Patent Assignment
Reel/Frame 030784/0197
Assignment of Assignor's Interest
Recorded: 2013-07-12
Pages: 5
Assignor
NEC CORPORATION
Executed: 2013-06-21
Assignee
RENESAS ELECTRONICS CORPORATION
1753, SHIMONUMABE, NAKAHARA-KU, KAWASAKI-SHI, KANAGAWA, 211-8668, JAPAN
Covered Properties
(45)
Method and Apparatus for Wet Treatment of Solid Surfaces
Patent:
5,578,193 →
Application:
08/501,431 →
Body Driven Soi-Mos Field Effect Transistor
Patent:
6,049,110 →
Application:
08/883,442 →
Compound Semiconductor Field-Effect Transistor with Improved Current Flow Characteristic
Patent:
6,121,641 →
Application:
08/941,202 →
Contact Electrode for N-Type Gallium Nitride-Based Compound Semiconductor and Method for Forming the Same
Capacitor Having a Ferroelectric Layer
Patent:
6,081,417 →
Application:
09/073,519 →
Method of Fabricating Semiconductor Device with Capacitor
Patent:
6,709,991 →
Application:
09/084,578 →
Field Effect Transistor and Method of Manufacturing Thereof
Patent:
6,194,747 →
Application:
09/162,355 →
Thin Film Capacitor Having an Improved Bottom Electrode and Method of Forming the Same
Patent:
6,218,233 →
Application:
09/185,586 →
Thin Film Capacitor Including Perovskite-Type Oxide Layers Having Columnar Structure and Granular Structure
Patent:
6,184,044 →
Application:
09/208,411 →
Planar-Type Avalanche Photodiode
Patent:
6,229,162 →
Application:
09/294,085 →
Body driven soi-mos field effect transistor and method of forming the same
Patent:
6,306,691 →
Application:
09/470,505 →
Solid State Imaging Device Having High Output Signal Gain
Patent:
6,580,063 →
Application:
09/523,343 →
Solid-State Imaging Device with Voltage Followers Formed by Selected Row Transistors and Column Transistors
Patent:
6,833,869 →
Application:
09/551,102 →
Solid-State Image Sensor and Method of Driving the Same
Patent:
6,410,900 →
Application:
09/563,208 →
Field Effect Transistor and Method of Manufacturing Thereof
Patent:
6,391,696 →
Application:
09/714,521 →
Thin film capacitor having an improved bottom electrode and method of forming the same
Soi Substrate and Method for Manufacturing the Same
Patent:
6,548,379 →
Application:
09/786,247 →
Compound Semiconductor Field Effect Transistor
Hetero-Junction Field Effect Transistor Having an Intermediate Layer
Contact Electrode for N-Type Gallium Nitride-Based Compound Semiconductor and Method for Forming the Same
Semiconductor Photodetector
High Power Photodiode
Feedback-Type Amplifier Circuit and Driver Circuit
Driver Circuit and Liquid Crystal Display Device
Method for Forming Group-Iii Nitride Semiconductor Layer and Group-Iii Nitride Semiconductor Device
Differential Circuit, Amplifier Circuit, Driver Circuit and Display Device Using Those Circuits
Thin Film Capacitor, Method for Manufacturing the Same and Printed Circuit Board Incorporating the Same
Electrode, Method for Producing Same and Semiconductor Device Using Same
Semiconductor Device with Silicide-Containing Gate Electrode and Method of Fabricating the Same
Porous Insulating Film, Method for Producing the Same, and Semiconductor Device Using the Same
Group-Iii Nitride Semiconductor Device
Differential Circuit, Amplifier Circuit, Driver Circuit and Display Device Using Those Circuits
Active Matrix Type Display Device and Driving Method Thereof
Semiconductor Device with Dual Damascene Wirings and Method for Manufacturing Same
Field Effect Transistor
Wiring Structure, Semiconductor Device and Manufacturing Method Thereof
Electrode, Method for Producing Same and Semiconductor Device Using Same
Formation Method of Porous Insulating Film, Manufacturing Apparatus of Semiconductor Device, Manufacturing Method of Semiconductor Device, and Semiconductor Device
Multilayered Wiring Structure, and Method for Manufacturing Multilayered Wiring
Field Effect Transistor with Reduced Gate Leakage Current
Iii-Nitride Semiconductor Field Effect Transistor
Field Effect Transistor and Method of Manufacturing the Same
Capacitor, Semiconductor Device Having the Same, and Method of Producing Them
Group Nitride Bipolar Transistor
Field Effect Transistor with Reduced Gate Leakage Current
Related Assignments
(17)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jun 26, 1997
From: KOH, RISHO
To: NEC CORPORATION
Reel/Frame 008670/0643 →
Assignment of Assignor's Interest
Sep 30, 1997
From: OHNO, YASUO
To: NEC CORPORATION
Reel/Frame 008755/0325 →
Assignment of Assignor's Interest
May 6, 1998
From: MATSUKI, TAKEO
To: NEC CORPORATION
Reel/Frame 009158/0878 →
Assignment of Assignor's Interest
May 26, 1998
From: KAWAHARA, JUN; SAITO, SHINOBU; MAEJIMA, YUKIHIKO; HAYASHI, YOSHIHIRO
To: NEC CORPORATION
Reel/Frame 009203/0247 →
Assignment of Assignor's Interest
Sep 29, 1998
From: ONDA, KAZUHIKO
To: NEC CORPORATION
Reel/Frame 010101/0931 →
Assignment of Assignor's Interest
Nov 4, 1998
From: TAKEMURA, KOICHI
To: NEC CORPORATION
Reel/Frame 009578/0508 →
Assignment of Assignor's Interest
Apr 5, 1999
From: SONE, SHUJI; KATO, YOSHITAKE
To: NEC CORPORATION
Reel/Frame 009865/0917 →
Assignment of Assignor's Interest
Apr 19, 1999
From: WATANABE, ISAO
To: NEC CORPORATION
Reel/Frame 009916/0478 →
Assignment of Assignor's Interest
Mar 10, 2000
From: OKAMOTO, FUYUKI
To: NEC CORPORATION
Reel/Frame 010664/0607 →
Assignment of Assignor's Interest
Apr 18, 2000
From: OKAMOTO, FUYUKI
To: NEC CORPORATION
Reel/Frame 010736/0217 →
Assignment of Assignor's Interest
May 2, 2000
From: OKAMOTO, FUYUKI
To: NEC CORPORATION
Reel/Frame 010780/0748 →
Assignment of Assignor's Interest
Mar 2, 2001
From: KATO, TAKEHIKO; OTA, KAZUKI; MIYAMOTO, HIRONOBU; IWATA, NAOTAKA
To: NEC CORPORATION
Reel/Frame 011586/0449 →
Assignment of Assignor's Interest
May 29, 2001
From: OGURA, ATSUSHI
To: NEC CORPORATION
Reel/Frame 011890/0404 →
Assignment of Assignor's Interest
Oct 4, 2001
From: ANDO, YUJI; MIYAMOTO, HIRONOBU; IWATA, NAOTAKA; MATSUNAGA, KOJI
To: NEC CORPORATION
Reel/Frame 012258/0984 →
Assignment of Assignor's Interest
Oct 30, 2001
From: TAKEUCHI, TAKESHI
To: NEC CORPORATION
Reel/Frame 012292/0729 →
Assignment of Assignor's Interest
Nov 9, 2001
From: TAKEUCHI, TAKESHI
To: NEC CORPORATION
Reel/Frame 012303/0195 →
Change of Address
Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →