Granted Patent
Utility
US 6,423,562
· Confirmation No. 9081
CONTACT ELECTRODE FOR N-TYPE GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR AND METHOD FOR FORMING THE SAME
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⬇ PDF
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2001-10-23 | TRNA |
Transmittal of New Application | 2 | View | |
| 2001-10-23 | A.PE |
Preliminary Amendment | 13 | View | |
| 2001-10-23 | SPEC |
Specification | 17 | View | |
| 2001-10-23 | CLM |
Claims | 3 | View | |
| 2001-10-23 | ABST |
Abstract | 1 | View | |
| 2001-10-23 | DRW |
Drawings-only black and white line drawings | 4 | View | |
| 2001-10-23 | OATH |
Oath or Declaration filed | 3 | View |
Inventors
Masaaki Nido
Tokyo, JAPAN
Yukihiro Hisanaga
Tokyo, JAPAN
Attorneys & Agents of Record
Classification
USPC
438/48
H10D62/85
H10D64/0116
H10D62/8503
H10D64/62
Foreign Priority
9-4403
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1997-01-14
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JAPAN
Publication
- Pub. No.
- US20020020856A1
- Pub. Date
- 2002-02-21
Patent Term Adjustment
0days
CHANGE OF ADDRESS
Recorded 2017-11-29
from
NEC CORPORATION
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2013-07-12
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