Patent Assignment
Reel/Frame 039379/0077
Change of Name
Recorded: 2016-07-18
Pages: 11
Assignor
CARLOW INNOVATIONS, LLC
Executed: 2016-07-08
Assignee
OVONYX MEMORY TECHNOLOGY, LLC
1940 DUKE STREET, SUITE 200, ALEXANDRIA, VIRGINIA, 22314
Covered Properties
(311)
Second-Layer Phase Change Memory Array on Top of a Logic Device
Patent:
5,714,768 →
Application:
08/547,349 →
Composite Memory Material Comprising a Mixture of Phase-Change Memory Material and Dielectric Material
Patent:
5,825,046 →
Application:
08/739,080 →
Memory Element with Energy Control Mechanism
Patent:
5,933,365 →
Application:
08/878,870 →
Memory Element with Memory Material Comprising Phase-Change Material and Dielectric Material
Patent:
6,087,674 →
Application:
09/063,174 →
Universal Memory Element and Method of Programming Same
Patent:
5,912,839 →
Application:
09/102,887 →
Electrically Programmable Memory Element with Improved Contacts
Patent:
6,969,866 →
Application:
09/276,273 →
Universal Memory Element with Systems Employing Same and Apparatus and Method for Reading, Writing and Programming Same
Patent:
6,141,241 →
Application:
09/289,713 →
Method of Programming Phase-Change Memory Element
Patent:
6,075,719 →
Application:
09/337,778 →
Multibit Single Cell Memory Element Having Tapered Contact
Patent:
37,259 →
Application:
09/436,367 →
Programmable Resistance Memory Arrays with Reference Cells
Patent:
6,314,014 →
Application:
09/464,898 →
Single Level Metal Memory Cell Using Chalcogenide Cladding
Patent:
6,567,293 →
Application:
09/675,285 →
Compositionally Modified Resistive Electrode
Patent:
6,404,665 →
Application:
09/675,803 →
Method to enhance performance of thermal resistor device
Patent:
6,339,544 →
Application:
09/676,317 →
Electrically Programmable Memory Element with Multi-Regioned Contact
Patent:
6,617,192 →
Application:
09/677,957 →
Method to Selectively Increase the Top Resistance of the Lower Programming Electrode in a Phase-Change Memory.
Phase-Change Memory Bipolar Array Utilizing a Single Shallow Trench Isolation for Creating an Individual Active Area Region for Two Memory Array Elements and One Bipolar Base Contact
Lower Electrode Isolation in a Double-Wide Trench
A Method of Forming a Phase-Change Memory Cell Using Silicon-on-Insulator Low Electrode in Chalcogenide Elements
Single Level Metal Memory Cell Using Chalcogenide Cladding
Compositionally Modified Resistive Electrode
Electrically Programmable Memory Element with Reduced Area of Contact and Method for Making Same
Providing Equal Cell Programming Conditions Across a Large and High Density Array of Phase-Change Memory Cells
Patent:
6,480,438 →
Application:
09/881,439 →
Method for Making Programmable Resistance Memory Element
Method for Making Programmable Resistance Memory Element Using Silylated Photoresist
Reduced Area Intersection Between Electrode and Programming Element
Programming a Phase-Change Memory with Slow Quench Time
Programming a Phase-Change Material Memory
Modified Contact for Programmable Devices
Utilizing Atomic Layer Deposition for Programmable Device
Pore Structure for Programmable Device
Electrically Programmable Memory Element with Raised Pore
Programmable Chalcogenide Fuse Within a Semiconductor Device
Patent:
6,448,576 →
Application:
09/943,178 →
Method to Enhance Performance of Thermal Resistor Device
Elevated Pore Phase-Change Memory
Method for Making Small Pore for Use in Programmable Resistance Memory Element
Programmable Resistance Memory Array
Forming Tapered Lower Electrode Phase-Change Memories
Carbon-Containing Interfacial Layer for Phase-Change Memory
Reducing Leakage Currents in Memories with Phase-Change Material
Phase Change Material Memory Device
Technique and Apparatus for Performing Write Operations to a Phase Change Material Memory Device
Method and Apparatus to Operate a Memory Cell
Adhesion Layer for a Polymer Memory Device and Method Therefor
Memory Device
Patent:
6,567,296 →
Application:
10/041,684 →
Method for Making Programmable Resistance Memory Element
Programmable Resistance Memory Element
High Voltage Row and Column Driver for Programmable Resistance Memory
