Method for forming pore structure for programmable device
View Patent ↗In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, the quantity of programmable material is minimized, and the programmable material that is reprogrammed from an amorphous to a crystalline state, and vice versa, is localized on a contact. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact formed on a substrate. A spacer is formed within the opening and a programmable material is formed within the opening such that the spacer reduces the programmable material on the contact. A conductor is formed on the programmable material and the contact transmits to a signal line.
1. A method comprising:
forming a dielectric on a contact, the contact formed on a substrate;
forming an opening through the dielectric exposing the contact;
forming a programmable material within the opening, the programmable material on the contact and over the dielectric; and
forming a conductor on the programmable material on the contact and on the programmable material over the dielectric.
2. The method of claim 1 , wherein dimensions of the opening expose a first contact area of the contact, the method further comprising forming at least one spacer within the opening on the contact, the spacer exposing a second contact area of the contact having dimensions less than the first contact area, wherein the programmable material is on the second contact area of the contact.
3. The method of claim 1 , further comprising:
forming a barrier material between the programmable material and the conductor.
4. The method of claim 1 , wherein the contact transmits to a signal line, the method further comprising forming an isolation device between the contact and the signal line.
5. The method of claim 2 , wherein forming the at least one spacer comprises:
conformally forming at least one spacer on a surface of the dielectric and within the opening; and
anisotropically etching the at least one spacer from the surface of the dielectric.
6. The method of claim 5 , wherein the anisotropically etching comprises anisotropically etching with an agent that is selective for the spacer.