Method of operating a multi-terminal electronic device
View Patent ↗A method of operating a multi-terminal electronic device. The device includes an active material in electrical communication with three or more electrical terminals. The active material is able to undergo a transformation from one state to another state, where the two states differ in resistance. The method includes the step of providing energy between one pair of terminals of the device, where the provided energy effects a change in the state of the active material adjacent to one or more other terminals of the device. In one embodiment, energy is applied between a first terminal and a second terminal of a three-terminal device and the state of the active material adjacent to the third terminal is altered. In one embodiment, energy is applied in the form of electrical energy and the active material is a phase change material that undergoes a transformation from one structural state to another structural state. The two structural states may include different volume fractions of a crystalline phase and an amorphous phase.
1. A method of operating an electronic device, said electronic device comprising an active material having a first state and a second state, said first and second states differing in resistance; a first terminal in contact with said active material; a second terminal in contact with said active material; a third terminal in contact with said active material; said active material extending continuously between said first terminal and said second terminal from said first terminal to said second terminal; said method comprising the step of:
providing energy between said first terminal and said second terminal;
wherein said providing energy step induces a transformation of said active material from said first state to said second state, said transformation occurring adjacent to said third terminal.
2. The method of claim 1 , wherein said active material is a phase change material.
3. The method of claim 1 , wherein said active material is a chalcogenide material.
4. The method of claim 3 , wherein said chalcogenide material comprises Se or Te.
5. The method of claim 4 , wherein said chalcogenide material further comprises Ge or Sb.
6. The method of claim 4 , wherein said chalcogenide material further comprises As or Si.
7. The method of claim 1 , wherein said first state is a crystalline state.
8. The method of claim 7 , wherein said second state is an amorphous state.
9. The method of claim 1 , wherein said first and second states comprise a crystalline phase and an amorphous phase and the volume fraction of said crystalline phase of said first state differs from the volume fraction of said crystalline phase of said second state.
10. The method of claim 1 , wherein the resistance of said first state and the resistance of said second state differ by a factor at least two.
11. The method of claim 1 , wherein the resistance of said first state and the resistance of said second state differ by a factor at least ten.
12. The method of claim 1 , wherein one of said terminals includes a barrier layer.
13. The method of claim 1 , wherein said third terminal is spaced apart from said first terminal and said second terminal.