IP Library › Granted Patent US 6,384,482
Granted Patent Utility
US 6,384,482 · Confirmation No. 8498

METHOD FOR FORMING A DIELECTRIC LAYER IN A SEMICONDUCTOR DEVICE BY USING ETCH STOP LAYERS

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 Code Description Pages PDF
2001-08-15 TRNA Transmittal of New Application 3 View
2001-08-15 SPEC Specification 7 View
2001-08-15 CLM Claims 3 View
2001-08-15 ABST Abstract 1 View
2001-08-15 DRW Drawings-only black and white line drawings 2 View
2001-08-15 OATH Oath or Declaration filed 3 View
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Quick Facts
Patent No.
US 6,384,482
App. No.
09/929,098
Filed
2001-08-15
Granted
2002-05-07
Pub. No.
US20020055202A1
Art Unit
2814
PTA
0 days