Elevated pore phase-change memory
View Patent ↗An elevated phase-change memory cell facilitates manufacture of phase-change memories by physically separating the fabrication of the phase-change memory components from the rest of the semiconductor substrate. In one embodiment, a contact in the substrate may be electrically coupled to a cup-shaped conductor filled with an insulator. The conductor couples current up to the elevated pore while the insulator thermally and electrically isolates the pore.
1. A memory comprising:
a semiconductor structure;
a base contact formed on said semiconductor structure;
an insulating layer over said semiconductor structure;
a passage formed through said insulating layer, said passage including a tubular electrical connection to said base contact;
an insulator within said connection;
a cup-shaped heater electrically coupled to said connection; and
a phase-change material electrically coupled to said contact through said electrical connection and said heater.
2. The memory of claim 1 wherein said electrical connection is cup-shaped.
3. The memory of claim 1 including a sidewall spacer on said cup-shaped heater.
4. The memory of claim 3 wherein the phase-change material is formed over said sidewall spacer and in contact with said heater.
5. The memory of claim 1 wherein said heater is recessed below the upper surface of said insulating layer.
6. The memory of claim 5 including an upper electrode over said phase-change material.
7. A memory comprising:
a semiconductor structure;
a phase-change material spaced above said semiconductor structure;
a pair of stacked cup-shaped connectors electrically coupling said phase-change material to said semiconductor structure; and
an insulator between said cup-shaped connectors.
8. The memory of claim 7 including an insulating layer over said semiconductor structure.
9. The memory of claim 8 including a passage formed through said insulating layer.
10. The memory of claim 9 wherein said passage is lined with said stacked cup-shaped connectors.
11. The memory of claim 7 including a base electrode electrically coupled to said phase-change material and said connectors.
12. The memory of claim 7 including a sidewall spacer over one of said connectors and under said phase-change material.
13. The memory of claim 12 wherein said sidewall spacer is positioned within said passage and wherein said sidewall spacer is cylindrical.
14. The memory of claim 13 including an upper electrode over said phase-change material.