A phase-change memory device includes a first insulator having a hole therethrough, a first electrode that conforms at least partially to the hole, a phase-change material in electrical communication with the first electrode, and a second electrode in electrical communication with the phase-change material. When current is passed from the first electrode to the second electrode through the phase-change material, at least one of the first and second electrodes remains unreactive with the phase change material.
1. A method of making a memory device comprising:
providing a first insulator;
configuring a hole through said first insulator;
providing a first conductive layer that conforms to the inner periphery of said hole;
configuring a portion of said first conductive layer to provide a first electrode, said first electrode being conformal to said periphery of said hole;
providing a phase-change material over said first insulator and in electrical communication with said first electrode, said phase-change material having a lower surface, said lower surface including a radially-inwardly facing surface portion and an arcuate-shaped, downwardly-facing portion;
providing a second insulator over said phase-change material and said hole;
removing a portion of said second insulator to expose a portion of said phase-change material, said exposed portion of said phase-change material being laterally displaced from said inner periphery of said hole; and
providing a second conductive layer over said exposed portion of said phase-change material, said second conductive layer being in electrical communication with said phase-change layer.
2. The method of claim 1 , further comprising:
providing a third insulator, said third insulator conforming to the portion of said first conductive layer that conforms to said periphery of said hole, said phase-change material being formed over said third insulator.
3. The method of claim 2 , further comprising:
recessing said third insulator to a depth below the top surface of said first insulator.
4. The method of claim 3 , wherein said phase-change material directly contacts said recessed portion of said third insulator.
5. The method of claim 1 , said further comprising:
providing and configuring a spacer within said hole to achieve a sublithographic opening through said first insulator.
6. The method of claim 1 , wherein said providing first conductive layer includes providing carbon.
7. The method of claim 6 , wherein said providing first conductive layer further comprises providing nitrogen.
8. The method of claim 1 , wherein said phase change material is provided in direct contact with said first electrode, said direct contact occurring at a contact region.
9. The method of claim 8 , wherein said first electrode includes an upper surface in direct contact with said lower surface of said phase change material at said contact region, said upper surface of said first electrode including an arcuate-shaped, upwardly-facing surface portion, said arcuate-shaped, upwardly-facing surface portion of said first electrode directly contacting said arcuate-shaped, downwardly-facing portion of said lower surface of said phase-change material.
10. The method of claim 9 , wherein said upper surface of said first electrode terminates at an outwardly-facing end surface, said outwardly-facing end surface directly contacting said phase change material.
11. The method of claim 1 , wherein said providing the second conductive layer includes:
arranging said second conductive layer over said second insulator, said second conductive layer including a first portion in direct contact with said second insulator, and
extending said second conductive layer along a thickness of said second insulator to form a second portion of said second conductive layer, said second portion of said second conductive layer directly contacting said exposed portion of said phase change material.