Method for forming an inductor

1. A method of fabricating an inductor having an inductance comprising:

selecting a substrate;

depositing a first layer of magnetic material on a surface of the substrate;

depositing a first insulating layer on a surface of the first magnetic material layer;

forming a single inductor pattern on a surface of the first insulating layer, the single inductor pattern formed substantially on a single plane, the single inductor pattern formed from gold;

depositing a second insulating layer on a surface of the single inductor pattern, the second insulating layer encapsulating the single inductor pattern; and

depositing a second magnetic material layer on a surface of the second insulating layer, the second magnetic material layer being deposited to a particular thickness to control the inductance, wherein the single inductive pattern is configured to inductively interact with at most the first layer of magnetic material and the second magnetic material layer to confine a magnetic field generated by the single inductor pattern.

2. The method of claim 1 , wherein the substrate is a semiconductor.

3. The method of claim 1 , wherein the first layer of magnetic material is a ferromagnetic.

4. The method of claim 1 , wherein the first insulating layer is silicon dioxide.

5. The method of claim 1 , wherein the inductor pattern is a square spiral.

6. The method of claim 1 , wherein the inductor pattern is a high-conductivity material.

7. A method of fabricating an inductor having an inductance comprising:

selecting a substrate having a surface;

depositing a first layer of magnetic material to a particular thickness on the surface of the substrate to control the inductance;

depositing a first insulating layer on a surface of the first magnetic material layer;

forming a single inductor pattern on a surface of the first insulating layer, the single inductor pattern formed substantially on a single plane, the single inductor pattern formed from gold;

depositing a second insulating layer on a surface of the single inductor pattern, the second insulating layer encapsulating the single inductor pattern; and

depositing a second magnetic material layer on a surface of the second insulating layer, wherein the single inductor pattern inductively interacts with at most the first layer of magnetic material and the second magnetic material layer to confine a magnetic field generated by the single inductor pattern.

8. The method of claim 7 , wherein the substrate comprises a semiconductor.

9. The method of claim 7 , wherein the first layer of magnetic material comprises a ferromagnetic material.

10. The method of claim 9 , where the ferromagnetic material comprise NiFe.

11. The method of claim 7 , wherein the first insulating layer comprises silicon dioxide.

12. The method of claim 7 , wherein the inductor pattern comprises a triangular spiral.