Radiation-emitting semiconductor component

1. A radiation-emitting semiconductor component having a layer structure, comprising:

an n-doped cladding layer ( 18 ),

a p-doped cladding layer ( 20 ),

an active layer ( 14 ) based on InGaAlP arranged between the n-doped cladding layer ( 18 ) and the p-doped cladding layer ( 20 ), and

a diffusion stop layer ( 16 ) arranged between the active layer ( 14 ) and the p-doped cladding layer ( 20 ), wherein

the diffusion stop layer ( 16 ) has a strained superlattice and is highly n-doped.

2. The radiation-emitting semiconductor component as claimed in claim 1 , wherein

the diffusion stop layer ( 16 ) has a superlattice which is alternately tensile/compressively strained.

3. The radiation-emitting semiconductor component as claimed in claim 2 , wherein the superlattice of the diffusion stop layer ( 16 ) has N periods of tensile-strained In x (Ga y Al 1−y ) 1−x P layers ( 16 a ), where 0≦×≦1, 0≦y≦1, and compressively strained In x (Ga y Al 1−y ) 1−x P layers ( 16 b ), where 0≦×≦1, 0 ≦y≦1, N lying between 2 and 40, preferably between 5 and 20, particularly preferably between 8 and 15.

4. The radiation-emitting semiconductor component as claimed in claim 3 , wherein

the superlattice of the diffusion stop layer ( 16 ) consists of InAlP layers.

5. The radiation-emitting semiconductor component as claimed in claim 4 , wherein

the strain lies in the range of 0.1% to 5%, preferably in the range of 0.5% to 2%, particularly preferably in the range of 0.7% to 1%.

6. The radiation-emitting semiconductor component as claimed in claim 4 , wherein

a transparent coupling-out layer ( 22 ), which preferably essentially consists of GaP, is arranged on the topmost cladding layer ( 20 ) of the layer structure.

7. The radiation-emitting semiconductor component as claimed in claim 3 , wherein

the strain lies in the range of 0.1% to 5%, preferably in the range of 0.5% to 2%, particularly preferably in the range of 0.7% to 1%.

8. The radiation-emitting semiconductor component as claimed in claim 3 , wherein

a transparent coupling-out layer ( 22 ), which preferably essentially consists of GaP, is arranged on the topmost cladding layer ( 20 ) of the layer structure.

9. The radiation-emitting semiconductor component as claimed in claim 2 , wherein

the strain lies in the range of 0.1% to 5%, preferably in the range of 0.5% to 2%, particularly preferably in the range of 0.7% to 1%.

10. The radiation-emitting semiconductor component as claimed in claim 1 , wherein

the strain lies in the range of 0.1% to 5%, preferably in the range of 0.5% to 2%, particularly preferably in the range of 0.7% to 1%.

11. The radiation-emitting semiconductor component as claimed in claim 1 , wherein

the p-doped cladding layer ( 20 ) is p-doped with magnesium.

12. The radiation-emitting semiconductor component as claimed in claim 1 , wherein

the diffusion stop layer ( 16 ) is n-doped with tellurium.

13. The radiation-emitting semiconductor component as claimed in claim 12 , wherein

the n-type dopant concentration lies above 0.5×10 18 cm −3 , in particular between 0.75×10 18 cm −3 and 1.5×10 18 cm −3 (limits included).

14. The radiation-emitting semiconductor component as claimed in claim 1 , wherein

the n-type dopant concentration lies above 0.5×10 18 cm −3 , in particular between them and including 0.75 and up to and including 1.5×10 18 cm −3 .

15. The radiation-emitting semiconductor component as claimed in claim 1 , wherein

a transparent coupling-out layer ( 22 ), which preferably essentially consists of GaP, is arranged on the topmost cladding layer ( 20 ) of the layer structure.

16. The radiation-emitting semiconductor component as claimed in claim 1 , wherein

the active layer ( 14 ) comprises a p-n junction, a single quantum well structure or a multiple quantum well structure.