IP Library › Granted Patent US 6,887,396
Granted Patent B2
US 6,887,396 · App. 09/950,710 · Granted May 3, 2005

Micromirror unit and method of making the same

Assignees: Fijitsu Limited; Fujitsu Media Devices Limited
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,887,396
App. No.
09/950,710
Granted
May 3, 2005
Kind
B2
Abstract

A method is provided for making a micromirror unit which includes a frame, a mirror forming base, and bridges connecting the frame to the mirror forming base. The method includes the following steps. First, a first mask pattern is formed on a substrate for masking portions of the substrate which are processed into the frame and the mirror forming base. Then, a second mask pattern is formed on the substrate for masking portions of the substrate which are processed into the bridges. Then, the substrate is subjected to a first etching process with the first and the second mask patterns present as masking means. Then, the second mask pattern is removed selectively. Then, the substrate is subjected to a second etching process with the first mask pattern present as masking means. Finally, the first mask pattern is removed.

Claims (16)

1. A method of making a micromirror unit, the unit comprising a frame, a mirror forming base, and bridges connecting the frame to the mirror forming base, the bridges including torsion bars, the method comprising the steps of:

forming a first mask pattern on a substrate for masking portions of the substrate which are processed into the frame and the mirror forming base;

forming a second mask pattern on the substrate for masking portions of the substrate which are processed into the bridges, the second mask pattern differing in material and anti-etching properties from the first mask pattern;

subjecting the substrate to a first etching process with the first and the second mask patterns present as masking means;

removing the second mask pattern selectively by using an enchant which etches away only the second mask pattern but not the first mask pattern;

subjecting the substrate to a second etching process with the first mask pattern present as masking means; and

removing the first mask pattern.

2. The method according to claim 1 , wherein the bridges include support beams in addition to the torsion bars.

3. The method according to claim 1 , wherein the first etching process is continued until material removal progresses halfway into the substrate in a thickness direction of the substrate, the second etching progress being performed for material removal, so that the frame and the mirror forming base are connected to each other via the bridges only.

4. The method according to claim 1 , wherein one of the first and the second etching process employs Deep RIE.

5. A method of making a micromirror unit, the unit comprising a mirror forming base, an inner frame surrounding the mirror forming base, an outer frame surrounding the inner frame, first torsion bars connecting the mirror forming base to the inner frame, and second torsion bars connecting the inner frame to the outer frame, the method comprising the steps of:

preparing a substrate which includes a first conductive layer, a second conductive layer, and an intermediate insulating layer interposed between the first and second conductive layers;

etching the first conductive layer of the substrate in a manner such that material removal from the first conductive layer terminates short of the insulating layer at portions corresponding to the first and second torsion bars while reaching the insulating layer at selected portions other than the first and second torsion bars;

etching the second conductive layer in a manner such that material removal from the second conductive layer terminates short of the insulating layer at portions corresponding to the second torsion bars while reaching the insulating layer at portions corresponding to the first torsion bars and at other selected portions excepting the second torsion bars; and

etching away the insulating layer at the first torsion bars and at other selected portions excepting the second torsion bars.

6. The method according to claim 5 , wherein the etching of the first and second conductive layers employs Deep RIE.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 30, 2016
From: FUJITSU LIMITED
To: DRNC HOLDINGS, INC.
Reel/Frame 038139/0578 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 7, 2007
From: FUJITSU MEDIA DEVICES LIMITED (FMD)
To: FUJITSU LIMITED
Reel/Frame 019805/0099 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEES ADDRESS PREVIOUSLY RECORDED AT REEL 012171 FRAME 0429. Recorded Dec 28, 2001
From: TSUBOI, OSAMU; UEDA, SATOSHI; MIZUNO, YOSHIHIRO; SAWAKI, IPPEI; YAMAGISHI, FUMIO
To: FUJITSU LIMITED; FUJITSU MEDIA DEVICES LIMITED
Reel/Frame 012409/0112 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 13, 2001
From: TSUBOI, OSAMU; UEDA, SATOSHI; MIZUNO, YOSHIHIRO; SAWAKI, IPPEI; YAMAGISHI, FUMIO
To: FUJITSU LIMITED; FUJITSU MEDIA DEVICES LIMITED
Reel/Frame 012171/0429 →
Priority Claims (1)
JP 2001-129596 · Apr 26, 2001 · national
Continuity (1)
Related Publication 20020159170A1 · Oct 31, 2002