IP Library Granted Patent US 6,878,448
Granted Patent B2
US 6,878,448 · App. 09/961,746 · Granted Apr 12, 2005

Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same

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Quick Facts
Patent No.
US 6,878,448
App. No.
09/961,746
Granted
Apr 12, 2005
Kind
B2
Abstract

The present invention provides a biphenyl based epoxy resin comprising a curing agent and an inorganic filler containing an alkali alkaline earth metal oxide wherein the epoxy resin has a variation rate of hardness at 25° C. and a relative humidity of 50% for 72 hours of less than 10% and a variation rate of flow at 25° C. and a relative humidity of 20% or below for 72 hours of less than 20%.

Claims (118)

1. An epoxy resin composition comprising:

a biphenyl based epoxy resin;

a curing agent; and

an inorganic filler containing an alkaline earth metal oxide;

wherein said inorganic filler contains calcium oxide.

2. The epoxy resin composition of claim wherein said calcium oxide is formulated in an amount of from 0.5 wt % to 50 wt % relative to said curing agent.

3. The epoxy resin composition of claim 1 wherein said inorganic filler contains at least 78 vol % silica and further contains calcium metaborate.

4. An epoxy resin composition comprising a biphenyl based epoxy resin, a phenolic curing agent) and an inorganic filler containing calcium oxide;

wherein said epoxy resin composition exhibits a less than 10% variation rate of hardness at 25° C. and a relative humidity of 50% for 72 hours, and a less than 20% variation rate of flow at 25° C. and a relative humidity of 20% or below for 72 hours.

5. The epoxy resin composition of claim 4 wherein a ratio of hydroxyl groups of said phenolic curing agent and epoxy groups of said biphenyl based epoxy resin is about 1.3 to 1.5.

6. An epoxy resin composition comprising:

a biphenyl based epoxy resin;

a curing agent; and

an inorganic filler containing at least 78 vol % silica and further containing calcium metaborate and an alkaline earth metal oxide.

7. An epoxy resin composition comprising:

a biphenyl based epoxy resin;

a curing agent; and

an inorganic filler containing an alkaline earth metal oxide, said inorganic filler further comprising at least 78 vol % silica and calcium metaborate;

wherein said epoxy resin composition has a variation rate of hardness at 25° C. and a relative humidity of 50% for 72 hours of less than 10% and a variation rate of flow at 25° C. and a relative humidity of 20% or below for 72 hours of less than 20%.

8. An epoxy resin composition comprising:

a biphenyl based epoxy resin; and

an inorganic filler comprising calcium oxide;

wherein said epoxy resin composition has a variation rate of hardness at 25° and a relative humidity of 50% for 72 hours of less than 10% and a variation rare of flow at 25° C. and a relative humidity of 20% or below fix 72 hours of less than 20%.

9. The epoxy resin composition of claim 8 , wherein said epoxy resin composition further comprises a curing agent, and said calcium oxide is provided in an amount of from 0.5 wt % to 50 wt % relative to said curing agent.

10. An epoxy resin composition comprising:

a biphenyl based epoxy resin; and

an inorganic filler containing an alkaline earth metal oxide, said inorganic filler further comprising at least 78 vol % silica and calcium metaborate;

wherein said epoxy resin composition has a variation rate of hardness at 25° C. and a relative humidity of 50% for 72 hours of less than 10% and a variation rate of flow at 25° C. and a relative humidity of 20% or below for 72 hours of less than 20%.

11. An epoxy resin composition comprising:

a biphenyl based epoxy resin;

a curing agent; and

an inorganic filler containing an alkaline earth metal oxide, said inorganic filler further comprising calcium oxide;

wherein said epoxy resin composition has a variation rate of hardness at 25° C. and a relative humidity of 50% for 72 hours of less than 10% and a variation rate of flow at 25° C. and a relative humidity of 20% or below for 72 hours of less than 20%.

12. The epoxy resin composition of claim 11 , wherein said calcium oxide is formulated in an amount of from 0.5 wt % to 50 wt % relative to said curing agent.

13. The epoxy resin composition of claim 11 , wherein said curing agent is a phenolic resin.

14. The epoxy resin composition of claim 13 , wherein a ratio of hydroxyl groups of said phenolic resin and epoxy groups of said biphenyl based epoxy resin is about 1.3 to 1.5.

15. An epoxy resin composition comprising:

a biphenyl based epoxy resin;

a curing agent comprising a phenolic resin; and

an inorganic filler containing an alkaline earth metal oxide, said inorganic filler further comprising at least 78 vol % silica and calcium metaborate;

wherein said epoxy resin composition has a variation rate of hardness at 25° C. and a relative humidity of 50% for 72 hours of less than 10% and a variation rate of flow at 25° C. and a relative humidity of 20% or below for 72 hours of less than 20%.

