IP Library › Granted Patent US 6,552,931
Granted Patent Utility
US 6,552,931 · Confirmation No. 4609

LOW VOLTAGE FLASH EEPROM MEMORY CELL WITH IMPROVED DATA RETENTION

Patented Case View Patent ↗ View Publication ↗
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 Code Description Pages PDF
2005-01-14 COCIN Request for Certificate of Correction 4 View
2001-09-20 TRNA Transmittal of New Application 3 View
2001-09-20 A.PE Preliminary Amendment 5 View
2001-09-20 SPEC Specification 19 View
2001-09-20 CLM Claims 12 View
2001-09-20 ABST Abstract 1 View
2001-09-20 DRW Drawings-only black and white line drawings 7 View
2001-09-20 OATH Oath or Declaration filed 13 View
2001-09-20 LET. Miscellaneous Incoming Letter 2 View
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Quick Facts
Patent No.
US 6,552,931
App. No.
09/957,124
Filed
2001-09-20
Granted
2003-04-22
Pub. No.
US20020015327A1
Examiner
HO, HOAI V
Art Unit
2818
PTA
-151 days