Radiation-sensitive semiconductor body having an integrated filter layer
View Patent ↗A radiation-sensitive semiconductor body which has at least one radiation-absorbent active area ( 2 ) between at least two contact layers ( 6, 7 ) and which receives electromagnetic radiation in a wavelength range between λ 1 and λ 2 where λ 2 >λ 1 . A filter layer ( 5 ) is arranged between the active area ( 2 ) and a radiation input surface ( 9 ). The active area ( 2 ) detects electromagnetic radiation at a wavelength below λ 2 . The filter layer ( 5 ) absorbs electromagnetic radiation at a wavelength below λ 1 , and passes electromagnetic radiation at a wavelength above λ 1 .
1. A radiation-sensitive semiconductor body which has at least one radiation-absorbent active area and which receives electromagnetic radiation in a wavelength range between λ 1 and λ 2 , where λ 2 >λ 1 ,
wherein
the semiconductor body has a filter layer between the active area and a radiation input surface, with
the active area detecting electromagnetic radiation at a wavelength below λ 2 ,
the filter layer absorbing electromagnetic radiation below a wavelength λ 1 and converting the absorbed radiation to light at a wavelength above λ 2 , and
the filter layer passing electromagnetic radiation at a wavelength above λ 1 .
2. The semiconductor body as claimed in claim 1 , wherein the filter layer has at least one quantum well structure.
3. The semiconductor body as claimed in claim 1 , wherein the radiation input surface is formed by a surface of the filter layer facing away from the active area, or by a semiconductor layer applied to the filter layer.
4. The semiconductor body as claimed in claim 1 , wherein the filter layer is comprises a semiconductor layer sequence.
5. The semiconductor body as claimed in claim 1 , wherein the active area comprises a quantum well structure.
6. The semiconductor body as claimed in claim 1 , wherein a first contact layer, which is arranged on the side of the active area facing the radiation input surface, is applied at least partially to the filter layer.
7. The semiconductor body as claimed in claim 1 , wherein a substrate is arranged between the active area and a second contact layer, and the second contact layer is applied to the semiconductor body on that side of the active area which faces away from the radiation input surface.
8. The semiconductor body as claimed in claim 7 , wherein the substrate is electrically conductive.
9. The semiconductor body as claimed in claim 1 , wherein the active area is arranged between two mirrors, with the mirror which is arranged between the active area and the radiation input surface being partially transparent.
10. The semiconductor body as claimed in claim 9 , wherein the mirror which is arranged between the active area and the radiation input surface is partially transparent, at least for radiation in the wavelength range between λ 1 and λ 2 .
11. The semiconductor body as claimed in claim 9 , wherein the two mirrors comprise Bragg mirrors.
12. The semiconductor body as claimed in claim 9 , wherein the two mirrors form a resonator which is tuned to radiation in the wavelength range between λ 1 and λ 2 .
13. The semiconductor body as claimed in claim 1 , wherein one of the two mirrors is arranged between the filter layer and the active area.
14. The semiconductor body as claimed in claim 1 , wherein the two mirrors contain a semiconductor material.
15. The semiconductor body as claimed in claim 1 , wherein the semiconductor body comprises a photodiode or a phototransistor.
16. The semiconductor body as claimed in claim 2 , wherein the radiation absorbed in the filter layer produces charge carriers which are trapped in the at least one quantum well structure before re-emission, the charge carriers being energetically relaxed in the quantum well.