Adhesion layer for a polymer memory device and method therefor
View Patent ↗Briefly, in accordance with one embodiment of the invention, a device, such as a memory cell, includes a dielectric layer and a layer of phase-change material with an adhesion layer between the dielectric layer and the layer of phase-change material.
1. An apparatus comprising:
a dielectric layer;
an adhesion layer comprising hemispheric grain polysilicon overlying the dielectric layer; and
a phase-change material overlying the adhesion layer.
2. The apparatus of claim 1 , wherein the adhesion layer is on the dielectric layer.
3. The apparatus of claim 1 , wherein the phase-change material is on the adhesion layer.
4. The apparatus of claim 1 , wherein the adhesion layer consists essentially of silicon.
5. The apparatus of claim 1 , wherein the adhesion layer comprises at least forty percent silicon atoms by weight.
6. The apparatus of claim 1 , wherein the adhesion layer comprises three dimensional grains.
7. An apparatus comprising:
an adhesion layer comprising silicon having a rough surface; and
a phase-change material on the adhesion layer.
8. The apparatus of claim 7 , wherein the adhesion layer comprises hemispherical grain polysilicon.
9. The apparatus of claim 7 , wherein the adhesion layer has a surface comprising bumps having an average height of at least 30 Angstroms.
10. The apparatus of claim 7 , further comprising a dielectric layer, wherein the adhesion layer is on the dielectric layer.
11. The apparatus of claim 10 , wherein the dielectric layer comprises silicon dioxide or silicon nitride.
12. The apparatus of claim 7 , wherein the phase-change material comprises a chalcogenide alloys.
13. The apparatus of claim 12 , wherein the phase-change material comprises GeSbTe alloys.
14. A method comprising:
forming an interfacial layer having hemispheric grains; and forming a phase-change material over said interfacial layer.
15. The method of claim 14 , wherein forming an interfacial layer includes forming an interfacial layer over an insulator.
16. The method of claim 14 wherein forming an interfacial layer includes forming a layer comprising silicon.
17. The method of claim 14 further including forming the interfacial layer over a layer of dielectric material.
18. The method of claim 17 further including forming an opening through said interfacial layer and said dielectric material.
19. The method of claim 18 further including forming the phase-change material over the interfacial layer and in the opening.
20. An apparatus comprising:
an adhesion layer having bumps of at least 30 Angstroms; and
a chalcogenide phase-change material on said adhesion layer.
21. The apparatus of claim 20 wherein said adhesion layer includes silicon.
22. The apparatus of claim 20 wherein said adhesion layer comprises hemispherical grain polysilicon.
23. The apparatus of claim 20 wherein said adhesion layer includes polysilicon.
24. An apparatus comprising:
an adhesion layer having bumps of at least 25 Angstroms;
a dielectric layer, said adhesion layer on the dielectric layer; and
a phase-change material on the adhesion layer.
25. The apparatus of claim 24 wherein said adhesion layer includes silicon.
26. The apparatus of claim 24 wherein said adhesion layer comprises hemispherical grain polysilicon.
27. The apparatus of claim 24 wherein said adhesion layer includes polysilicon.