Forming an intermediate electrode between an ovonic threshold switch and a chalcogenide memory element
View Patent ↗An intermediate electrode between an ovonic threshold switch and a memory element may be formed in the same pore with the memory element. This may have many advantages including, in some embodiments, reducing leakage.
1. A method comprising:
forming a chalcogenide memory element in a pore;
forming an ovonic threshold switch over said pore; and
forming an intermediate electrode in said pore between said ovonic threshold switch and said memory element wherein forming an ovonic threshold switch includes depositing a second chalcogenide over the intermediate electrode.
2. The method of claim 1 including depositing chalcogenide in said pore and planarizing said chalcogenide.
3. The method of claim 2 including removing some of said chalcogenide from said pore to form a recess over said memory element.
4. The method of claim 3 including depositing an electrode material in said recess.
5. The method of claim 4 including planarizing said electrode material to form said intermediate electrode.
6. The method of claim 1 including depositing a top electrode over said second chalcogenide.
7. The method of claim 6 including masking said top electrode and using said mask to etch both the top electrode and said second chalcogenide.
8. The method of claim 1 wherein forming an intermediate electrode includes forming the intermediate electrode entirely with said pore.
9. The method of claim 8 including forming said pore through dielectric material.