Vertical elevated pore phase change memory
View Patent ↗A vertical elevated pore structure for a phase change memory may include a pore with a lower electrode beneath the pore contacting the phase change material in the pore. The lower electrode may be made up of a higher resistivity lower electrode and a lower resistivity lower electrode underneath the higher resistivity lower electrode. As a result, more uniform heating of the phase change material may be achieved in some embodiments and better contact may be made in some cases.
1. A method comprising:
forming a lower electrode having a stack including a first layer and a second layer, said second layer having higher resistivity than said first layer, said first and second layers having aligned edges; and
forming a phase change material over said second layer.
2. The method of claim 1 including contacting said first layer with a conductor.
3. The method of claim 2 including forming an insulator over said lower electrode and forming a pore in said insulator.
4. The method of claim 3 including forming said phase change material in said pore in contact with said lower electrode.
5. The method of claim 4 including forming a lower electrode that is wider than said pore.
6. A method comprising:
forming a lower electrode having a first layer and a second layer, said second layer having higher resistivity than said first layer, said first layer being thinner than said second layer.
7. The method of claim 6 including contacting said first layer with a conductor.
8. The method of claim 6 including forming an insulator over said lower electrode and forming a pore in said insulator.
9. The method of claim 6 including forming a phase change material in a pore in contact with said lower electrode.
10. The method of claim 6 including forming a lower electrode that is wider than a pore.