Plasma resistant member
View Patent ↗A plasma resistant member has a base material and a coating layer made of an Y 2 O 3 , the coating layer being formed on a surface of the base material. The coating layer has a thickness of 10 μm or more and the Y 2 O 3 of the coating layer contains solid solution Si ranging from 100 ppm to 1000 ppm.
1. A plasma resistant member, comprising
a base material; and
a coating layer made predominantly of an Y 2 O 3 , the coating layer being formed on a surface of the base material,
wherein the coating layer has a thickness of 10 μm or more and
the Y 2 O 3 of the coating layer contains solid solution Si ranging from 100 ppm to 1000 ppm.
2. The plasma resistant member as set forth in claim 1 , wherein the coating layer is formed by thermal spraying with an Y 2 O 3 containing a solid solution Si ranging from 100 ppm to 1000 ppm.
3. The plasma resistant member as set forth in claim 1 , wherein the base material consists essentially of aluminum.
4. The plasma resistant member as set forth in claim 1 , wherein the solid solution Si is in an Y 2 O 3 crystal.
5. The plasma resistant member as set forth in claim 1 , wherein the base material is a high purity aluminum.
6. The plasma resistant member as set forth in claim 5 , wherein the high purity aluminum has a purity of 99.8%.
7. The plasma resistant member as set forth in claim 1 , wherein the coating layer is formed directly on the surface of the base material.
8. The plasma resistant member as set forth in claim 1 , wherein the coating layer is formed directly on the surface of the base material without any second layer.
9. The plasma resistant member as set forth in claim 1 , wherein the coating layer consists essentially of Y 2 O 3 and said solid solution Si.
10. A plasma etching apparatus, comprising:
a chamber including a wall, wherein the wall is the plasma resistant member according to claim 1 .
11. A plasma etching apparatus, comprising:
a chamber including a wall, wherein the wall is the plasma resistant member according to claim 1 , and wherein the plasma etching apparatus is adapted for use in etching semiconductors.
12. A plasma etching apparatus, comprising:
a chamber including a wall, wherein the wall is the plasma resistant member according to claim 1 , and wherein the plasma etching apparatus is adapted for use in manufacturing at least one of semiconductors and liquid crystals.