Patent Assignment
Reel/Frame 019817/0749
Merger
Recorded: 2007-09-13
Pages: 17
Assignor
TOSHIBA CERAMICS CO., LTD.
Executed: 2007-06-01
Assignee
COVALENT MATERIALS CORPORATION
6-3, OHSAKI 1-CHOME, SHINAGAWA-KU, TOKYO, JAPAN
Covered Properties
(82)
Silica Glass Filter
Patent:
5,089,134 →
Application:
07/633,624 →
Apparatus for Preventing Clouding of a Semiconductor Wafer
Patent:
5,122,170 →
Application:
07/708,206 →
Electrode Plate for Plasma Etching
Patent:
5,324,411 →
Application:
07/946,602 →
Method for Forming a Nozzle Employed in Continuous Casting G
Patent:
5,435,950 →
Application:
08/035,930 →
Ceramic Filter and Manufacturing Method Therefor
Patent:
5,405,529 →
Application:
08/092,872 →
Vertical Boat and a Method for Making the Same
Patent:
5,492,229 →
Application:
08/151,386 →
Vertical Heat Treatment Device for Semiconductor
Patent:
5,494,524 →
Application:
08/166,999 →
Silicon Carbide Coated Carbon Composite Material and Method for Making Same
Patent:
5,462,800 →
Application:
08/169,751 →
Stirring Device
Patent:
5,449,493 →
Application:
08/173,934 →
Method of Manufacturing Aluminum Borate Whiskers Having a Reformed Surface Based Upon Gamma Alumina
Patent:
5,479,873 →
Application:
08/388,451 →
Vertical Boat
Patent:
5,507,873 →
Application:
08/465,607 →
Gas Supplying Head and Load Lock Chamber of Semiconductor Processing System
Patent:
5,578,129 →
Application:
08/516,361 →
Multi-Layered Ceramic Porous Body
Patent:
5,834,108 →
Application:
08/517,412 →
Setting Member for Heating Material
Patent:
5,804,324 →
Application:
08/588,512 →
Ceramic Porous Body Having a Continuous Particle Size Distribution
Patent:
5,762,841 →
Application:
08/604,623 →
Manufacturing Method of a Silicon Wafer Having a Controlled Bmd Concentration
Patent:
5,788,763 →
Application:
08/612,214 →
Silicon Wafer Manufacturing Method Eliminating Final Mirror-Polishing Step
Patent:
5,744,401 →
Application:
08/620,195 →
Growth of Silicon Single Crystal from Melt Having Extraordinary Eddy Flows on Its Surface
Patent:
5,704,974 →
Application:
08/620,873 →
Growth of Silicon Single Crystal
Patent:
5,683,504 →
Application:
08/621,054 →
Vapor Phase Growth Apparatus
Patent:
5,868,850 →
Application:
08/659,498 →
Heat Treatment Jig and Method of Producing the Same
Patent:
6,071,343 →
Application:
08/743,791 →
Treatment Apparatus for High-Precision Analysis of Impurities in Silicic Material
Patent:
5,849,597 →
Application:
08/769,128 →
Epitaxial Growth Method
Patent:
5,904,769 →
Application:
08/775,353 →
Hydrogen Heat Treatment Method of Silicon Wafers Using a High-Purity Inert Substitution Gas
Patent:
6,066,579 →
Application:
08/781,026 →
A Sic Member and a Method of Fabricating the Same
Patent:
5,937,316 →
Application:
08/879,702 →
Calcining Tool Material and Method of Fabricating Therof
Patent:
6,001,470 →
Application:
08/979,856 →
Vapor Deposition Apparatus and Method for Forming Thin Film
Patent:
6,059,885 →
Application:
08/991,407 →
Vapor Deposition Apparatus and Vapor Deposition Method
Patent:
6,132,519 →
Application:
08/991,409 →
Method of and Apparatus for Removing Metallic Impurities Diffused in a Semiconductor Substrate
Patent:
6,054,373 →
Application:
09/006,996 →
Vertical Wafer Boat
Patent:
6,110,285 →
Application:
09/060,293 →
Quartz Glass, Heat Treating Apparatus Using Quartz Glass, and Heat Treating Method
Patent:
6,093,666 →
Application:
09/085,006 →
Silicon Crystal, and Device and Method for Manufacturing Same
Patent:
6,096,128 →
Application:
09/090,875 →
Jig for Semiconductor Wafers and Method for Producing the Same
Patent:
6,093,644 →
Application:
09/104,539 →
Carbon Heater
Patent:
6,043,468 →
Application:
09/126,847 →
High-Speed Rotational Vapor Deposition Apparatus and High-Speed Rotational Vapor Deposition Thin Film Forming Method
