Reducing drift in chalcogenide devices
View Patent ↗Chalcogenide materials conventionally used in chalcogenide memory devices and ovonic threshold switches may exhibit a tendency called drift, wherein threshold voltage or resistance changes with time. By providing a compensating material which exhibits an opposing tendency, the drift may be compensated. The compensating material may be mixed into a chalcogenide, may be layered with chalcogenide, may be provided with a heater, or may be provided as part of an electrode in some embodiments. Both chalcogenide and non-chalcogenide compensating materials may be used.
1. An apparatus comprising:
a first material having a first variation of an electrical characteristic with time; and
a second material in electrical series with said first material, said second material having a second variation of said electrical characteristic with time, said second variation counteracting said first variation, and said second material mixed with said first material.
2. The apparatus of claim 1 , wherein said first material is a programmable resistance material or an electrical switching material.
3. The apparatus of claim 2 , wherein said second material is a conductive material.
4. The apparatus of claim 3 , wherein said second material is an electrode.
5. The apparatus of claim 2 , wherein said second material is a programmable resistance material or an electrical switching material.
6. The apparatus of claim 2 , wherein said first material comprises a chalcogen element.
7. The apparatus of claim 2 , wherein said first material comprises a phase change material.
8. The apparatus of claim 1 , wherein said electrical characteristic is resistivity or threshold voltage.
9. The apparatus of claim 1 , wherein said first material and said second material form separate layers.
10. The apparatus of claim 1 , wherein said second material is interspersed within said first material.
11. The apparatus of claim 1 , wherein said second material comprises an oxide.
12. The apparatus of claim 1 , wherein said first variation is spontaneous.
13. The apparatus of claim 1 , further comprising a barrier layer interposed between said first material and said second material.
14. The method of claim 13 , wherein said barrier layer comprises a conductive material.
15. The apparatus of claim 1 , further comprising a first electrode in electrical series with said first material and a second electrode in electrical series with said second material.
16. A method for forming the apparatus of claim 1 comprising:
combining said first material and said second material.
17. The method of claim 16 , wherein said second material is layered over said first material.
18. An apparatus comprising:
a first material having a first variation of an electrical characteristic with time;
a second material in electrical series with said first material, said second material having a second variation of said electrical characteristic with time, said second variation counteracting said first variation; and
a barrier layer interposed between said first material and said second material.
19. The apparatus of claim 18 , wherein said barrier layer comprises a conductive material.