Method of and apparatus for chemical mechanical polishing and slurry supplying device
View Patent ↗The distribution and size distribution of polishing particles contained in a slurry to be supplied to a polishing unit are measured by a measuring machine. Polishing speed with respect to a wafer is controlled to be constant by controlling a physical quantity such as the rotation speed of a polishing surface plate, the rotation speed of a polishing head or the pressurizing force of the polishing head based on the measurement result.
1. A method of chemical mechanical polishing comprising:
supplying a slurry including polishing particles to a polishing apparatus including a polisher and an object to be polished;
measuring particle information, including at least one of dispersion of the polishing particles and distribution of particle sizes of the polishing particles, of the slurry that is directly supplied to the object in the polishing apparatus; and
controlling polishing speed at which the object is being polished, based on the particle information by adjusting at least one of rotation speed of the polisher, rotation speed of the object, and force applied by the polisher to the object.
2. The method according to claim 1 including supplying a mixture of a first slurry and a second slurry to the polishing apparatus as the slurry directly supplied to the object.
3. The method according to claim 2 including controlling mixing ratio between the first slurry and the second slurry based on the particle information.
4. The method according to claim 3 , further comprising: detecting the polishing speed at which the object is being polished; and controlling the mixing ratio based on the polishing speed.