Patent:
6,113,705 →
Application:
09/137,298 →
Method for Making a Slant-Surface Silicon Wafer Having a Reconstructed Atomic-Level Stepped Surface Structure
Patent:
5,966,625 →
Application:
09/187,038 →
Gas Filter Module Having Two-Part Filter and Method of Producing the Same
Patent:
6,210,458 →
Application:
09/220,348 →
Process for Manufacturing a Product of Glassy Carbon
Patent:
6,245,313 →
Application:
09/312,695 →
Aluminum Nitride Sintered Body, Method of Producing Thereof, Electrostatic Chuck, Susceptor, Dummy Wafer, Clamp Ring and Particle Catcher Using the Same
Patent:
6,225,249 →
Application:
09/349,710 →
Material for Sintering Appliance
Patent:
6,187,463 →
Application:
09/366,051 →
Sealing Terminal Having Heating Element
Patent:
6,204,488 →
Application:
09/450,755 →
Heater
Patent:
6,407,371 →
Application:
09/451,868 →
Calcium phosphate porous sintered body and production thereof
Patent:
6,340,648 →
Application:
09/548,742 →
Wafer heating device and method of controlling the same
Patent:
6,250,914 →
Application:
09/556,943 →
Silica Glass Crucible and Method of Fabricating Thereof
Patent:
6,652,934 →
Application:
09/584,478 →
Quartz glass, heat treating apparatus using quartz glass, and heat treating method
Patent:
6,263,704 →
Application:
09/584,721 →
Wafer Defect Measuring Method and Apparatus
Patent:
6,734,960 →
Application:
09/589,087 →
Carbon electrode for melting quartz glass and method of fabricating thereof
Patent:
6,363,098 →
Application:
09/672,982 →
Method and Apparatus for Controlling Rise and Fall of Temperature in Semiconductor Substrates
Method of Fabricating a Single Crystal Ingot and Method of Fabricating a Silicon Wafer
Polishing Apparatus and Method Thereof
Fluid Heating Apparatus
Cvd-Sic Self-Supporting Membrane Structure and Method for Manufacturing the Same
Apparatus for Reduced-Pressure Epitaxial Growth and Method of Controlling the Apparatus
Heater Sealed with Carbon Wire Heating Element
Heat Treating Apparatus Using Quartz Glass
Single Crystal Pulling Apparatus and Pulling Method
Ceramics Material and Producing the Same
Method of Chemically Growing a Thin Film in a Gas Phase on a Silicon Semiconductor Substrate
Method for Manufacturing Si-Sic Member for Semiconductor Heat Treatment
Patent:
6,699,401 →
Application:
09/958,911 →
Porous Ceramics Body for in Vivo or in Vitro Use
Silicon/Silicon Carbide Composite and Process for Manufacturing the Same
Viscoelasticity Measuring Device
Ceramic Member with Fine Protrusions on Surface and Method of Producing the Same
Heater
Plasma-Resistant Member for Semiconductor Manufacturing Apparatus and Method for Manufacturing the Same
Ceramics for in Vivo Use
Plasma-Resistant Articles and Production Method Thereof
Silica Glass Member for Semiconductor and Production Method Thereof
Wafer Inspection Apparatus
Carbon Wire Heating Object Sealing Heater and Fluid Heating Apparatus Using the Same Heater
Semiconductor Wafer and Its Manufacturing Method
Apparatus for Pulling a Single Crystal
Titanium Dioxide Fine Particles and Method for Producing the Same, and Method for Producing Visible Light Activatable Photocatalyst
Steam Generator and Mixer Using the Same
Manufacturing Method for a Silicon Substrate Having Strained Layer
Plasma Resistant Member
Silicon Seed Crystal and Method for Manufacturing Silicon Single Crystal
Silicon Single Crystal Wafer Fabricating Method and Silicon Single Crystal Wafer
Polishing Head and Polishing Apparatus
A Semiconductor Substrate Comprising a Support Substrate Which Comprises a Gettering Site
Carbon Wire Heating Object Sealing Heater and Fluid Heating Apparatus Using the Same Heater
Related Assignments
(25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignors Interest.
