IP Library Granted Patent US 7,356,062
Granted Patent B2
US 7,356,062 · App. 10/926,465 · Granted Apr 8, 2008

Semiconductor laser with reduced heat loss

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Quick Facts
Patent No.
US 7,356,062
App. No.
10/926,465
Granted
Apr 8, 2008
Kind
B2
Abstract

A semiconductor laser having a semiconductor chip ( 1 ) which contains an active layer ( 5 ) and emits radiation in a main radiating direction ( 6 ). The active layer ( 5 ) is structured in a direction perpendicular to the main radiating direction ( 6 ) in order to reduce heating of the semiconductor chip ( 1 ) by spontaneously emitted radiation ( 10 ).

Claims (9)

1. A semiconductor laser having a semiconductor chip which contains an active layer and emits radiation in a main radiating direction, wherein the active layer is structured in a direction perpendicular to the main radiating direction to reduce heating of the semiconductor chip by spontaneously emitted radiation, and the active layer has the form of a mesa, the mesa comprising side walls having a reflection-reducing layer.

2. The semiconductor laser according to claim 1 , wherein the semiconductor laser is a disc laser.

3. The semiconductor laser according to claim 2 , wherein the disc laser has an external resonator.

4. The semiconductor laser according to claim 1 , wherein the active layer has a region provided for optical pumping by a pump radiation source.

5. The semiconductor laser according to claim 4 , wherein the active layer has the form of a mesa, and the width of the mesa in a direction perpendicular to the main radiating direction of the semiconductor laser is approximately as large as the width of the optically pumped region.

6. The semiconductor laser according to claim 1 , wherein the laser contains a heat sink.

7. The semiconductor laser according to claim 6 , wherein no substrate is contained between the heat sink and the active layer.

8. The A semiconductor laser comprising a semiconductor chip which contains an active layer and emits radiation in a main radiating direction, wherein the active layer is structured in a direction perpendicular to the main radiating direction to reduce heating of the semiconductor chip by spontaneously emitted radiation;

wherein the active layer has the form of a mesa, the mesa comprising side walls that extend parallel or obliquely to the main radiating direction, and the side walls comprising a reflection-reducing layer.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2020
From: OSRAM OPTO SEMICONDUCTORS GMBH
To: OSRAM OLED GMBH
Reel/Frame 051467/0906 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 19, 2019
From: OSRAM GMBH
To: OSRAM OPTO SEMICONDUCTORS GMBH
Reel/Frame 051381/0694 →