Programmable resistance memory element with threshold switching material
View Patent ↗A programmable resistance memory element comprising a dielectric material between a programmable resistance memory material and a threshold switching material.
1. An electrically programmable memory comprising:
a programmable resistance material;
a threshold switching material comprising a chalcogen element; and
a first layer of a dielectric material between said programmable resistance material and said threshold switching material, said dielectric material including silicon nitride.
2. The memory of claim 1 , further comprising a second layer of a dielectric material, said threshold switching material being between said first layer and said second layer.
3. The memory of claim 2 , further comprising a third layer of a dielectric material, said programmable resistance material being between said third layer and said first layer.
4. The memory of claim 1 , further comprising a second layer of a dielectric material, said programmable resistance material being between said first layer and said second layer.
5. The memory of claim 1 , wherein said programmable resistance material is a phase-change material.
6. The memory of claim 1 , wherein said programmable resistance material comprises a chalcogen element.
7. The memory of claim 1 , wherein said first layer has a thickness of less than 100 Angstroms.