IP Library › Granted Patent US 6,621,148
Granted Patent Utility
US 6,621,148 · Confirmation No. 7405

METHODS OF FABRICATING GALLIUM NITRIDE SEMICONDUCTOR LAYERS ON SUBSTRATES INCLUDING NON-GALLIUM NITRIDE POSTS, AND GALLIUM NITRIDE SEMICONDUCTOR STRUCTURES FABRICATED THEREBY

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2020-11-30 OATH Oath or Declaration filed 14 View
2003-07-17 IFEE Issue Fee Payment (PTO-85B) 1 View
2001-10-09 TRNA Transmittal of New Application 2 View
2001-10-09 A.PE Preliminary Amendment 2 View
2001-10-09 SPEC Specification 11 View
2001-10-09 CLM Claims 7 View
2001-10-09 ABST Abstract 1 View
2001-10-09 DRW Drawings-only black and white line drawings 2 View
2001-10-09 OATH Oath or Declaration filed 4 View
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Quick Facts
Patent No.
US 6,621,148
App. No.
09/973,383
Filed
2001-10-09
Granted
2003-09-16
Pub. No.
US20020022287A1
Art Unit
2826
PTA
-90 days