IP Library › Granted Patent US 6,054,373
Granted Patent Utility
US 6,054,373 · App. 09/006,996

Method of and apparatus for removing metallic impurities diffused in a semiconductor substrate

Inventors: Hiroshi Tomita, Hisashi Muraoka, Ryuji Takeda
Patented Case View Patent ↗
Granted: Apr 25, 2000 Filed: Jan 14, 1998
Inventors
Hiroshi Tomita
Hisashi Muraoka
Ryuji Takeda
Assignees (at issue)
Kabushiki Kaisha Toshiba
PUREX CO., LTD.
Toshiba Ceramics Co., Ltd.

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Quick Facts
Patent No.
US 6,054,373
App. No.
09/006,996
Filed
1998-01-14
Granted
2000-04-25
Kind
A