Opto-electronic component with radiation-transmissive electrical contact layer

1. An optoelectronic component, comprising:

an epitaxial semiconductor layer sequence having an active zone that emits electromagnetic radiation; and

at least one electrical contact region having a bonding pad and at least one radiation-transmissive electrical contact layer, which contains ZnO and is electrically conductively connected to an outer semiconductor layer, wherein a surface of said contact layer which is disposed facing away from said outer semiconductor layer is completely or partially free of said bonding pad; and

a watertight material applied to wherever said surface of the contact layer is free of said bonding pad so as to protect the contact layer from moisture.

2. The optoelectronic component according to claim 1 , wherein the watertight material is a dielectric that is transparent to electromagnetic radiation emitted by the optoelectronic component.

3. The optoelectronic component according to claim 2 , wherein the dielectric comprises one or more of the substances Si x N y , SiO, SiO 2 , Al 2 O 3 and SiO x N y .

4. The optoelectronic component according to claim 1 , wherein a refractive index of the watertight material is less than the refractive index of the contact layer and is adapted to minimize to the greatest possible extent reflections of radiation emitted by the optoelectronic component at interfaces with respect to the watertight material.

5. The optoelectronic component according to claim 1 , wherein the contact layer has a thickness corresponding to about an integer multiple of half a wavelength of radiation emitted by the optoelectronic component, and the watertight material has a thickness corresponding to about a quarter of said wavelength.

6. The optoelectronic component according to claim 1 , wherein a thickness of the watertight material is about 50 to 200 nm, inclusive.