16. The epoxy resin composition of claim 15 , wherein a ratio of hydroxyl groups of said phenolic resin and epoxy groups of said biphenyl based epoxy resin is about 1.3 to 1.5.

17. A semiconductor device encapsulated with an epoxy resin said epoxy resin having a composition comprising:

a biphenyl based epoxy resin;

a curing agent; and

an inorganic filler containing an alkaline earth metal oxide;

wherein said inorganic filler contains calcium oxide.

18. The device of claim 17 wherein said calcium oxide is formulated in an amount of from 0.5 wt % to 50 wt % relative to said curing agent.

19. The device of claim 17 wherein said inorganic filler contains at least 78 vol % silica and further contains calcium metaborate.

20. A semiconductor device encapsulated with an epoxy resin composition, said epoxy resin composition comprising a biphenyl based epoxy resin, a phenolic curing agent, and an inorganic filler containing calcium oxide;

wherein said epoxy resin composition exhibits a less than 10% variation rate of hardness at 25° C. and a relative humidity of 50% for 72 hours, and a less than 20% variation rate of flow at 25° C. and a relative humidity of 20% or below for 72 hours.

21. The semiconductor device of claim 20 wherein a ratio of hydroxyl groups of said phenolic curing agent and epoxy groups of said biphenyl based epoxy resin is about 1.3 to 1.5.

22. The semiconductor device of claim 20 wherein said calcium oxide is formulated in an amount of from 0.5 wt % to 50 wt % relative to a curing agent.

23. The semiconductor device of claim 22 wherein a ratio of hydroxyl groups of said phenolic resin and epoxy groups of said biphenyl based epoxy resin is about 1.3 to 1.5.

24. A semiconductor device encapsulated with an epoxy resin said epoxy resin having a composition comprising:

a biphenyl based epoxy resin;

a curing agent; and

an inorganic filler containing at least 78 vol % silica and further containing calcium metaborate and an alkaline earth metal oxide.

25. A semiconductor device encapsulated with an epoxy resin said epoxy resin having a composition comprising:

a biphenyl based epoxy resin;

a curing agent; and

an inorganic filler containing an alkaline earth metal oxide, said inorganic filler further comprising at least 78 vol % silica and calcium metaborate;

wherein said epoxy resin composition has a variation rate of hardness at 25° C. and a relative humidity of 50% for 72 hours of less than 10% and a variation rate of flow at 25° C. and a relative humidity of 20% or below for 72 hours of less than 20%.

26. A semiconductor device encapsulated with an epoxy resin said epoxy resin having a composition comprising:

an inorganic filler comprising calcium oxide; and

a biphenyl based epoxy resin;

wherein said epoxy resin composition has a variation rate of hardness at 25° C. and a relative humidity of 50% for 72 hours of less than 10% and a variation rate of flow at 25° C. and a relative humidity of 20% or below for 72 hours of less than 20%.

27. The device of claim 26 wherein said epoxy resin composition further comprises a curing agent and said calcium oxide is provided in an amount of from 0.5 wt % to 50 wt % relative to said curing agent.

28. A semiconductor device encapsulated with an epoxy resin said epoxy resin having a composition comprising:

an inorganic filler containing an alkaline earth metal oxide, said inorganic filler further comprising at least 78 vol % silica and calcium metaborate; and

a biphenyl based epoxy resin;

wherein said epoxy resin composition has a variation rare of hardness at 25° C. and a relative humidity of 50% for 72 hours of less than 10% and a variation rare of flow at 25° C. and a relative humidity of 20% or below for 72 hours of less than 20%.

29. A semiconductor device encapsulated with an epoxy resin said epoxy resin having a composition comprising:

a biphenyl based epoxy resin;

a curing agent; and

an inorganic filler containing calcium oxide;

wherein said epoxy resin composition has a variation rate of hardness at 25° C. and a relative humidity of 50% for 72 hours of less than 10% and a variation rate of flow at 25° C. and a relative humidity of 20% or below for 72 hours of less than 20%.

30. The device of claim 29 , wherein said calcium oxide is formulated in an amount of from 0.5 wt % to 50 wt % relative to said curing agent.

31. A method of fabricating an epoxy resin composition comprising the steps of:

providing a biphenyl based epoxy resin;

filling said biphenyl based epoxy resin with an inorganic filler containing an alkaline earth metal oxide; and

curing said biphenyl based epoxy resin with a curing agent;

wherein said inorganic filler contains calcium oxide.

