Optoelectronic component

1. An optoelectronic component comprising:

a radiation-emitting semiconductor chip arranged in a recess of a basic body or housing, the semiconductor chip being embedded in the recess at least partly in a chip encapsulation, which is essentially transmissive with respect to a radiation emitted by the semiconductor chip;

wherein the chip encapsulation is formed in a diffusely scattering fashion;

wherein a sidewall of the recess is black;

wherein the chip encapsulation contains radiation-scattering particles at which the radiation generated in the semiconductor chip is scattered; and

wherein a proportion of radiation-scattering particles in the chip encapsulation is between approximately 0.75% and approximately 1.25%.

2. The optoelectronic component as claimed in claim 1 , wherein the chip encapsulation has a reaction resin.

3. The optoelectronic component as claimed in claim 1 , wherein the sidewalls of the recess in the basic body are formed as reflectors.

4. The optoelectronic component as claimed in claim 1 , wherein the basic body or the housing is produced from a thermosetting plastic or thermoplastic material.

5. The optoelectronic component as claimed in claim 3 , wherein at least one front side of the basic body or housing is made black.

6. The optoelectronic component as claimed in claim 1 , wherein a plurality of semiconductor chips are arranged next to one another in the recess.

7. The optoelectronic component as claimed in claim 6 , wherein the semiconductor chips in each case emit radiation of only one spectral color and the various semiconductor chips emit radiation of different colors.

8. The optoelectronic component as claimed in claim 1 , wherein the semiconductor chip or at least one of the semiconductor chips has at least one sidewall region through which a substantial part of the radiation generated in the chip is emitted laterally or rearward in the direction of the basic body.

9. The optoelectronic component as claimed in claim 8 , wherein the at least one sidewall region runs obliquely, in curved fashion or in stepped fashion with respect to the main direction of extent of a radiation-generating semiconductor layer sequence produced epitaxially.

10. The optoelectronic component as claimed in claim 1 , wherein the chip encapsulation is formed in the diffusely scattering fashion such that a large part of radiation emitted laterally toward the basic body or housing by the semiconductor chip is deflected toward a radiation coupling-out area of the chip encapsulation before impinging on an area of the basic body or housing that delimits the recess.

11. The optoelectronic component as claimed in claim 1 , wherein all sidewalls of the recess are black.

12. The optoelectronic component as claimed in claim 1 , wherein the basic body or housing is black.

13. The optoelectronic component as claimed in claim 1 , wherein the basic body or housing is produced from a material which is at least partly absorbent with respect to the radiation emitted by the semiconductor chip.

14. The optoelectronic component as claimed in claim 1 , wherein the semiconductor chip emits a large part of its radiation via sidewalls of the chip.

15. The optoelectronic component as claimed in claim 1 , wherein the chip encapsulation is formed in the diffusely scattering fashion such that a large part of the radiation emitted by the semiconductor chip in a direction away from a radiation coupling-out area of the chip encapsulation is deflected toward said radiation coupling-out area of the chip encapsulation.

16. The optoelectronic component as claimed in claim 2 , wherein the reaction resin is one of an epoxy resin, an acrylic resin or a silicone resin.

17. An optoelectronic component comprising:

a radiation-emitting semiconductor chip arranged in a recess of a basic body, the semiconductor chip being embedded in the recess at least partly in a chip encapsulation, which is essentially transmissive with respect to a radiation emitted by the semiconductor chip;

wherein the chip encapsulation is formed in a diffusely scattering fashion;

wherein a sidewall of the recess is black;

wherein the chip encapsulation contains radiation-scattering particles at which the radiation generated in the semiconductor chip is scattered; and

wherein the semiconductor chip has at least one sidewall region through which a substantial part of the radiation generated in the chip is emitted laterally or rearward in the direction of the basic body.

18. The optoelectronic component as claimed in claim 17 , wherein the proportion of radiation-scattering particles in the chip encapsulation is between approximately 0.1% and approximately 10%.

19. The optoelectronic component as claimed in claim 18 , wherein the proportion of radiation-scattering particles in the chip encapsulation is between approximately 0.15% and approximately 3.0%.

20. The optoelectronic component as claimed in claim 19 , wherein the proportion of radiation-scattering particles in the chip encapsulation is between approximately 0.75% and approximately 1.25%.

21. The optoelectronic component as claimed in claim 17 , wherein the at least one sidewall region runs obliquely, in a curved fashion or in a stepped fashion with respect to a main direction of extent of a radiation-generating semiconductor layer sequence produced epitaxially.

22. A method for providing an optoelectronic component having an increased proportion of radiation which emerges through an emission area of the optoelectronic component in an axial direction, the method comprising:

arranging a radiation-emitting semiconductor chip in a recess of a basic body or housing; and

at least partly embedding the semiconductor chip in a chip encapsulation which is essentially transmissive with respect to the radiation emitted by the semiconductor chip;

wherein the chip encapsulation is formed in a diffusely scattering fashion by radiation-scattering particles contained in the chip encapsulation and at which the radiation generated in the semiconductor chip is scattered; and

wherein a proportion of radiation-scattering particles in the chip encapsulation is between approximately 0.75% and approximately 1.25% to increase the proportion of the radiation emerging through the emission area of the optoelectronic component in the axial direction.