Patent Application
Utility
App. No. 09/939,458
· Confirmation No. 3657
Semiconductor device of STI structure and method of fabricating MOS transistors having consistent threshold voltages
Abandoned -- Failure to Respond to an Office Action
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2004-03-12 | ABN |
Abandonment | 2 | View | |
| 2001-08-24 | TRNA |
Transmittal of New Application | 2 | View | |
| 2001-08-24 | SPEC |
Specification | 10 | View | |
| 2001-08-24 | CLM |
Claims | 4 | View | |
| 2001-08-24 | ABST |
Abstract | 1 | View | |
| 2001-08-24 | DRW |
Drawings-only black and white line drawings | 8 | View | |
| 2001-08-24 | OATH |
Oath or Declaration filed | 3 | View |
Inventors
Takayuki Watanabe
Shiga, JAPAN
Junji Kiyono
Shiga, JAPAN
Attorneys & Agents of Record
Classification
USPC
438/424
H10W10/014
H10W10/00
H10D84/0151
H10D84/038
H10D62/299
H10W10/17
H10W10/01
Prosecution
- Examiner
- MAI, ANH D
- Art Unit
- 2814
- Customer No.
- 26304
- Docket No.
- NECM 18.946
- Confirmation No.
- 3657
Foreign Priority
2000-256591
·
2000-08-28
·
JAPAN
Publication
- Pub. No.
- US20020031890A1
- Pub. Date
- 2002-03-14
No related applications found.
from
NEC CORPORATION
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2003-02-19
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2001-08-24
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Quick Facts
- App. No.
- 09/939,458
- Filed
- 2001-08-24
- Pub. No.
- US20020031890A1
- Examiner
- MAI, ANH D
- Art Unit
- 2814
External Links