Plasma-resistant member for semiconductor manufacturing apparatus and method for manufacturing the same
View Patent ↗A plasma-resistant member for a semiconductor manufacturing apparatus, which can reduce the contamination level on a semiconductor wafer. The contents of Fe, Ni, Cr and Cu are made lower than 1.0 ppm respectively within a depth of at least 10 μm from surface in a plasma-resistant member.
1. A plasma-resistant member for a semiconductor manufacturing apparatus, wherein the concentrations of Fe, Ni, Cr and Cu impurities are each lower than 1.0 ppm within a depth of at least 10 μm from the surface in said plasma-resistant member, and wherein said plasma-resistant member comprises yttrium oxide and/or yttrium aluminum garnet ceramics.
2. The plasma resistant member according to claim 1 , wherein said depth is at least 20 μm.
3. The plasma resistant member according to claim 2 , wherein said depth is at least 50 μm.
4. The plasma resistant member according to claim 1 , wherein said plasma-resistant member comprises yttrium oxide and yttrium aluminum garnet ceramics.
5. A plasma-resistant member for a semiconductor manufacturing apparatus, wherein the concentrations of Fe, Ni, Cr and Cu impurities are each lower than 1.0 ppm within a depth of at least 10 μm from the surface in said plasma-resistant member, and wherein said plasma-resistant member comprises a ceramic of one or more rare earth elements, one or more alkaline earth elements, or alumina.
6. The plasma-resistant member according to claim 5 , wherein the ceramic comprises alumina.
7. The plasma-resistant member according to claim 5 , wherein the ceramic comprises one or more rare earth elements.
8. The plasma-resistant member according to claim 5 , wherein the ceramic comprises one or more alkaline earth elements.
9. The plasma-resistant member according to claim 8 , wherein the alkaline earth elements are present as their fluoride salts.
10. The plasma-resistant member according to claim 9 , wherein the fluoride salt is CaF 2 .
11. The plasma resistant member according to claim 5 , wherein said depth is at least 20 μm.
12. The plasma resistant member according to claim 11 , wherein said depth is at least 50 μm.