Patent Assignment
Reel/Frame 014502/0289
Assignment of Assignor's Interest
Recorded: 2003-09-10
Received: 2003-09-15
Pages: 13
Assignor
MITSUBISHI DENKI KABUSHIKI KAISHA
Executed: 2003-09-08
Assignee
RENESAS TECHNOLOGY CORP.
4-1, MARUNOUCHI 2-CHOME, CHIYODA-KU, TOKYO, JPX, 100-6334, JAPAN
Covered Properties
(100)
Non-volatile semiconductor memory device
Application:
10/614,108 →
Semiconductor device, terminal device and communication method
Application:
10/607,030 →
Semiconductor substrate, seminconductor device, and manufacturing method thereof
Application:
10/602,673 →
Semiconductor Device with a Metal Insulator Semiconductor Transistor
Application:
10/600,344 →
Method of Manufacturing Structure for Connecting Interconnect Lines Including Metal Layer with Thickness Larger Than Thickness of Metallic Compound Layer
Application:
10/464,502 →
Quality control method and system on production line for fabricating products
Application:
10/464,769 →
Automatic Actuation of Device According to Uv Intensity
Application:
10/453,599 →
Semiconductor Device with a Fluorinated Silicate Glass Film as an Interlayer Metal Dielectric Film, and Manufacturing Method Thereof
Application:
10/446,876 →
Memory Device Having Wide Margin of Data Reading Operation, for Storing Data by Change in Electric Resistance Value
Application:
10/446,872 →
Thin Film Magnetic Memory Device and Semiconductor Integrated Circuit Device Including the Same as One of Circuit Blocks
Application:
10/441,016 →
Method of Fabricating Semiconductor Device Comprising Superposition Inspection Step
Application:
10/437,911 →
Low-Power Consumption Semiconductor Memory Device
Application:
10/437,281 →
Microcomputer
Application:
10/431,496 →
A Semiconductor Device Having an Soi Substrate
Application:
10/431,473 →
Semiconductor device, manufacturing method thereof, and semiconductor manufacturing system
Application:
10/428,042 →
Semiconductor Device Having Internal Voltage Generated Stably
Application:
10/427,968 →
Socket
Application:
10/426,658 →
Semiconductor Device and Method of Manufacturing the Same
Application:
10/423,960 →
Semiconductor Device Having Mechanism Capable of High-Speed Operation
Application:
10/424,104 →
Semiconductor Device with Dummy Patterns
Application:
10/419,770 →
Semiconductor Memory Device Producible with Incorporated Memory Switched from Ram to Rom
Application:
10/419,940 →
Thin Film Magnetic Memory Device with Memory Cell Having Magnetic Tunnel Junction
Application:
10/412,589 →
System-In-Package Type Semiconductor Device
Application:
10/411,271 →
Microcomputer, Has Selection Circuit to Select Either Testing-Purpose Interrupt Request Signal or Interrupt Request Selection Signal Based on Delayed Selection Signal, Where Selected Signals Are Sent to Interrupt Controller
Application:
10/411,222 →
Nonvolatile Memory Device with Configuration Switching the Number of Memory Cells Used for One-Bit Data Storage
Application:
10/410,134 →
Semiconductor Memory Device Operating with Low Current Consumption
Application:
10/409,120 →
Semiconductor Memory Device with Power Consumption Reduced in Non-Data-Access
Application:
10/409,593 →
In-Circuit Emulator System with Changeable Clock Frequency
Application:
10/409,579 →
Low Power Consumption Mis Semiconductor Device
Application:
10/409,585 →
Semiconductor Memory Device Invalidating Improper Control Command
Application:
10/408,575 →
Semiconductor Device
Application:
10/408,582 →
Semiconductor device
Application:
10/406,289 →
Semiconductor device manufacturing method and semiconductor device
Application:
10/406,236 →
Method of manufacturing interconnection structure applied to semiconductor device
Application:
10/406,184 →
Semiconductor Circuit Device with Mitigated Load on Interconnection Line
Application:
10/406,461 →
Power on Reset Circuit
Application:
10/406,312 →
Semiconductor Device Manufacturing Method and Electronic Equipment Using Same
Application:
10/405,462 →
Layout Device
Application:
10/404,062 →
Non-Volatile Semiconductor Memory Device Capable of Rapid Operation
Application:
10/404,137 →
Semiconductor Memory Device with High-Speed Sense Amplifier
Application:
10/403,009 →
Storage Device Managing Nonvolatile Memory by Converting Logical Address to Physical Address of Nonvolatile Memory
Application:
10/400,463 →
Mask Data Processor
Application:
10/397,520 →
Nonvolatile Semiconductor Memory Device Allowing High Speed Data Transfer
Application:
10/397,265 →
Semiconductor Memory Device with Circuit Executing Burn-in Testing
Application:
10/397,211 →
Thin Film Magnetic Memory Device Storing Program Information Efficiently and Stably
Application:
10/396,481 →
Current Drive Circuit Avoiding Effect of Voltage Drop Caused by Load and Semiconductor Memory Device Equipped Therewith
Application:
10/396,414 →
Inductance Measuring Method