Methods of Computing with Digital Multistate Phase Change Materials
Methods of Factoring and Modular Arithmetic
Method for Manufacturing a Programmable Chalcogenide Fuse Within a Semiconductor Device
Analog Neurons and Neurosynaptic Networks
Method for Forming Phase-Change Memory Bipolar Array Utilizing a Single Shallow Trench Isolation for Creating an Individual Active Area Region for Two Memory Array Elements and One Bipolar Base Contact
Programmable Resistance Memory Element with Layered Memory Material
Method of Data Storage Using Only Amorphous Phase of Electrically Programmable Phase-Change Memory Element
Method of Operating Programmable Resistant Element
Single Level Metal Memory Cell Using Chalcogenide Cladding
Programmable Resistance Memory Element and Method for Making Same
Modified Contact for Programmable Devices
Utilizing Atomic Layer Deposition for Programmable Device
Small Area Contact Region, High Efficiency Phase Change Memory Cell and Fabrication Method Thereof
Isolating Phase Change Memories with Schottky Diodes and Guard Rings
Using an Mos Select Gate for a Phase Change Memory
Vertical Elevated Pore Phase Change Memory
Forming Phase Change Memories
Architecture of a Phase-Change Nonvolatile Memory Array
Method to Manufacture a Phase Change Memory
Method and System to Store Information
Memory and Access Devices
Single Supply Voltage, Nonvolatile Phase Change Memory Device with Cascoded Column Selection and Simultaneous Word Read/Write Operations
Method for Manufacturing Sidewall Contacts for a Chalcogenide Memory Device
Silicon on Insulator Phase Change Memory
Integrated Resistor, Phase-Change Memory Element Including This Resistor, and Process for the Fabrication Thereof
Sublithographic Contact Structure, Phase Change Memory Cell with Optimized Heater Shape, and Manufacturing Method Thereof
Compositionally Modified Resistive Electrode
Contact Structure, Phase Change Memory Cell, and Manufacturing Method Thereof with Elimination of Double Contacts
Phase Change Memory Cell and Manufacturing Method Thereof Using Minitrenches
Carbon-Containing Interfacial Layer for Phase-Change Memory
Multi-Terminal Chalcogenide Switching Devices
Single Level Metal Memory Cell Using Chalcogenide Cladding
Method for Making Tapered Opening for Programmable Resistance Memory Element
Programming a Phase-Change Material Memory
Field Effect Chalcogenide Devices
Method of Eliminating Drift in Phase-Change Memory
Programmable Resistance Memory Element with Titanium Rich Adhesion Layer
Die Customization Using Programmable Resistance Memory Elements
Method to Enhance Performance of Thermal Resistor Device
Read/Write Circuit for Accessing Chalcogenide Non-Volatile Memory Cells
Damascene Conductive Line for Contacting an Underlying Memory Element
Damascene Phase Change Memory
Phase Change Access Device for Memories
Optically Accessible Phase Change Memory
Analog Phase Change Memory
Method of Making Programmable Resistance Memory Element
Lower Electrode Isolation in a Double-Wide Trench and Method of Making Same
Programmable Resistance Memory Element with Indirect Heating
Multiple Bit Chalcogenide Storage Device
Method to Selectively Increase the Top Resistance of the Lower Programming Electrode in a Phase-Change Memory Cell and Structures Obtained Thereby
Process for Manufacturing an Array of Cells Including Selection Bipolar Junction Transistors
Array of Cells Including a Selection Bipolar Transistor and Fabrication Method Thereof
Programmable Resistance Memory Element with Threshold Switching Material
Circuit and Method for Temperature Tracing of Devices Including an Element of Chalcogenic Material, in Particular Phase Change Memory Devices
Methods of Factoring and Modular Arithmetic
Method for Forming Pore Structure for Programmable Device
Phase-Change Memory Element and Method of Storing Data Therein
Sublithographic Contact Structure, in Particular for a Phase Change Memory Cell, and Fabrication Process Thereof
Process for Manufacturing a Memory Device, in Particular a Phase Change Memory, Including a Silicidation Step
Multi-Terminal Device Having Logic Functional
