Programmable resistance memory element
View Patent ↗A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode, in a slot-like opening of a dielectric material. A method of making the opening.
1. A programmable resistance memory element, comprising:
a first dielectric material having an opening, said opening having a sidewall surface and a bottom surface;
a conductive layer formed over said sidewall surface;
a second dielectric material formed over said conductive layer within said opening;
a third dielectric material formed over an edge of said conductive layer, said third dielectric material having an opening formed therethrough, said opening having a lateral dimension less than 500 Angstroms; and
a programmable resistance material disposed in said opening, said programmable resistance material in electrical contact with said edge.
2. The memory element of claim 1 , wherein said opening is a trench.
3. The memory element of claim 1 , wherein said edge is annular.
4. The memory element of claim 1 , wherein said edge is linear.
5. The memory element of claim 1 , wherein said conductive layer is a sidewall layer.
6. The memory element of claim 1 , wherein said conductive layer is a sidewall spacer or liner.
7. The memory element of claim 1 , wherein said programmable resistance material is a phase-change material.
8. The memory element of claim 1 , wherein said programmable resistance material comprises a chalcogen element.
9. The memory element of claim 1 , wherein said conductive layer has a thickness of less than 500 Angstroms at said edge.
10. The memory element of claim 1 , wherein said conductive layer is disposed on said bottom surface of said opening.
11. The memory element of claim 1 , wherein said conductive layer is cup-shaped.
12. An electrically programmable memory element, comprising:
a substrate;
a cup-shaped conductive layer having an open end that faces away from said substrate;
a dielectric layer disposed over a top edge of said conductive layer, said dielectric layer having an opening, said opening having a lateral dimension less than 500 Angstroms; and
a programmable resistance material disposed in said opening, said programmable resistance material is electrical contact with said top edge.
13. The memory element of claim 12 , wherein said cup-shaped electrode has a thickness of less than 500 Angstroms at said top edge.
14. The memory element of claim 12 , wherein said opening is a trench.
15. The memory element of claim 12 , wherein said opening is a hole.
16. The memory element of claim 12 , wherein said memory material programmable resistance material is a phase-change material.
17. The memory element of claim 12 , wherein said memory material programmable resistance material comprises a chalcogen element.
18. The memory element of claim 12 , wherein said cup-shaped conductive layer has a cylindrical shape.