IP Library › Granted Patent US 6,636,441
Granted Patent Utility
US 6,636,441 · Confirmation No. 7556

SEMICONDUCTOR MEMORY DEVICE INCLUDING NON-VOLATILE MEMORY CELL ARRAY HAVING MOS STRUCTURE IN WELL REGION FORMED ON SEMICONDUCTOR SUBSTRATE

Inventor: Tadayuki Taura
Patented Case View Patent ↗ View Publication ↗
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2009-06-23 EBCC.AD Notice of Change of Address Place in File Wrapper Due to Electronic Business Center(EBC) Customer Number Update 1 View
2003-08-25 IFEE Issue Fee Payment (PTO-85B) 1 View
2003-08-25 LET. Miscellaneous Incoming Letter 2 View
2003-08-25 DRW Drawings-only black and white line drawings 5 View
2001-11-15 TRNA Transmittal of New Application 2 View
2001-11-15 ADS Application Data Sheet 3 View
2001-11-15 SPEC Specification 27 View
2001-11-15 CLM Claims 5 View
2001-11-15 ABST Abstract 1 View
2001-11-15 DRW Drawings-only black and white line drawings 5 View
2001-11-15 OATH Oath or Declaration filed 2 View
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Quick Facts
Patent No.
US 6,636,441
App. No.
09/987,611
Filed
2001-11-15
Granted
2003-10-21
Pub. No.
US20020057623A1
Examiner
HO, HOAI V
Art Unit
2818
PTA
-2 days