Plasma etching
View Patent ↗A substrate whose elemental constituents are selected from Groups III and V of the Periodic Table, is provided with pre-defined masked regions. Etching of the substrate comprising the steps of: a) forming a gas containing molecules having at least one methyl group (CH 3 ) linked to nitrogen into a plasma; and b) etching the unmasked regions of the substrate by means of the plasma. For a substrate whose elemental constituents are selected from Groups II and VI of the Periodic Table, the plasma etching gas used is trimethylamine. Since the methyl compound of nitrogen has a lower bond energy than for hydrocarbon mixtures, free methyl radicals are easier to obtain and the gas is more efficient as a methyl source. In addition, compared with hydrocarbon mixtures, reduced polymer formation can be expected due to preferential formation of methyl radicals over polymer-generating hydrocarbon radicals because of the lower bond energy for the former.
1. A method of etching a substrate provided with pre-defined masked regions, whose elemental constituents are selected from Groups III and V of the Periodic Table, comprising the steps of: a) forming a gas containing molecules having at least one methyl group (CH 3 ) linked to nitrogen into a plasma; and b) etching the unmasked regions of the substrate by means of the plasma such that etching of the group III materials is enhanced, thereby reducing the effect of preferential etching of the group V materials in groups III–V compounds.
2. The method according to claim 1 , wherein said etching gas is selected from the group consisting of methylamine (CH 3 NH 2 ), dimethylamine ((CH 3 ) 2 NH) and trimethylamine ((CH 3 ) 3 N).
3. A method of etching a substrate provided with pre-defined masked regions, whose elemental constituents are selected from Groups II and VI of the Periodic Table, comprising the steps of: a) forming an etching gas comprising trimethylamine ((CH 3 ) 3 N) into a plasma; and b) etching the unmasked regions of the substrate by means of the plasma such that etching of the group II materials is enhanced, thereby reducing the effect of preferential etching of the group VI materials in groups II–VI compounds.
4. The method according to claim 1 , wherein said etching gas is mixed with another gas selected from the group consisting of a rare gas, a halogen-containing gas, or a combination thereof.
5. A method according to claim 1 , wherein said step (a) comprises forming the gas into a plasma by supplying microwave electric power with a magnetic field to the etching gas.
6. A method according to claim 1 , wherein said step (a) comprises forming the gas into a plasma by supplying microwave electric power to the etching gas.
7. A method according to claim 1 , wherein said step (a) comprises forming the gas into a plasma by supplying radio frequency electric power to the etching gas.
8. A method according to claim 1 , wherein said step (a) comprises forming the gas into a plasma by supplying DC electric power to the etching gas.
9. A method according to claim 1 , wherein the ions are accelerated by a DC bias.
10. A method according to claim 9 , wherein said DC bias creates energy in the range of 0–2000 eV.
11. A method according to claim 1 , wherein the applied power is converted to an ion energy in the range of 0–2000 eV.
12. The method according to claim 3 , wherein said etching gas is mixed with another gas selected from the group consisting of a rare gas, a halogen-containing gas, or a combination thereof.
13. A method according to claim 3 , wherein said step (a) comprises forming the gas into a plasma by supplying microwave electric power with a magnetic filed to the etching gas.
14. A method according to claim 3 , wherein said step (a) comprises forming the gas into a plasma by supplying microwave electric power to the etching gas.
15. A method according to claim 3 , wherein said step (a) comprises forming the gas into a plasma by supplying radio frequency electric power to the etching gas.
16. A method according to claim 3 , wherein said step (a) comprises forming the gas into a plasma by supplying DC electric power to the etching gas.
17. A method according to claim 3 , wherein the ions are accelerated by a DC bias.
18. A method according to claim 17 , wherein said DC bias creates energy in the range of 0–2000 eV.
19. A method according to claim 1 , wherein the applied power is converted to an ion energy in the range of 0–2000 eV.
20. The method according to claim 4 , wherein said rare gas is selected from the group consisting of a H 2 , N 2 , O 2 , Ar or a combination thereof, and said halogen-containing gas is selected from the group consisting of Cl 2 , BCl 3 or a combination thereof.
21. The method according to claim 12 , wherein said rare gas is selected from the group consisting of a H 2 , N 2 , O 2 , Ar or a combination thereof, and said halogen-containing gas is selected from the group consisting of Cl 2 , BCl 3 or a combination thereof.