Secured Phase-Change Devices
Phase Change Memory Device
Electrically Programmable Memory Element with Improved Contacts
Method for Making Programmable Resistance Memory Element
Circuit for Accessing a Chalcogenide Memory Array
Method for Manufacturing Sidewall Contacts for a Chalcogenide Memory Device
Process for Defining a Chalcogenide Material Layer, in Particular in a Process for Manufacturing Phase Change Memory Cells
Single Level Metal Memory Cell Using Chalcogenide Cladding
Elevated Pore Phase-Change Memory
Forming Tapered Lower Electrode Phase-Change Memories
Electrically Programmable Memory Element with Improved Contacts
Process for Forming a Thin Film of Tisin, in Particular for Phase Change Memory Devices
Modified Contact for Programmable Devices
Programmable Resistance Memory Element with Multi-Regioned Contact
Programmable Resistance Memory Element
Using a Phase Change Memory as a High Volume Memory
Phase Change Memory with Ovonic Threshold Switch
Biasing Circuit for Use in a Non-Volatile Memory Device
Method of Operating a Programmable Resistance Memory Array
Pore Structure for Programmable Device
Methods of Accelerated Life Testing of Programmable Resistance Memory Elements
Increasing Adherence of Dielectrics to Phase Change Materials
Content Addressable Memory Cell
Electrically Programmable Memory Element
Programmable Matrix Array with Phase-Change Material
Forming Phase Change Memories
Process for Forming Tapered Trenches in a Dielectric Material
Fast Reading, Low Consumption Memory Device and Reading Method Thereof
Phase Change Memory That Switches Between Crystalline Phases
Phase Change Memory Cell and Manufacturing Method Thereof Using Minitrenches
Error Reduction Circuit for Chalcogenide Devices
Detecting Switching of Access Elements of Phase Change Memory Cells
Reading a Phase Change Memory
Using Higher Current to Read a Triggered Phase Change Memory
Using a Bit Specific Reference Level to Read a Resistive Memory
Reading Phase Change Memories
Circuitry for Reading Phase Change Memory Cells Having a Clamping Circuit
Forming Tapered Lower Electrode Phase-Change Memories
Reading Phase Change Memories Without Triggering Reset Cell Threshold Devices
Multilevel Phase Change Memory
Multi-Level Phase Change Memory
Manufacturing Method of a Contact Structure and Phase Change Memory Cell with Elimination of Double Contacts
Static Random Access Memory Cell Using Chalcogenide
Programmable Matrix Array with Chalcogenide Material
Electrically Programmable Memory Element with Reduced Area of Contact
Read/Write Circuit for Accessing Chalcogenide Non-Volatile Memory Cells
Die Customization Using Programmable Resistance Memory Elements
Sublithographic Contact Structure, Phase Change Memory Cell with Optimized Heater Shape, and Manufacturing Method Thereof
Forming a Phase Change Memory with an Ovonic Threshold Switch
Process for Manufacturing an Array of Cells Including Selection Bipolar Junction Transistors
Vertical Elevated Pore Phase Change Memory
Phase Change Memory with Threshold Switch Select Device
Reducing Leakage Currents in Memories with Phase-Change Material
Chalcogenide Devices and Materials Having Reduced Germanium or Telluruim Content
Programmable Matrix Array with Chalcogenide Material
Programmable Resistance Memory Element with Threshold Switching Material
Multiple Bit Chalcogenide Storage Device
Phase Change Memory Latch
Method of Writing to a Phase Change Memory Device
Page Mode Access for Non-Volatile Memory Arrays
Memory Element with Improved Contacts
Programming a Normally Single Phase Chalcogenide Material for Use as a Memory or Fpla
Multi-Functional Chalcogenide Electronic Devices Having Gain
Multi-Functional Chalcogenide Electronic Devices Having Gain
Nitrogenated Carbon Electrode for Chalcogenide Device and Method of Making Same
Method of Operating a Multi-Terminal Electronic Device
Multi-Layer Chalcogenide Devices
Sublithographic Contact Structure, in Particular for a Phase Change Memory Cell, and Fabrication Process Thereof
Memory Device and Method of Making Same
