Patent Application
Utility
App. No. 10/011,420
· Confirmation No. 8395
Optical proximity effect correcting method and mask data forming method in semiconductor manufacturing process, which can sufficiently correct optical proximity effect, even under various situations with regard to size and shape of design pattern, and space width and position relation between design patterns
Abandoned -- Failure to Respond to an Office Action
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2001-12-04 | TRNA |
Transmittal of New Application | 5 | View | |
| 2001-12-04 | A.PE |
Preliminary Amendment | 2 | View | |
| 2001-12-04 | SPEC |
Specification | 38 | View | |
| 2001-12-04 | CLM |
Claims | 9 | View | |
| 2001-12-04 | ABST |
Abstract | 1 | View | |
| 2001-12-04 | DRW |
Drawings-only black and white line drawings | 20 | View | |
| 2001-12-04 | OATH |
Oath or Declaration filed | 2 | View |
Inventors
Keiichiro Tounai
Tokyo, JAPAN
Takeshi Hamamoto
Tokyo, JAPAN
Attorneys & Agents of Record
Classification
USPC
250/221
H10P76/00
G03F1/36
G03F7/70441
Prosecution
- Examiner
- LUU, THANH X
- Art Unit
- 2878
- Docket No.
- NEC 99USFP433 DIV
- Confirmation No.
- 8395
Foreign Priority
355239/1998
·
1998-12-14
·
JAPAN
Publication
- Pub. No.
- US20020047089A1
- Pub. Date
- 2002-04-25
from
NEC CORPORATION
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2003-02-19
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Quick Facts
- App. No.
- 10/011,420
- Filed
- 2001-12-04
- Pub. No.
- US20020047089A1
- Examiner
- LUU, THANH X
- Art Unit
- 2878
External Links