Semiconductor substrate comprising a support substrate which comprises a gettering site
View Patent ↗A semiconductor substrate includes a support substrate 1 has gettering sites 10 for gettering impurity metal, an embedded insulating film 2 which is provided on the support substrate 1 and contains oxides of an element whose single bond energy to oxygen is higher than that to silicon, and a semiconductor layer (an SOI layer) 3 provided on the embedded insulating film 2.
1. A semiconductor substrate, comprising:
a support substrate comprising a gettering site for gettering an impurity metal;
an embedded insulating film provided on the support substrate and comprising an oxide of an element whose single bond energy to oxygen is higher than that to silicon;
a semiconductor layer provided on the embedded insulating film; and
at least one of:
a support-side silicon oxide film interposed between the support substrate and the embedded insulating film; and
an active-layer-side silicon oxide film interposed between the embedded insulating film and the semiconductor layer.
2. The semiconductor substrate as set forth in claim 1 , wherein the embedded insulating film comprises oxides of one or more elements selected from the group consisting of hafnium, zirconium, aluminum, titanium, tantalum, and lanthanum.
3. The semiconductor substrate as set forth in claim 1 , wherein the embedded insulating film comprises silicates of one or more elements selected from the group consisting of hafnium, zirconium, aluminum, titanium, tantalum, and lanthanum.
4. The semiconductor substrate as set forth in claim 1 , wherein the gettering site comprises a SiO 2 substance generated by precipitation of oxygen in the support substrate.
5. The semiconductor substrate as set forth in claim 1 , wherein the gettering site comprises a micro imperfection.
6. The semiconductor substrate as set forth in claim 1 , wherein the gettering site comprises a phosphorous diffused layer.
7. The semiconductor substrate as set forth in claim 1 , wherein the gettering site comprises a micro cavity.
8. The semiconductor substrate as set forth in claim 1 , wherein
the embedded insulating film comprises at least one element selected from the group consisting of hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), aluminum oxide (Alumina; Al 2 O 3 ), titanium oxide (TiO 2 ), tantalum oxide (Ta 2 O 5 ), or lanthanum oxide (La 2 O 3 ).
9. The semiconductor substrate as set forth in claim 1 , wherein
the embedded insulating film comprises at least one element selected from the group consisting of a hafnium aluminum oxide (Hf x Al y O z ), a hafnium zirconium oxide (Hf x Zr y O z ), a zirconium aluminum oxide (Zr x Al y O z ), a titanium aluminum oxide (Ti x Al y O z ), a titanium zirconium oxide (Ti x Zr y O z ), a titanium hafnium oxide (Ti x Hf y O z ), a tantalum aluminum oxide (Ta x Al y O z ), a tantalum zirconium oxide (Ta x Zr y O z ), a hafnium tantalum oxide (Ta x Hf y O z ), a tantalum titanium oxide (Ta x Ti y O z ), a tantalum aluminum oxide (La x Al y O z ), a lanthanum zirconium oxide (La x Zr y O z ), a lanthanum hafnium oxide (La x Hf y O z ), a lanthanum titanium oxide (La x Ti y O z ), and a lanthanum tantalum oxide (La x Ta y O z ), wherein X, Y, Z are integers.
10. The semiconductor substrate as set forth in claim 1 , wherein
the embedded insulating film comprises at least one element selected from the group consisting of a Hf silicate (Hf—Si—O-based), a Zr silicate (Zr—Si—O-based), an Al silicate (Al—Si—O-based), a Ti silicate (Ti—Si—O-based), a Ta silicate (Ta—Si—O-based), a La silicate (La—Si—O-based), a HfZr silicate (Hf—Zr—Si—O-based), a HfAl silicate (Hf—Al—Si—O-based), a ZrAl silicate (Zr—Al—Si—O-based), a TiHf silicate (Ti—Hf—Si—O-based), a TiAl silicate (Ti—Al—Si—O-based), a TiZr silicate (Ti—Zr—Si—O-based), a TaHf silicate (Ta—Hf—Si—O-based), a TaAl silicate (Ta—Al—Si—O-based), a TaZr silicate (Ta—Zr—Si—O-based), a TaTi silicate (Ta—Ti—Si—O-based), a LaHf silicate (La—Hf—Si—O-based), a LaAl silicate (La—Al—Si—O-based), a LaZr silicate (La—Zr—Si—O-based), a LaTi silicate (La—Ti—Si—O-based), and a LaTa silicate (La—Ta—Si—O-based).
11. The semiconductor substrate as set forth in claim 1 ,
wherein the gettering site comprises an impurity region which is formed by implanting phosphor ions (P+) into the support substrate and annealing the thus-implanted substrate.
12. The semiconductor substrate as set forth in claim 11 , wherein the gettering site is formed by implanting phosphor ions (P+) into the substrate with an implantation energy of 100 KeV and a dose of 5×10 15 atoms/cm 2 .
13. A semiconductor substrate, comprising:
a support substrate comprising a gettering site for gettering an impurity metal;
an embedded insulating film provided on the support substrate and comprising an oxide of an element whose single bond energy to oxygen is higher than that to silicon;
a semiconductor layer provided on the embedded insulating film; and
an embedded semiconductor layer which is interposed between the embedded insulating film and the semiconductor layer
wherein a lattice constant of the embedded semiconductor layer is different from that of the semiconductor layer.
14. The semiconductor substrate as set forth in claim 13 , wherein the embedded insulating film comprises oxides of one or more element selected from a group consisting of hafnium, zirconium, aluminum, titanium, tantalum, and lanthanum.
15. The semiconductor substrate as set forth in claim 13 , wherein the embedded insulating film comprises silicates of one or more element selected from a group consisting of hafnium, zirconium, aluminum, titanium, tantalum, and lanthanum.
16. The semiconductor substrate as set forth in claim 13 , wherein the gettering site comprises SiO 2 substance generated by precipitation of oxygen in the support substrate.
17. The semiconductor substrate as set forth in claim 13 , wherein the gettering site comprises a micro imperfection.
18. The semiconductor substrate as set forth in claim 13 , wherein the gettering site comprises a phosphorous diffused layer.
19. The semiconductor substrate as set forth in claim 13 ,
wherein the embedded semiconductor layer comprising a monocrystalline silicon germanium.
20. A semiconductor substrate, comprising:
a support substrate comprising a gettering site for gettering an impurity metal;
an embedded insulating film provided on the support substrate and comprising an oxide of an element whose single bond energy to oxygen is higher than that to silicon;
an embedded semiconductor film provided on the embedded insulating film; and
a strained semiconductor layer provided on the embedded semiconductor film,
wherein a lattice constant of the strained semiconductor layer is different from that of the embedded semiconductor film.