Semiconductor chip for optoelectronics
View Patent ↗An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.
1. A semiconductor chip for optoelectronics, comprising:
an active thin-film layer in which a photon-emitting active zone is fashioned;
a carrier member for the thin-film layer that is arranged at a side of the thin-film layer facing away from an emission direction of the chip and is connected thereto; and
a plurality of mesas formed at a boundary between said carrier member and said active thin-film layer, each of said plural mesas protruding from a second part of the thin-film layer and being formed by at least one cavity formed in the active thin-film layer proceeding from the carrier member, and said plural mesas being in a single light emitting diode and being connected with each other by the second part of said thin-film layer, said active zone being arranged in the second part of the thin-film layer.
2. The semiconductor chip according to claim 1 , wherein a cross-section of said at least one cavity becomes smaller over its course away from said carrier member.
3. The semiconductor chip according to claim 1 , wherein said active thin-film layer includes a layer sequence based on In 1-x-y Al x Ga y P (whereby 0≦x≦1, 0≦y≦1 and x+y≦1 applies).
4. The semiconductor chip according to claim 1 , wherein at least one trajectory of photons emitted by said active zone leads from a respective mesa to a neighboring one of said plural mesas.
5. The semiconductor chip according to claim 1 , wherein said plural mesas taper toward said carrier member.
6. The semiconductor chip according to claim 5 , wherein said plural mesas have concave sidewalls.
7. The semiconductor chip according to claim 5 , wherein said plural mesas are in a form of truncated pyramids.
8. The semiconductor chip according to claim 1 , wherein said second part of the thin-film layer is transparent to a greatest degree for photons emitted by said active zone.
9. The semiconductor chip according to claim 1 , wherein said second part of the thin-film layer is highly doped.
10. The semiconductor chip according to claim 1 , further comprising:
a reflection layer covering said plural mesas.
11. The semiconductor chip according to claim 10 , wherein said reflection layer includes a metallization layer underlaid with an insulating layer.
12. The semiconductor chip according to claim 1 , wherein said active thin-film layer has a thickness which is less than 50 μm.
13. The semiconductor chip according to claim 1 , wherein said active thin-film layer has a thickness which is less than 25 μm.
14. The semiconductor chip according to claim 1 , wherein said at least one cavity has a depth that is greater than half a thickness of said thin-film layer.
15. The semiconductor chip according to claim 1 , further comprising:
an electrical contact area on a side of said carrier member facing away from said thin-film layer;
wherein said carrier member is electrically conductive.
16. The semiconductor chip according to claim 1 , further comprising:
at least one contact location of said thin-film layer, said thin-film layer having no cavity in a region opposite said at least one contact location.
17. The semiconductor chip according to claim 1 , wherein said plural mesas have a truncated pyramid-like or conical frustum-like shape with slanting sidewalls at an angle of incidence φ of between about 5° and 60° relative to a lateral extent direction of said thin-film layer.
18. The semiconductor chip as claimed in claim 17 , wherein the angle of incidence of said slanting sidewalls is between about 10° and 40°.
19. The semiconductor chip according to claim 17 , wherein said angle of incidence φ is between about 15° and 30°.
20. The semiconductor chip as claimed in claim 1 , wherein said active thin-film layer has been epitaxially grown on a base substrate that is then removed.
21. The semiconductor chip as claimed in claim 11 , wherein said insulating layer is interrupted by through-contacts.
22. The semiconductor chip according to claim 1 , wherein the chip comprises more than two mesas.
23. A semiconductor chip for optoelectronics, comprising:
an active thin-film layer in which a photon-emitting active zone is formed;
a carrier member for the thin-film layer that is arranged at a side of the thin-film layer facing away from an emission direction of the chip and is connected thereto; and
a plurality of mesas formed at a boundary between said carrier member and said active thin-film layer, each of said plural mesas being formed by at least one cavity formed in the active thin-film layer proceeding from the carrier member, said plural mesas being in a single light emitting diode and being covered by a reflection layer comprising an insulating layer and a metallization layer applied thereon, said insulating layer being interrupted by through-contacts.
24. The semiconductor chip according to claim 23 , wherein the chip comprises more than two mesas.
25. A semiconductor chip for optoelectronics, comprising
an active thin-film layer in which a photon-emitting active zone is fashioned formed;
said thin-film layer comprising a bonding side and a plurality of mesas, each of said plural mesas being formed by at least one cavity proceeding from said bonding side of the active thin-film layer and being covered by a reflection layer comprising an insulating layer and a metallization layer applied thereon, said insulating layer being interrupted by through-contacts.
26. The semiconductor chip as claimed in claim 25 , wherein the chip comprises more than two mesas.
27. A semiconductor chip for optoelectronics, comprising:
an active thin-film layer in which a photon-emitting active zone is fashioned formed;
said thin-film layer comprising a plurality of mesas formed at a side of the thin-film layer facing away from an emission direction of the chip, each of said plural mesas protruding from a second part of the thin-film and being formed by at least one cavity formed in the active thin-film layer proceeding from said side of the thin-film layer facing away from an emission direction of the chip carrier member, and said plural mesas being connected by the second part of the thin-film which includes at least a portion of said active zone.
28. The semiconductor chip as claimed in claim 27 , wherein said active thin-film layer has been epitaxially grown on a base substrate that is then removed.
29. The semiconductor chip as claimed in claim 27 , wherein the chip comprises more than two mesas.
30. A semiconductor chip for optoelectronics, comprising:
an active thin-film layer in which a photon-emitting active zone is formed;
said thin-film layer comprising a bonding side and a plurality of mesas, each of said plural mesas being formed by at least one cavity proceeding from said bonding side of the active thin-film layer and protruding from a second part of the thin-film, said plural mesas being connected by the second part of the thin-film lay which includes at least a portion of said active zone.
31. The semiconductor chip as claimed in claim 30 , wherein the chip comprises more than two mesas.