III-nitride semiconductor field effect transistor
View Patent ↗Provided is a semiconductor device that can reduce the contact resistance, has a small current collapse, and can improve the pinch-off characteristic upon a high-frequency operation. A field effect transistor using a wurtzite (having (0001) as the main plane) type III-nitride semiconductor includes: a substrate ( 101 ); an undercoat layer ( 103 ) of a first III-nitride semiconductor; and a carrier travel layer ( 104 ) of a second III-nitride semiconductor. The undercoat layer ( 103 ) ( 101 ) and the carrier travel layer ( 104 ) is formed on the substrate in this order. The field effect transistor includes source/drain electrodes ( 105, 106 ) in ohmic contact, and a gate electrode ( 107 ) in Schottky contact directly or via another layer on the carrier travel layer ( 104 ). The undercoat layer ( 103 ) has an average lattice constant greater than that of the carrier travel layer ( 104 ) and a band gap greater than that of the carrier travel layer ( 104 ).
1. A field effect transistor comprising:
a substrate;
an undercoat layer of a first III-nitride semiconductor that is a wurtzite type being (0001) plane as a main plane on the substrate;
a carrier travel layer of a second III-nitride semiconductor that is a wurtzite type being (0001) plane as a main plane on the undercoat layer;
source/drain electrodes in ohmic contact, and a gate electrode in Schottky contact, with the carrier travel layer, which are formed directly or via another layer on the carrier travel layer, and
wherein the undercoat layer has an average lattice constant greater than that of the carrier travel layer, and a band gap greater than that of the carrier travel layer.
2. The field effect transistor according to claim 1 , wherein the field effect transistor forms two-dimensional electron gas at a side of the carrier travel layer facing the undercoat layer when applying an electric field.
3. The field effect transistor according to claim 1 , wherein the carrier travel layers comprises In x1 Al y1 Ga z1 N (x1+y1+z1=1) and the undercoat layer comprises In x2 Al y2 Ga z2 N (x2+y2+z2=1), and
wherein the two layers are made of components that satisfy the equations (1) and (2) at the same time:
LP In ( x 1 −x 2)+ LP Al ( yl−y 2)+ LP Ga ( z 1 −z 2)<0 (1)
BG In ( x 1 −x 2)+ BG Al ( yl−y 2)+ BG Ga ( z 1 −z 2)<0 (2)
in the above equations, LP In , LP Al and LP Ga denote the lattice constants of InN, AlN and GaN, respectively and BG In , BG Al and BG Ga indicate the band gap energies of InN, AlN and GaN, respectively.
4. The field effect transistor according to claim 3 , wherein the carrier travel layer comprises GaN as a main component and the undercoat layer comprises In x Al 1-X N (0.18<x<0.65) as a main component.
5. The field effect transistor according to claim 1 , further comprising a Schottky layer, between the gate electrode and the carrier travel layer, which comprises a material having a band gap greater than that of the carrier travel layer.
6. The field effect transistor according to claim 5 , wherein the carrier travel layer comprises GaN as a main component and the Schottky layer comprises In y Al 1-y N (0≦y<0.65) as a main component.
7. The field effect transistor according to claim 1 , further comprising an ohmic contact layer, between the source/drain electrodes and the carrier travel layer, which comprises a material having an average lattice constant smaller than that of the carrier travel layer.
8. The field effect transistor according to claim 7 , wherein the carrier travel layer comprises GaN as a main component and the ohmic contact layer comprises Al z Ga 1-z N (0<z1), In a Al 1-a N (0≦a<0.18) or a mixture thereof as a main component.
9. The field effect transistor according to claim 1 , further comprising a first insulation film having an opening on the carrier travel layer; and
wherein the gate electrode is provided in a recess that is formed in the carrier travel layer through the opening of the first insulation film.