Jan 28, 1991
From: ANDO, KUNIKO; SHIRAISHI, KOICHI; SHIMBO, MASARU; SHIMAI, SHUNZO
To: TOSHIBA CERAMICS CO., LTD.
Reel/Frame 005578/0469 →
Assignment of Assignors Interest.
Sep 18, 1992
From: ICHISHIMA, MASAHIKO; SASAKI, YASUMI; TOYA, EIICHI; KASAHARA, MASATOSHI
To: TOSHIBA CERAMICS CO., LTD., A CORP. OF JAPAN
Reel/Frame 006262/0908 →
Assignment of Assignor's Interest
May 21, 1993
From: SUGIURA, SADANOBU; OYA, SATOSHI; KAWASHIMA, TERUHISA; KAWARADA, KOJI
To: TOSHIBA CERAMICS CO., LTD.
Reel/Frame 006548/0167 →
Assignment of Assignor's Interest
Jul 19, 1993
From: SHIMAI, SHUNZO; IMURA, KOICHI; OKAMOTO, KENICHI; MUTO, TADAYOSHI
To: TOSHIBA CERAMICS CO., LTD.
Reel/Frame 006634/0949 →
Assignment of Assignor's Interest
Feb 1, 1994
From: TANAKA, TAKASHI; YOSHIKAWA, JUN; TOYA, EIICHI; KITAZAWA, ATSUO
To: TOSHIBA CERAMICS CO., LTD.
Reel/Frame 006859/0942 →
Assignment of Assignor's Interest
Mar 16, 1994
From: INABA, TAKESHI; TOYA, EIICHI; TANAKA, TAKASHI; SASAKI, YASUMI
To: TOSHIBA CERAMICS CO., LTD.
Reel/Frame 006940/0296 →
Assignment of Assignor's Interest
Jul 20, 1995
From: SHINTANI, YOSHITOMO; SUGANUMA, TETSUYA; MATSUO, SHUITSU; SAITO, HAJIME
To: TOYOTA JIDOSHA KABUSHIKI KAISHA; TOSHIBA CERAMICS CO., LTD.
Reel/Frame 007557/0218 →
Assignment of Assignor's Interest
Oct 19, 1995
From: MORIYA, SHUJI
To: TOKYO ELECTRON LIMITED
Reel/Frame 007673/0954 →
Assignment of Assignor's Interest
Jan 18, 1996
From: NIWA, SHIGEKI; OKADA, HIROSHI; OKIYAMA, YASUHARU; SUZUKI, TOSHIYUKI
To: TOSHIBA CERAMICS CO., LTD.
Reel/Frame 007847/0965 →
Assignment of Assignor's Interest
May 16, 1996
From: SHIRAI, HIROSHI; YOSHIKAWA, JUN; OGAWA, YOUJI; KASHIMA, KAZUHIKO
To: TOSHIBA CERAMICS CO., LTD.
Reel/Frame 007944/0478 →
Assignment of Assignor's Interest
May 29, 1996
From: HAYASHI, KENRO; TAKEDA, RYUJI; CHAKI, KATSUHIRO; SAITO,HIROYUKI
To: TOSHIBA CERAMICS CO.,LTD.
