Field effect transistor
View Patent ↗A MOS field effect transistor. A field relaxation layer of a gate overlap structure is disposed in contact with a drain region for the purpose of relaxation of the electric field by increasing a distance between the field relaxation layer and a high-density layer. The electric field relaxation can further be promoted because the equipotential lines are bent by a gate insulation film. A punch-through stopper layer of a gate overlap structure is disposed in contact with a source region for suppressing spreading of a depletion layer toward the source region. The length of a gate electrode can be realized in a miniaturized size.
1. A field effect transistor, comprising:
a semiconductor substrate of a first conductivity type;
a gate insulation film formed on said semiconductor substrate;
a gate electrode formed on said gate insulation film;
a source electrode and a drain electrode formed at lateral sides, respectively, of said gate electrode;
a source region of a second conductivity type which is in contact with said source electrode;
a drain region of the second conductivity type which is in contact with said drain electrode;
a punch-through stopper layer of the first conductivity type formed in contact with said source region at a location deeper than a junction between said source region of the second conductivity type and said semiconductor substrate of the first conductivity type in such a gate overlap structure that said punch-through layer penetrates from beneath an end face of said gate insulation film adjacent to said source electrode toward said drain electrode in contact with said gate insulation film; and
a field relaxation layer of the second conductivity type formed in contact with said drain region in such a gate overlap structure in which said field relaxation layer penetrates from beneath an end face of said gate insulation film adjacent to said drain electrode toward said source electrode in contact with said gate insulation film;
wherein a high-density layer of the second conductivity type which is in contact with said source electrode and a high-density layer of the second conductivity type which is in contact with said drain electrode are disposed at both sides, respectively, of said gate electrode without being in contact with said gate insulation film.
2. A field effect transistor according to claim 1 ,
wherein said field relaxation layer penetrates from beneath an end face of a gate electrode side wall toward said source electrode for a distance of at least 0.15 μm.
3. A field effect transistor according to claim 1 ,
further comprising:
a layer of the first conductivity type formed on a surface of the field relaxation layer of the second conductivity type and/or alternatively a drain region of the second conductivity type.
4. A field effect transistor according to claim 1 ,
further comprising:
an impurity layer of the first conductivity type or alternatively the second conductivity type formed on a surface of said semiconductor substrate extending beneath said gate insulation film.
5. A field effect transistor, comprising:
a semiconductor substrate of a first conductivity type;
a gate insulation film formed on said semiconductor substrate;
a gate electrode formed on said gate insulation film;
a source electrode and a drain electrode formed at lateral sides, respectively, of said gate electrode;
a source region of a second conductivity type which is in contact with said source electrode;
a drain region of the second conductivity type which is in contact with said drain electrode; and
a field relaxation layer of the second conductivity type formed in contact with said drain region in such a gate overlap structure that said field relaxation layer extends from beneath an end face of said gate insulation film adjacent to said drain electrode toward said source electrode in contact with said gate insulation film;
wherein said field relaxation layer penetrates from beneath an end face of a gate electrode side wall toward said source electrode for a distance of at least 0.15 μm.