32. The method of claim 31 wherein said calcium oxide is formulated in an amount of from 0.5 wt % to 50 wt % relative to said curing agent.

33. The method of claim 31 wherein said inorganic filler contains at least 78 vol % silica and further contains calcium metaborate.

34. A method of fabricating an epoxy resin composition comprising the steps of:

providing a biphenyl based epoxy resin;

filling said biphenyl based epoxy resin with an inorganic filler containing at least 78 vol % silica and further containing calcium metaborate and an alkaline earth metal oxide; and

curing said filled biphenyl based epoxy resin with a curing agent.

35. A method of fabricating an epoxy resin composition comprising the steps of:

providing a biphenyl based epoxy resin; and

filling said biphenyl based epoxy resin with an inorganic filler containing calcium oxide;

wherein said epoxy resin composition has a variation rate of hardness at 25° C. and a relative humidity of 50% for 72 hours of less than 10% and a variation rate of flow at 25° C. and a relative humidity of 20% or below for 72 hours of less than 20%.

36. A method of fabricating an epoxy resin composition comprising the steps of:

providing a biphenyl based epoxy resin;

filling said biphenyl based epoxy resin with an inorganic filler containing an alkaline earth metal oxide, said inorganic filler further comprising at least 78 vol % silica and calcium metaborate; and

wherein said epoxy resin composition has a variation rare of hardness at 25° C. and a relative humidity of 50% for 72 hours of less than 10% and a variation rate of flow at 25° C. and a relative humidity of 20% or below for 72 hours of less than 20%.

37. A method of fabricating an epoxy resin composition comprising the steps of:

providing a biphenyl based epoxy resin filling said biphenyl based epoxy resin with an inorganic filler containing calcium oxide; and

curing said filled biphenyl based epoxy resin with a curing agent;

wherein said epoxy resin combination has a variation rate of hardness at 25° C. and a relative humidity of 50% for 72 hours of less than 10% and a variation rate of flow at 25° C. and a relative humidity of 20% or below for 72 hours of less than 20%.

38. The method of claim 37 wherein said calcium oxide is formulated in an amount of from 0.5 wt % to 50 wt % relative to said curing agent.

39. The method of claim 37 wherein said curing agent is a phenolic resin.

40. The method of claim 39 wherein a ratio of hydroxyl groups of said phenolic resin and epoxy groups of said biphenyl based epoxy resin is about 1.3 to 1.5.

41. The method of claim 37 wherein said inorganic filler contains at least 78 vol % silica and further contains calcium metaborate.

42. A method of fabricating an epoxy resin composition comprising the steps of:

providing a biphenyl based epoxy resin;

filling said biphenyl based epoxy resin with an inorganic filler containing an alkaline earth metal oxide, said inorganic filler further comprising calcium oxide;

curing the filled biphenyl based epoxy resin with a curing agent; and

wherein said epoxy resin composition has a variation rate of hardness at 25° C. and a relative humidity of 50% for 72 hours of less than 10% and a variation rate of flow at 25° C. and a relative humidity of 20% or below for 72 hours of less than 20%.

43. The method of claim 42 , wherein said calcium oxide is formulated in an amount of from 0.5 wt % to 50 wt % relative to said curing agent.

44. The method of claim 42 , wherein said curing agent is a phenolic resin.

45. The method of claim 44 wherein a ratio of hydroxyl groups of said phenolic resin and epoxy groups of said biphenyl based epoxy resin is about 1.3 to 1.5.

46. A method of fabricating an epoxy resin composition comprising the steps of:

providing a biphenyl based epoxy resin;

filling said biphenyl based epoxy resin with an inorganic filler containing an alkaline earth metal oxide, said inorganic filler further comprising at least 78 vol % silica and calcium metaborate;

curing the filled biphenyl based epoxy resin with a curing agent; and

wherein said epoxy resin composition has a variation rate of hardness at 25° C. and a relative humidity of 50% for 72 hours of less than 10% and a variation rate of flow at 25° C. and a relative humidity of 20% or below for 72 hours of less than 20%.

Assignments (3)
MERGER AND CHANGE OF NAME Recorded Jul 29, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024755/0338 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 26, 2003
From: HITACHI, LTD.
To: RENESAS TECHNOLOGY CORPORATION
Reel/Frame 014547/0428 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 25, 2001
From: ISHII, TOSHIAKI; KOKAKU, HIROYOSHI; NAGAI, AKIRA; MIWA, TAKAO
To: HITACHI, LTD.
Reel/Frame 012202/0538 →