Photodetector device having stacked structure with improved response rate
View Patent ↗A photodiode is provided which can operate at a high rate and is suitable for optical communications. The photodiode with a pin-type configuration of an end surface incidence type includes a first photodiode unit having a first n-type blocking layer, a first light-absorbing layer constituted by an intrinsic semiconductor, and a first p-type blocking layer on a semiinsulating substrate; a second photodiode unit having layers of the same configuration formed thereon; a contact layer; a first electrode; and a second electrode, wherein the thickness of each light-absorbing layer is half that in a conventional monolayer photodiode. As a result, the maximum travel time of the carriers (electrons and holes) in each photodiode unit is reduced by half and the photodiode can operate at a rate higher than that of the conventional photodiode.
1. A photodetector device comprising:
a structure in which a plurality of photodetector element units are stacked,
wherein each of said photodetector element units is formed by sequential lamination of a first blocking layer of a first conductivity type semiconductor, a light-absorbing layer of an intrinsic semiconductor, and a second blocking layer of a second conductivity type semiconductor, on a substrate,
wherein a first modulated signal light incident on the photodetector device is absorbed by each of said light-absorbing layers and converted into an electric signal provided as an output of the photodetector device, and
wherein the photodetector device is of an end surface incidence type, in which said first modulated signal light is incident upon an end surface of each of the light-absorbing layers of said photodetector element units, and the light-absorbing layers in said photodetector element units have substantially identical thicknesses.
2. The photodetector device according to claim 1 , wherein said first blocking layer is formed of first conductivity type InP, said light-absorbing layer is formed of an i-type In 1 Ga 1−y As (where y is a positive real number, and 1>y>0), and said second blocking layer is formed of second conductivity type InP.
3. The photodetector device according to claim 1 , wherein each of said photodetector element units comprises a first optical waveguide layer of the first conductivity type semiconductor and a second optical waveguide layer of the second conductivity type semiconductor, said first optical waveguide layer is provided between said first blocking layer and said light-absorbing layer and has a band gap intermediate between those of said first blocking layer and said light-absorbing layer, and said second optical waveguide layer is provided between said light-absorbing layer and said second blocking layer and has a band gap intermediate between those of said light-absorbing layer and said second blocking layer.
4. The photodetector device according to claim 3 , wherein said first blocking layer is formed of first conductivity type InP, said light-absorbing layer is formed of i-type In y Ga 1−y As (where y is a positive real number, and 1>y>0), said second blocking layer is formed of second conductivity type InP, said first optical waveguide layer Is formed of first conductivity type InGaAsP, and said second optical waveguide layer is formed of second conductivity type InGaAsP.
5. The photodetector device according to claim 1 , wherein said first conductivity type is one of n-type and p-type, and said second conductivity type is an other one of n-type and p-type.
6. The photodetector device according to claim 1 , wherein said photodetector element units are laminated in two layers and the thickness of each of said light-absorbing layers is 0.2˜0.5 μm.
7. A photodetector device comprising a photodetector element unit which is formed by sequential lamination of a first blocking layer of a first conductivity type semiconductor, a light-absorbing layer of an intrinsic semiconductor, and a second blocking layer of a second conductivity type semiconductor, on a substrate,
wherein a plurality of light-absorbing sub-layers are provided as said light-absorbing layer, and a well layer having a band gap less than that of said light-absorbing sub-layers and forming an energy well in both a conductivity band and a valence band is provided between said light-absorbing sub-layers, and
wherein the photodetector device is of an upper surface incidence type in which a signal light is incident on an upper surface of the second blocking layer, the light-absorbing sub-layers have different thicknesses, and the thickness of the light-absorbing sub-layer of the photodetector element unit which is closer to the second blocking layer is less than the thickness of the light-absorbing sub-layer which is farther from the second blocking layer,
the photodetector device further comprising a first optical waveguide layer of the first conductivity type semiconductor provided between said first blocking layer and a first light-absorbing sub-layer adjacent thereto, and a second optical waveguide layer of the second conductivity type semiconductor provided between said second blocking layer and a second light-absorbing sub-layer adjacent thereto, wherein said first optical waveguide layer has a band gap intermediate between those of said first blocking layer and said first light-absorbing sub-layer, and said second optical waveguide layer has a band gap intermediate between those of said second blocking layer and said second light-absorbing sub-layer.
8. The photodetector device according to claim 7 , wherein said first blocking layer is formed of first conductivity type InP, said light-absorbing sub-layers are formed of i-type In y Ga 1−y As (where y is a positive real number, and 1>y>0), said well layer is formed of i-type In x Ga 1−x As (where x is a positive real number, and 1>x>y), and said second blocking layer is formed of second conductivity type InP.
9. The photodetector device according to claim 7 , wherein said first blocking layer is formed of first conductivity type InP, said light-absorbing sub-layers are formed of i-type In y Ga 1−y As (where y is a positive real number, and 1>y>0), said well layer is farmed of i-type In x Ga 1−x As (where x is a positive real number, and 1>x>y), said second blocking layer is formed of second conductivity type InP, said first optical waveguide layer is formed of first conductivity type InGaAsP, and said second optical waveguide layer is formed of second conductivity type InGaAsP.
10. The photodetector device according to claim 7 , wherein said first conductivity type is any one of n-type and p-type, and said second conductivity type is an other one of n-type and p-type.
11. The photodetector device according to claim 7 , wherein a combined thickness of said first light-absorbing sub-layer and said second light-absorbing sub-layer is 0.4˜1.0 μm.