Chalcogenide Switch with Laser Recrystallized Diode Isolation Device and Use Thereof in Three Dimensional Memory Arrays
Three-Dimensional Phase-Change Memory
Method of Operating a Programmable Resistance Memory Array
Detecting Switching of Access Elements of Phase Change Memory Cells
Sequential and Video Access for Non-Volatile Memory Arrays
Array of Cells Including a Selection Bipolar Transistor and Fabrication Method Thereof
Memory Device and Method of Making Same
Damascene Phase Change Memory
Forming Phase Change Memories
Forming an Intermediate Electrode Between an Ovonic Threshold Switch and a Chalcogenide Memory Element
Multi-Terminal Chalcogenide Logic Circuits
A Method for Forming a Phase Change Device
Memory Device
Memory Device with Low Reset Current
Low Area Contact Phase-Change Memory
Composite Chalcogenide Materials and Devices
Liquid Phase Deposition of Contacts in Programmable Resistance and Switching Devices
Semiconductor Phase Change Memory Using Multiple Phase Change Layers
Chalcogenide Devices Exhibiting Stable Operation from the as-Fabricated State
Method and Apparatus for Chalcogenide Device Formation
Method of Restoring Variable Resistance Memory Device
Method and Apparatus for Reducing Programmed Volume of Phase Change Memory
Accessing a Phase Change Memory
Method to Manufacture a Phase Change Memory
Increasing Adherence of Dielectrics to Phase Change Materials
Active Material Devices with Containment Layer
Method and Apparatus for Accessing a Phase-Change Memory
Method and Apparatus for Driving an Electronic Load
Patent:
7,466,584 →
Application:
12/006,391 →
Memory Device
Planar Segmented Contact
Patent:
7,579,210 →
Application:
12/054,919 →
Programmable Resistance Memory Element and Method for Making Same
Programmable Matrix Array with Phase-Change Material
Method and Apparatus for Accessing a Bidirectional Memory
Method and Apparatus for Accessing a Multi-Mode Programmable Resistance Memory
Page Mode Access for Non-Volatile Memory Arrays
Temperature and Pressure Control Methods to Fill Features with Programmable Resistance and Switching Devices
Method and Apparatus for Accessing a Multi-Mode Programmable Resistance Memory
Self-Aligned Memory Cells and Method for Forming
Immunity of Phase Change Material to Disturb in the Amorphous Phase
Electrostatic Discharge Protection Circuit Including Ovonic Threshold Switches
Reducing Drift in Chalcogenide Devices
Phase Change Device with Offset Contact
Three-Dimensional Phase-Change Memory Array
Thin Film Logic Circuitry
Standalone Thin Film Memory
Thin Film Input/Output
Thin-Film Memory System Having Thin-Film Peripheral Circuit and Memory Controller for Interfacing with a Standalone Thin-Film Memory
Thin Film Logic Device and System
Asymmetric-Threshold Three-Terminal Switching Device
Memory Controller
Damascene Conductive Line for Contacting an Underlying Memory Element
Method of Programming Multi-Layer Chalcogenide Devices
Method and Apparatus for Decoding Memory
Programming a Normally Single Phase Chalcogenide Material for Use as a Memory of Fpla
Programmable Resistance Memory
Optical Ovonic Threshold Switch
Reading a Phase Change Memory
Chemical Vapor Deposition of Chalcogenide Materials via Alternating Layers
Programmable Matrix Array with Chalcogenide Material
Programmable Resistance Memory with Feedback Control
Programmable Resistance Memory
Programmable Resistance Memory
Nitrogenated Carbon Electrode for Chalcogenide Device and Method of Making Same
Multilevel Phase Change Memory
Reading Phase Change Memories
Reduction of Drift in Phase-Change Memory via Thermally-Managed Programming
Programmable Resistance Memory with Interface Circuitry for Providing Read Information to External Circuitry for Processing
Programmable Resistance Memory Array with Dedicated Test Cell
Forming an Intermediate Electrode Between an Ovonic Threshold Switch and a Chalcogenide Memory Element
Breakdown Layer via Lateral Diffusion
Circuitry for Reading Phase-Change Memory Cells Having a Clamping Circuit
Arsenic-Containing Variable Resistance Materials
Non-Volatile Single-Event Upset Tolerant Latch Circuit
Read Reference Circuit for a Sense Amplifier Within a Chalcogenide Memory Device
