GaN-based radiation-emitting thin-layered semiconductor component
View Patent ↗A radiation-emitting thin-film semiconductor component with a multilayer structure ( 12 ) based on GaN, which contains an active, radiation-generating layer ( 14 ) and has a first main area ( 16 ) and a second main area ( 18 )—remote from the first main area—for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the first main area ( 16 ) of the multilayer structure ( 12 ) is coupled to a reflective layer or interface, and the region ( 22 ) of the multilayer structure that adjoins the second main area ( 18 ) of the multilayer structure is patterned one- or two-dimensionally.
1. A radiation-emitting semiconductor device comprising:
a reflective layer or interface; and
a multilayer structure comprising:
an active, radiation-generating layer;
a first main area coupled to the reflective layer or interface; and
a second main area remote from the first main area for coupling out the radiation generated in the active, radiation-generating layer,
wherein the multilayer structure is an epitaxial layer structure, the semiconductor device is free of a deposition substrate of the multilayer structure, a region of the multilayer structure that adjoins the second main area of the multilayer structure is patterned one- or two-dimensionally to form convex elevations, and a height (h 1 ) of the elevations is at least as large as a height (h 2 ) of an unpatterned region of the multilayer structure that is between the active, radiation-generating layer and the elevations.
2. The semiconductor device as claimed in claim 1 , wherein the elevations have the form of truncated pyramids or truncated cones or a trapezoidal cross-sectional form.
3. The semiconductor device as claimed in claim 1 , wherein the elevations have the form of cones or a triangular cross-sectional form.
4. The semiconductor device as claimed in claim 1 , wherein the elevations have the form of sphere segments or a circle segment cross-sectional form.
5. The semiconductor device as claimed in claim 1 , wherein the elevations have an aperture angle (α) of between approximately 30° and approximately 70°.
6. The semiconductor device as claimed in claim 5 , wherein the elevations have an aperture angle (α) of between approximately 40° and approximately 50°.
7. The semiconductor device as claimed in claim 1 , wherein the height (h 1 ) of the elevations is approximately twice as large as the height (h 2 ) of the plane region of the multilayer structure between the active, radiation-generating layer and the elevations.
8. The semiconductor device as claimed in claim 1 , wherein a grid dimension (d) of the elevations is at most approximately five times as large as the height (h 1 ) of the elevations.
9. The semiconductor device as claimed in claim 8 , wherein the grid dimension (d) of the elevations is at most approximately three times as large as the height (h 1 ) of the elevations.
10. The semiconductor device as claimed in claim 1 , wherein the reflective layer or interface coupled to the first main area of the multilayer structure has a reflectivity of at least 70%.
11. The semiconductor device as claimed in claim 1 , wherein the reflective layer or interface coupled to the first main area of the multilayer structure has a reflectivity of at least 85%.
12. The semiconductor device as claimed claim 1 , wherein the multilayer structure is applied by its first main area via the reflective layer on a carrier substrate or a carrier substrate forms the reflective interface with the first main area.
13. The semiconductor device as claimed in claim 12 , wherein the reflective layer or the carrier substrate also serves as a contact area of the semiconductor device.
14. The semiconductor device as claimed claim 1 , wherein a conductive, transparent layer is applied on the second main area of the multilayer structure.
15. The semiconductor device as claimed in claim 1 , wherein a transparent protective layer is applied on the second main area of the multilayer structure.
16. The semiconductor device as claimed in claim 1 , wherein the multilayer structure is based on GaN.
17. A radiation-emitting semiconductor device comprising:
a substantially planar reflective layer or interface, the reflective layer being applied on a carrier substrate or the reflective interface being formed by a carrier substrate; and
a multilayer structure comprising:
an active, radiation-generating layer;
a first main surface coupled to the reflective layer or interface; and
a second main surface remote from the first main surface for coupling out the radiation generated in the active, radiation-generating layer;
a transparent layer disposed between the first main surface of the multilayer structure and the reflective layer or interface, said transparent layer being patterned one- or two-dimensionally,
wherein the multilayer structure is an epitaxial layer structure, and the semiconductor device is free of a deposition substrate of the multilayer structure; and
wherein the transparent layer comprises convex elevations, the convex elevations tapering in a direction away from the first main surface of the multilayer structure to the reflective layer or interface.
18. The semiconductor device as claimed in claim 17 , wherein the transparent layer is conductive.
19. The semiconductor device as claimed in claim 17 , wherein the elevations have the form of truncated pyramids or truncated cones or a trapezoidal cross-sectional form.
20. The semiconductor device as claimed in claim 17 , wherein the elevations have an aperture angle (α) of between approximately 30° and approximately 70°.
21. The semiconductor device as claimed in claim 17 , wherein the elevations have an aperture angle (α) of between approximately 40° and approximately 50°.
22. The semiconductor device as claimed in claim 17 , wherein the height (h 1 ) of the elevations is at least as large as the height (h 2 ) of a plane region of the multilayer structure between the active, radiation-generating layer and the elevations.
23. The semiconductor device as claimed in claim 22 , wherein the height (h 1 ) of the elevations is approximately twice as large as the height (h 2 ) of the plane region of the multilayer structure between the active, radiation-generating layer and the elevations.
24. The semiconductor device as claimed in claim 17 , a grid dimension (d) of the elevations is at most approximately five times as large as the height (h 1 ) of the elevations.
25. The semiconductor device as claimed in claim 24 , wherein the grid dimension (d) of the elevations is at most approximately three times as large as the height (h 1 ) of the elevations.
26. The semiconductor device as claimed in claim 17 , wherein the layer or interface coupled to the first main area of the multilayer structure has a reflectivity of at least 70%.
27. The semiconductor device as claimed in claim 26 , wherein the layer or interface coupled to the first main area of the multilayer structure has a reflectivity of at least 85%.
28. The semiconductor device as claimed in claim 17 , wherein the reflective layer or the carrier substrate also serves as a contact area of the semiconductor device.
29. The semiconductor device as claimed in claim 17 , wherein a transparent protective layer is applied on the second main area of the multilayer structure.
30. The semiconductor device as claimed in claim 17 , wherein the multilayer structure is based on GaN.
31. The semiconductor device as claimed in claim 17 , wherein, due to the convex elevations, the transparent layer comprises first and second regions, the first regions having a thickness greater than a thickness of the second regions.
32. The semiconductor device as claimed in claim 17 , wherein the active, radiation-generating layer is a continuous layer, and the transparent layer comprises a plurality of elevations that overlap with the active, radiation-generating layer.