Silicon/silicon carbide composite and process for manufacturing the same
View Patent ↗The present invention provides a silicon/silicon carbide composite and having a high quality in avoiding warp or breakage and in a corrosion resistance, a durability, a heat shock resistance and particularly suitable used for semiconductor heat treatment member such as a dummy wafer or the like and a process for manufacturing a high purity silicon/silicon carbide composite containing a limited amount of carbon left without reaction. The present invention uses a silicon/silicon carbide composite comprised of 45 to 75 weight % of silicon and 25 to 55 weight % silicon carbide, said silicon carbide being formed from an assembly of fibers each having a thickness of 150 μm or less and a length of 0.8 to 3.5 mm. The present invention is directed to a process for manufacturing a silicon/silicon carbide composite which comprises a first step where cellulose fibers with a fiber thickness of 150 μm or less is heated at a temperature of 500° C. to 1500° C. in a non-oxidizing atmosphere to produce a porous carbon body with a bulk density of 0.10 to 0.80 g/cm 3 and a second step where said porous carbon body is silicification in an atmosphere containing silicon.
1. A silicon/silicon carbide composite comprised of 45 to 75 weight % of silicon and 25 to 55 weight % of silicon carbide, said silicon carbide consisting essentially of an assembly of fibers each having a thickness of 150 μm or less and a length of 0.8 to 3.5 mm, said composite having a surface on which a silicon carbide film having a thickness of 30 to 500 μm is formed.
2. A silicon/silicon carbide composite according to claim 1 , wherein said silicon/silicon carbide composite contains carbon left without reaction therein in an amount of 0.25% by weight or less.
3. A silicon/silicon carbide composite according to claim 1 , wherein said silicon/silicon carbide composite contains the silicon carbide film having a thickness of 30 to 150 μm to form a dummy wafer having a total thickness of 0.5 mm to 1 mm.
4. A silicon/silicon carbide composite according to claim 1 , wherein said silicon/silicon carbide composite is a semiconductor heat treatment member.
5. A silicon/silicon carbide composite consisting essentially of 45 to 75% by weight of silicon and 25 to 55% by weight of silicon carbide, said silicon carbide consisting essentially of an assembly of fibers each having a thickness of 150 μm or less and a length of 0.8 to 3.5 mm, said composite having a surface on which a silicon carbide film having a thickness of 30 to 500 μm is formed.
6. A silicon/silicon carbide composite according to claim 5 , wherein said silicon/silicon carbide composite is a dummy wafer with the silicon carbide film having a thickness of 30 to 150 μm formed on the surface thereof, said dummy wafer having a total thickness of 0.5 to 1 mm.
7. A silicon/silicon carbide composite according to claim 5 , wherein said silicon/silicon carbide composite is a semiconductor heat treatment member.
8. A silicon/silicon carbide composite according to claim 5 , wherein said silicon/silicon carbide composite contains carbon left without reaction therein in an amount of 0.25% by weight or less.
9. A process for manufacturing a silicon/silicon carbide composite comprising a first step in which cellulose fibers each having a fiber thickness of 150 μm or less are heated at a temperature of 500° C. to 1500° C. in a non-oxidizing atmosphere to obtain a porous carbon body having a bulk density of 0.10 to 0.80 g/cm 3 ;
and a second step in which said porous carbon body is silicified in an atmosphere containing silicon.
10. A process for manufacturing a silicon/silicon carbide composite according to claim 9 , wherein said thickness of each cellulose fiber is within a range of 5 to 80 μm.
11. A process for manufacturing a silicon/silicon carbide composite according to claim 9 or 10 , wherein the length of each cellulose fiber is 1.5mm or more.
12. A process for manufacturing a silicon/silicon carbide composite according to claim 9 , wherein said cellulose fiber is paper pulp.
13. A process of manufacturing a silicon/silicon carbide composite according to claim 11 , wherein said cellulose fiber is paper pulp.
14. A process for manufacturing a silicon/silicon carbide composite according to claim 9 , wherein the bulk density of the porous carbon body produced by said first step is 0.70 g/cm 3 or less.
15. A process for manufacturing a silicon/silicon carbide composite according to claim 9 , in which a silicification treatment in said second step is conducted by either a reaction with fused silicon or a reaction with silicon monoxide gas.
16. A process for manufacturing a silicon/silicon carbide composite according to claim 11 , wherein a silicification treatment in said second step is conducted by either a reaction with fused silicon or a reaction with silicon monoxide gas.
17. A process for manufacturing a silicon/silicon carbide composite according to claim 14 , wherein a silicification treatment in said second step is conducted by either a reaction with fused silicon or a reaction with silicon monoxide gas.
18. A process for manufacturing a silicon/silicon carbide composite according to claim 9 , wherein the porous carbon body produced by said first step is heated at a temperature of 1100° C. to 2000° C. in an atmosphere of halogen gas to be purified prior to the second step.
19. A process for manufacturing a silicon/silicon carbide composite according to claim 11 , wherein the porous carbon body produced by said first step is heated at a temperature of 1100° C. to 2000° C. in an atmosphere of halogen gas to be purified prior to the second step.
20. A process for manufacturing a silicon/silicon carbide composite according to claim 15 , wherein the porous carbon body produced by said first step is heated at a temperature of 1100° C. to 2000° C. in an atmosphere of halogen gas to be purified prior to the second step.
21. A process for manufacturing a silicon/silicon carbide composite according to claim 10 , wherein the length of each cellulose fiber is 1.5 mm or more.
22. A process for manufacturing a silicon/silicon carbide composite according to claim 10 , wherein said cellulose fiber is paper pulp.
23. A process for manufacturing a silicon/silicon carbide composite according to claim 10 , wherein the bulk density of the porous carbon body produced by said first step is 0.70 g/cm 3 or less.
24. A process for manufacturing a silicon/silicon carbide composite according to claim 13 , wherein the bulk density of the porous carbon body produced by said first step is 0.70 g/cm 3 or less.
25. A process for manufacturing a silicon/silicon carbide composite according to claim 10 , in which a silicification treatment in said second step is conducted by either a reaction with fused silicon or a reaction with silicon monoxide gas.
26. A process for manufacturing a silicon/silicon carbide composite according to claim 13 , in which a silicification treatment in said second step is conducted by either a reaction with fused silicon or a reaction with silicon monoxide gas.
27. A process for manufacturing a silicon/silicon carbide composite according to claim 10 , wherein the porous carbon body produced by said first step is heated at a temperature of 1100° C. to 2000° C. in an atmosphere of halogen gas to be purified prior to the second step.
28. A process for manufacturing a silicon/silicon carbide composite according to claim 13 , wherein the porous carbon body produced by said first step is heated at a temperature of 1100° C. to 2000° C. in an atmosphere of halogen gas to be purified prior to the second step.
29. A process for manufacturing a silicon/silicon carbide composite according to claim 16 , wherein the porous carbon body produced by said first step is heated at a temperature of 1100° C. to 2000° C. in an atmosphere of halogen gas to be purified prior to the second step.
30. A process for manufacturing a silicon/silicon carbide composite according to claim 17 , wherein the porous carbon body produced by said first step is heated at a temperature of 1100° C. to 2000° C. in an atmosphere of halogen gas to be purified prior to the second step.