of the active region has GaN, InGaN, AlGaN and/or InGaAlN.
23. The chip as claimed in claim 1 ,
wherein
the active region is grown on the coupling-out window.
24. A chip for optoelectronics, in particular an LED chip, having a photon-emitting active region and a coupling-out window having at least one coupling-out area,
wherein the active region is arranged downstream of the coupling window relative to a main radiation direction of the chip, wherein a mirror area is formed on that side of the coupling-out window which is opposite to the active region, wherein the coupling-out areas project laterally beyond the side areas of the active region, and wherein the material of the coupling-out window has a larger refractive index than the material of the active region.