Analog Access Circuit for Validating Chalcogenide Memory Cells
Write Circuit for Providing Distinctive Write Currents to a Chalcogenide Memory Cell
Adjustable Write Pulse Generator Within a Chalcogenide Memory Device
Using a Phase Change Memory as a High Volume Memory
Method for Forming Chalcogenide Switch with Crystallized Thin Film Diode Isolation
Write-Once Memory Array Including Phase-Change Elements and Threshold Switch Isolation
Accessing a Phase Change Memory
Multilevel Variable Resistance Memory Cell Utilizing Crystalline Programming States
Programmable Resistance Memory
Application:
12/626,988 →
Publication:
US 2011/0128766
Programmable Matrix Array with Chalcogenide Material
Non-Volatile Memory Device Including Phase-Change Material
Page Mode Access for Non-Volatile Memory Arrays
Phase Change Memory with Ovonic Threshold Switch
Forming Phase Change Memory Cell With Microtrenches
Application:
12/756,392 →
Publication:
US 2010/0197120
Semiconductor Phase Change Memory Using Multiple Phase Change Layers
Variable Resistance Materials with Superior Data Retention Characteristics
Active Material Devices with Containment Layer
Nonvolatile Semiconductor Memory Device Having a Resistance Variable Layer and Manufacturing Method Thereof
Three-Dimensional Phase-Change Memory Array
Sector Array Addressing for Ecc Management
Self-Aligned Memory Cells and Method for Forming
Thin-Film Memory System Equipped with a Thin-Film Address Decoder and Memory Controller
Reading a Phase Change Memory
Programmable Resistance Memory Element
Multi-Level Phase Change Memory
Memory Device and Method of Making Same
Memory Device
Phase Change Memory That Switches Between Crystalline Phases
Reducing Drift in Chalcogenide Devices
Reading Phase Change Memories
Phase Change Device with Offset Contact
Programmable Resistance Memory
Phase Change Memory Cell and Manufacturing Method Thereof Using Minitrenches
Programmable Resistance Memory with Feedback Control
Immunity of Phase Change Material to Disturb in the Amorphous Phase
Method and Apparatus for Reducing Programmed Volume of Phase Change Memory
Programmable Resistance Memory
Method for Thin Film Memory
Reading a Phase Change Memory
Semiconductor Phast Change Memory Using Multiple Phase Change Layers
Using a Bit Specific Reference Level to Read a Memory
Forming a Phase Change Memory With an Ovonic Threshold Switch
Semiconductor Phase Change Memory Using Multiple Phase Change Layers
Method and Apparatus for Decoding Memory
Method and Apparatus for Decoding Memory
Method for Using a Bit Specific Reference Level to Read a Phase Change Memory
Shaping a Phase Change Layer in a Phase Change Memory Cell
Application:
13/558,423 →
Publication:
US 2012/0298946
Method for Reading Phase Change Memory Cells Having a Clamping Circuit
Forming Sublithographic Heaters for Phase Change Memories
Memory Device
Sector Array Addressing for Ecc Management
Semiconductor Phase Change Memory Using Face Center Cubic Crystalline Phase Change Material
Programmable Resistance Memory with Feedback Control
Immunity of Phase Change Material to Disturb in the Amorphous Phase
Phase Change Memory With Threshold Switch Select Device
Immunity of Phase Change Material to Disturb in the Amorphous Phase
Immunity of Phase Change Material to Disturb in the Amorphous Phase
Seasoning Phase Change Memories
Immunity of Phase Change Material to Disturb in the Amorphous Phase
Method and Apparatus for Decoding Memory
Method and Apparatus for Decoding Memory
Related Assignments
(4)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jul 3, 2015
From: CZUBATYJ, WOLODYMYR; OVSHINSKY, STANFORD R; STRAND, DAVID A; KLERSY, PATRICK
To: ENERGY CONVERSION DEVICES, INC
Reel/Frame 035976/0280 →
Assignment of Assignor's Interest
Dec 8, 2015
From: OVONYX, INC.
To: CARLOW INNOVATIONS LLC
Reel/Frame 037244/0954 →
Assignment of Assignor's Interest
Jan 8, 2026
From: MACGREGOR, ALASDAIR
To: ELIZABETH MACGREGOR NURSERY
Reel/Frame 073410/0280 →
Assignment of Assignor's Interest
Jan 8, 2026
From: MACGREGOR, ELIZABETH
To: ELIZABETH MACGREGOR NURSERY
Reel/Frame 073410/0380 →