Reel/Frame 007980/0623 →
Assignment of Assignor's Interest
Jun 3, 1996
From: IZUNOME, KOJI; KAWANISHI, SOUROKU; TOGAWA, SHINJI; IKARI, ATSUSHI
To: RESEARCH DEVELOPMENT CORPORATION OF JAPAN; IZUNOME, KOJI; KAWANISHI, SOUROKU; TOGAWA, SHINJI
Reel/Frame 007970/0053 →
Assignment of Assignor's Interest
Jun 3, 1996
From: IZUNOME, KOJI; KAWANISHI, SOUROKU; TOGAWA, SHINJI; IKARI, ATSUSHI
To: RESEARCH DEVELOPMENT CORPORATION OF JAPAN; IZUNOME, KOJI; KAWANISHI, SOUROKU; IKARI, ATSUSHI
Reel/Frame 007968/0990 →
Assignment of Assignor's Interest
Aug 15, 1996
From: ICHISHIMA, MASAHIKO; TOYA, EIICHI; OHASHI, TADASHI; SHIMADA, MASAKI
To: TOSHIBA KIKAI CO., LTD.; TOSHIBA CERAMICS CO., LTD.
Reel/Frame 008124/0111 →
Assignment of Assignor's Interest
Nov 14, 1996
From: HAYASHI, KENRO; TAKEDA, RYUJI; CHAKI, KATSUHIRO; XIN, PING
To: TOSHIBA CERAMICS CO., LTD.
Reel/Frame 008262/0358 →
Assignment of Assignor's Interest
Dec 18, 1996
From: TOKUOKA, FUMIO; SHIMANUKI, KAZUHIKO
To: TOSHIBA CERAMICS CO., LTD.
Reel/Frame 008355/0772 →
Assignment of Assignor's Interest
Jan 3, 1997
From: OHASHI, TADASHI; MITANI, SHINICHI; HONDA, TAKAAKI
To: TOSHIBA CERAMICS CO., LTD.; TOSHIBA MACHINE CO., LTD.
Reel/Frame 008378/0658 →
Assignment of Assignor's Interest
Jan 9, 1997
From: MATSUSHITA, JUNICHI; YOSHIKAWA, JUN; SANADA, MASAYUKI; SHIMIZU, TATSUYA
To: TOSHIBA CERAMICS CO., LTD.
Reel/Frame 008402/0699 →
Assignment of Assignor's Interest
Jan 15, 1997
From: TOGOWA, SHINJI
To: KOMATSU ELECTRONIC METALS CO., LTD., A CORP. OF JAPAN
Reel/Frame 008308/0456 →
Assignment of Assignor's Interest
Jan 15, 1997
From: KAWANISHI, SOUROKU
To: SUMITOMO SITIX CORPORATION
Reel/Frame 008308/0454 →
Assignment of Assignor's Interest
Jan 15, 1997
From: SASAKI, HITOSHI
To: MITSUBISHI MATERIALS CORPORATION
Reel/Frame 008308/0452 →
Assignment of Assignor's Interest
Jan 15, 1997
From: IZUNOME, KOJI
To: TOSHIBA CERAMICS CO., LTD., A CORP. OF JAPAN
Reel/Frame 008308/0413 →
Assignment of Assignor's Interest
Jan 15, 1997
From: IKARI, ATSUSHI
To: NIPPON STEEL CORPORATION, A CORP. OF JAPAN
Reel/Frame 008308/0450 →
Assignment of Assignor's Interest
Jan 17, 1997
From: IZUNOME, KOJI
To: TOSHIBA CERAMICS CO., LTD.
Reel/Frame 008308/0218 →
Assignment of Assignor's Interest
Jan 17, 1997
From: KAWANISHI, SOUROKU
To: SUMITOMO SITIX CORPORATION, A CORP. OF JAPAN
Reel/Frame 008308/0183 →