Application:
10/396,350 →
Integrated Circuit Chip Module
Application:
10/395,382 →
Program Counter Circuit
Application:
10/394,268 →
Level Determination Circuit Determining Logic Level of Input Signal
Application:
10/394,276 →
Semiconductor Memory Device Achieving Fast Random Access
Application:
10/392,842 →
Device for Measuring Temperature of Semiconductor Integrated Circuit
Application:
10/391,592 →
Semiconductor Manufacturing Line Monitoring System
Application:
10/390,918 →
Semiconductor Circuit Device Adaptable to Plurality of Types of Packages
Application:
10/390,886 →
Geometry processor capable of executing input/output and high speed geometry calculation processing in parallel
Application:
10/391,253 →
Semiconductor Device with Bus Terminating Function
Application:
10/391,021 →
Non-Volatile Semiconductor Memory Device Allowing Shrinking of Memory Cell
Application:
10/389,753 →
Semiconductor Device Saving Data in Non-Volatile Manner During Standby
Application:
10/390,027 →
Semiconductor Device
Application:
10/389,958 →
Semiconductor Device Having Complementary Mos Transistor
Application:
10/390,024 →
Semiconductor Device
Application:
10/388,624 →
Nonvolatile semiconductor memory and programming methods thereof
Application:
10/388,633 →
Semiconductor Device Manufacturing Line
Application:
10/388,632 →
Thin Film Magnetic Memory Device Capable of Stably Writing/Reading Data and Method of Fabricating the Same
Application:
10/387,536 →
Semiconductor Memory Device with Clock Generating Circuit
Application:
10/387,503 →
Semiconductor Memory Device with Improved Flexible Redundancy Scheme
Application:
10/387,573 →
Semiconductor Memory Device, Nonvolatile Memory Device and Magnetic Memory Device Provided with Memory Elements and Interconnections
Application:
10/387,540 →
Device Inspecting for Defect on Semiconductor Wafer Surface
Application:
10/386,558 →
Semiconductor Device Manufacturing Method
Application:
10/384,589 →
Semiconductor Device Mounting Chip Having Tracing Function
Application:
10/384,742 →
Method of Manufacturing Semiconductor Device
Application:
10/384,572 →
Thin Film Magnetic Memory Device Suppressing Resistance of Transistors Present in Current Path
Application:
10/384,741 →
Variable Gain Amplifier with a Gain Exhibiting a Linear in Db Characteristic Relative to a Control Voltage
Application:
10/383,568 →
Mosfet with Graded Gate Oxide Layer
Application:
10/383,753 →
Semiconductor memory device having a low potential body section
Application:
10/383,578 →
Semiconductor Package
Application:
10/383,734 →
Thin Film Magnetic Memory Device Executing Self-Reference Type Data Read
Application:
10/383,570 →
Semiconductor Device Including a Plurality of Interconnection Layers, Manufacturing Method Thereof and Method of Designing Semiconductor Circuit Used in the Manufacturing Method
Application:
10/382,902 →
Semiconductor Circuit Device Capable of Accurately Testing Embedded Memory
Application:
10/383,289 →
Static Type Semiconductor Memory Device
Application:
10/383,051 →
Semiconductor Device
Application:
10/382,497 →
Automatic Gain Control Circuit Controlling Gain of Receiver Including Two Automatic Gain Control Amplifiers
Application:
10/378,964 →
Stacked Semiconductor Device Structure
Application:
10/377,639 →
Semiconductor Memory Device with Test Mode and Testing Method Thereof
Application:
10/377,596 →
Semiconductor Device
Application:
10/378,085 →
Semiconductor Device with Element Isolation Using Impurity-Doped Insulator and Oxynitride Film
Application:
10/377,829 →
Semiconductor Device with Clock Generation Circuit
Application:
10/377,738 →
Semiconductor Device with Stacked Semiconductor Elements
Application:
10/376,269 →
Semiconductor Device
Application:
10/375,125 →
Non-Volatile Semiconductor Memory Device Suppressing Write-Back Fault
Application:
10/374,971 →
Flash storage medium having a NAND-type flash memory
Application:
10/374,130 →
Strobe Light Control Circuit and Igbt Device
Application:
10/373,873 →
Automatic Placement and Routing Apparatus Automatically Inserting a Capacitive Cell
Application:
10/374,059 →
Memory System Allowing Fast Operation of Processor While Using Flash Memory Incapable of Random Access
Application:
10/372,099 →
Semiconductor Memory Device Storing Redundant Replacement Information with Small Occupation Area
Application:
10/372,284 →
Semiconductor Device Including Multiple Field Effects, with First Fets Having Oxide Spacers and the Second Fets Having Oxide Nitride Oxidation Protection
Application:
10/370,762 →
Semiconductor Device
Application:
10/370,657 →
Semiconductor Device Including Nitride Layer
Application:
10/370,530 →
Semiconductor Device Having a Capacitor and Method of Manufacturing the Same
Application:
10/370,711 →
Semiconductor Device Having Mim Structure Capacitor
Application:
10/369,636 →